 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TPDV 640 ---> 1240 ALTERNISTORS .HI .I .HI FEATURES GH COMMUTATION : > 142 A/ms (400Hz) NSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB81734) GH VOLTAGE CAPABILITY : VDRM = 1200 V DESCRIPTION The TPDV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) Parameter A1 A2 G TOP 3 (Plastic) Value Tc = 75 C 40 Unit A ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 590 370 350 610 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case C C C Symbol Parameter 640 840 800 TPDV 1040 1000 1240 1200 Unit VDRM VRRM March 1995 Repetitive peak off-state voltage Tj = 125 C 600 V 1/5 TPDV 640 ---> 1240 THERMAL RESISTANCES Symbol Rth (j-a) Contact to ambient Parameter Value 50 1.2 0.9 Unit C/W C/W C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 s) IGM = 8A (tp = 20 s) VGM = 16V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt VD=12V VD=12V Test Conditions (DC) RL=33 (DC) RL=33 Tj=25C Tj=25C Tj=125C Tj=25C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP Value 200 1.5 0.2 2.5 Unit mA V V s mA VD=VDRM RL=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT IL Tj=25C I-III II TYP 100 200 IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM = 60A tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C TYP MAX MAX MAX MIN 50 1.8 0.02 8 500 mA V mA Linear slope up to VD=67%VDRM gate open (dV/dt)c = 200V/s (dV/dt)c = 10V/s V/s (dI/dt)c * Tj=125C MIN 35 142 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TPDV 640 ---> 1240 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp (s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E+3 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 TPDV 640 ---> 1240 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Safe operating area. 4/5 TPDV 640 ---> 1240 PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A R 4.6 I J H DIMENSIONS Millimeters Min. Max. 15.50 21.10 15.60 16.50 4.60 4.17 1.55 0.70 2.90 5.65 1.40 Inches Min. 0.594 0.814 0.561 0.632 0.133 0.173 0.161 0.057 0.019 0.106 0.212 0.047 Max. 0.611 0.831 0.615 0.650 0.182 0.164 0.062 0.028 0.115 0.223 0.056 A B G B D 15.10 20.70 14.30 16.10 3.40 4.40 4.08 1.45 0.50 2.70 5.40 1.20 C D G H I J P L M C L M N P N N Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.N. Maximum torqur value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
Price & Availability of TPDV1040
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |