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| VTP Process Photodiodes VTP4085, 4085S PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP4085 SYMBOL ISC TC ISC ISC VOC TC VOC ID RSH TC RSH CJ range p SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Short Circuit Current Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 2850 K 100 W/cm2, 940 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 100 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 V 400 925 .55 2.0 -11 .35 1100 400 925 .55 11.4 Typ. 200 .20 15 .33 -2.0 100 11.4 Max. Min. Typ. 200 .20 15 .33 -2.0 15 4.0 -11 .35 1100 50 Max. A %/C A mV mV/C nA M %/C nF nm nm A/W VTP4085S UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 55 |
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