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| NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 MARCH 94 FEATURES * High voltage * Low current ZTX341 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB Ptot Tj:Tstg E-Line TO92 Compatible VALUE 100 100 5 100 20 300 -55 to +175 UNIT V V V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collecor-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICER VCE(sat) VBE(sat) hFE fT Cobo 30 80 10 MHz pF MIN. 100 100 5 0.5 0.5 10 0.5 1.0 MAX. UNIT V V V A A A CONDITIONS. IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=80V, IE=0 VCE=80V, RBE=50K VCE=80V, RBE=50K IC=2mA, IB=0.1mA IC=2mA, IB=0.1mA IC=2mA, VCE=1V IC=5mA, VCE=5V f=60MHz VCB=6V, f=1MHz V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Tamb=100C 3-164 ZTX341 TYPICAL CHARACTERISTICS 0.16 0.14 IC/IB=10 140 120 hFE - Gain (%) 100A 1mA 10mA 100mA VCE(sat) - Volts 0.12 0.10 0.08 0.06 0.04 0.02 10A 100 80 60 40 20 0 10A 100A 1mA 10mA 100mA IC IC VCE(sat) v IC hFE v IC 3-165 |
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