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| SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 C FZT758 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. MAX. VALUE -400 -400 -5 -1 -500 2 -55 to +150 UNIT CONDITIONS. UNIT V V V A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching times V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 140 2000 50 50 40 50 20 Typical Typical MHz pF ns ns -400 -400 -5 -100 -100 -100 -0.30 -0.25 -0.50 -0.9 -1.0 V V V nA nA nA V V V V V IC=-100A IC=-10mA* IE=-100A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* IC=-20mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-100mA, VCC=-100V IB1=10mA, IB2=-20mA * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 242 FZT758 TYPICAL CHARACTERISTICS IC/IB=10 1.6 1.4 IC/IB=20 IC/IB=50 1.4 Tamb=25C 1.6 -55C +25C +100C +175C IC/IB=10 - (Volts) 1.2 1.0 0.8 0.6 - (Volts) V 0.01 0.1 1 10 20 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 V 0.4 0.2 0 0.001 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 1.6 300 1.4 -55C +25C +100C +175C IC/IB=10 - Normalised Gain - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 100 h 0.01 0.1 1 10 20 I+ - Collector Current (Amps) h I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C VCE=10V 1 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0.1 DC 1s 100ms 10ms 1ms 100s 0.01 V 0 0.001 0.01 0.1 1 10 20 0.001 1V 10V 100V 1000V I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 243 |
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