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| DCR1576SY DCR1576SY Phase Control Thyristor Advance Information Replaces January 2000 version, DS4355-4.0 DS4355-5.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 5200V 2162A 40000A 1000V/s 300A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control *Higher dV/dt selections available VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V Conditions 5200 DCR1576SY52 5000 DCR1576SY50 4800 DCR1576SY48 4600 DCR1576SY46 4400 DCR1576SY44 4200 DCR1576SY42 Lower voltage grades available. Tvj = 0 to 125C, IDRM = IRRM = 500mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Outline type code: Y See Package Details for further information. (The DCR1576 is also available in a thin package, type code V. Please contact Customer Services for more information). ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1575SY36 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. Fig. 1 Package outline 1/9 www.dynexsemi.com DCR1576SY CURRENT RATINGS Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2162 3396 3200 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1440 2261 1984 A A A CURRENT RATINGS Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1720 2700 2500 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1120 1760 1510 A A A 2/9 www.dynexsemi.com DCR1576SY SURGE RATINGS Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 32.0 5.12 x 106 40.0 8.0 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 50.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 45.0 125 150 55.0 o Min. dc Anode dc - Max. 0.0095 0.019 0.019 0.002 0.004 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/9 www.dynexsemi.com DCR1576SY DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 2x IT(AV) Gate source 20V, 20 tr < 0.5s. At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 Rise time 0.5s, Tj = 25oC Tj = 25oC, VD = 5V Tj = 25oC, Rg - k = Repetitive 50Hz Non-repetitive Typ. 550 150 Max. 300 1000 150 300 1.05 0.34 2.5 1000 300 Units mA V/s A/s A/s V m s mA mA dI/dt Rate of rise of on-state current VT(TO) rT tgd IL IH tq Threshold voltage On-state slope resistance Delay time Latching current Holding current Turn-off time IT = 800A, tp = 1ms, Tj = 125C, VRM = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear 1.0 - ms GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, fig.4 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.0 300 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W 4/9 www.dynexsemi.com DCR1576SY CURVES 8000 Measured under pulse conditions Tj = 125C 6 phase 5000 3 phase Halfwave d.c. Min. Instantaneous on-state current, IT - (A) Max. 4000 6000 Mean power dissipation - (W) 3000 4000 2000 2000 1000 0 0.0 1.0 2.0 3.0 4.0 0 0 Instantaneous on-state voltage, VT - (V) 1000 2000 Mean on-state current, IT(AV) - (A) 3000 Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT A = 0.6963535 B = 0.1224886 C = 3.3104885 x 10-4 D = 1.619778 x 10-4 these values are valid for Tj = 125C for IT 500A to 7200A Where Fig.3 Dissipation curves 5/9 www.dynexsemi.com DCR1576SY 100000 1000 Conditions: Tj = 125C, VR = 1600V, IT = 2000A Snubber 1F, 11 Ohms 100 Table gives pulse power PGM in Watts Pulse Width s 100 200 500 1ms 10ms Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 400 150 125 100 25 - Stored charge, QS - (C) 10000 Min. IRR Max. QS Gate trigger voltage, VGT - (V) Max. IRR 100 Reverse recovery current, IRR - (A) 10 Min. QS 2W Tj = 125C 50W 20W 10W 5W 1000 IT QS tp = 2ms dI/dt 10 1 Up pe im rL it 9 9% Tj = -40C Tj = 25C % Lo rL we imi t1 100 0.1 1 1.0 100 10 Rate of decay of on-state current, dI/dt - (A/s) IRM 0.1 0.001 0.01 0.1 1.0 Gate trigger current, IGT - (A) 10 Fig.4 Stored charge Fig.5 Gate characteristics 0.1 0.1000 Single side cooled Single side cooled Thermal impedance, Rth(j-c) - C/W 0.01 Double side cooled Thermal impedance Rth(j-hs) - (C/W) 0.0100 Double side cooled 0.001 Conduction Effective thermal resistance Junction to case - C/W Double sided Single sided 0.019 0.020 0.0207 0.0234 0.0010 Conduction Effective Thermal Resistance Junction to heatsink - C/W Double Sided d.c. Halfwave 3 phase 120 6 phase 60 0.0115 0.0125 0.0132 0.0159 Single Sided 0.0230 0.0240 0.0247 0.0274 d.c. half wave 3 phase 120 6 phase 60 0.0095 0.0105 0.0112 0.0139 0.0001 0.001 0.01 0.1 1.0 Time - (s) 10 100 0.0001 0.001 0.01 0.1 1.0 Time - (s) 10 100 Fig.6 Transient thermal impedance - junction to case Fig.7 Transient thermal impedance - junction to heatsink 6/9 www.dynexsemi.com DCR1576SY 100 6.0 Peak half sinewave on-state current - (kA) 75 5.0 I2t value for fusing - (A2s x 106) 50 4.0 I2t 25 3.0 0 1 ms 10 1 5 10 2.0 50 Cycles at 50Hz Duration Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C) 7/9 www.dynexsemi.com DCR1576SY PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6 x 2.0 deep (One in each electrode) Cathode tab Cathode O112.5 max O73 nom O1.5 Gate O73 nom 37.7 36.0 Anode Nominal weight: 1600g Clamping force: 43kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: Y (The DCR1576 is also available in a thin package, type code V. Please contact Customer Services for more information). 8/9 www.dynexsemi.com DCR1576SY POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4355-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com |
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