 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A FZT795A C E C B VALUE -140 -140 -5 -1 -500 2 -55 to +150 UNIT V V V A mA W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25C) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 300 250 100 100 225 15 100 1900 -0.75 800 -140 -140 -5 -0.1 -0.1 -0.3 -0.3 -0.25 -0.95 V V V A A IC=-100A IC=-10mA* IE=-100A VCB=-100V VEB=-4V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-2V* IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* V V V V V MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 253 FZT795A TYPICAL CHARACTERISTICS 1.8 IC/IB=40 1.6 1.4 IC/IB=20 IC/IB=10 1.4 Tamb=25C 1.6 1.8 -55C +25C +100C +175C IC/IB=40 - (Volts) - (Volts) V 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 V 0.4 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100C +25C -55C VCE=2V 1.6 750 1.4 -55C +25C +100C +175C IC/IB=10 - Typical Gain - Normalised Gain 1.2 1.0 0.8 0.6 0.4 0.2 - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 500 250 h 0 0.01 0.1 1 10 h 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C VCE=2V 1 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 0.1 DC 1s 100ms 10ms 1ms 100s V 0.01 0.001 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 254 |
Price & Availability of FZT795A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |