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Datasheet File OCR Text: |
NTE784 Integrated Circuit Wide-Band Power Amplifier Description: The NTE784 is a multistage, multipurpose, wide-band power amplifier on a single monolithic silicon chip. This device employs a highly versitile and stable direct-coupled circuit configuration featuring wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety of applications in military, industrial, and commercial equipment. The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum power output of 1W from a 12V DC supply with a typical power gain of 75dB. Features: D High Power Output D Wide Frequency Range D High Power Gain D Single Power Supply for Class B Operation with Transformer D Built-In Temperature Tracking Voltage Regulator Provides Stable Operation Applications: D AF Power Amplifiers for Portable and Fixed Sound and Communications Systems D Servo-Control Amplifier D Wide-Band Linear Mixers D Video Power Amplifiers D Transmission-Line Driver Amplifier (Balanced and Unbalanced) D Fan-In and Fan-Out Amplifiers for Computer Logic Circuits D Lamp-Control Amplifiers D Motor-Control Amplifiers D Power Multivibrators D Power Switches Absolute Maximum Ratings: Power Dissipation (Without Heatsink, TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/C Power Dissipation (With Heatsink, TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Emitter Breakdown Voltage Symbol V(BR)CER V(BR)CEO Idle Currents Peak Output Currents Cutoff Currents Differential Amplifier Current Drain Total Current Drain Differential Amplifier Input Pin Voltages Regulator Pin Voltage Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Base Cutoff Current Forward Current Transfer Ratio Bandwidth Maximum Power Output I4, I7 I4, I7 I4, I7 ICC1 ICC1 + ICC2 V2, V3 V11 ICEO IEBO ICBO hFE1 BW PO(max) Test Conditions (Q6 & Q7) IC = 10mA (Q1) IC = 0.1mA (Q6 & Q7) VCC1 =9V, VCC2 = 2V (Q6 & Q7) VCC1 =9V, VCC2 = 2V (Q6 & Q7) VCC1 =9V, VCC2 = 2V VCC1 = 9V, VCC2 = 9V VCC1 = 9V, VCC2 = 9V VCC1 = 9V, VCC2 = 2V VCC1 = 9V, VCC2 = 2V (Q) VCC1 = 10V (Q) VCC1 = 3V (Q) VCC1 = 3V (Q1) IC = 3mA, VCC1 = 6V VCC1 = 6V, VCC2 = 6V, -3dB VCC1 = 6V, VCC2 = 6V, RCC = 130 VCC1 = 9V, VCC2 = 9V, RCC = 130 VCC1 = 9V, VCC2 = 12V, RCC = 200 Sensitivity Input Resistance eIN RIN3 VCC1 = 9V, VCC2 = 12V, POUT = 800mW, RCC = 200 VCC1 = 6V, VCC2 = 6V, Pin3 to GND Min 25 10 - 180 - 6.3 14.5 - - - - - 30 - 200 400 800 - - Typ - - 5.5 - - 9.4 21.5 11.1 2.35 - - - 75 8 300 550 1000 50 1000 Max - - - - 1.0 12.5 30.0 - - 100 0.1 0.1 - - - - - 100 - MHz mW mW mW mV Unit V V mA mA mA mA mA V V A A A Pin Connection Diagram (Top View) Optional Bias Short to VCC 8 VCC 9 Buffer Amp Input 10 2.1V Bias Point 11 GND 12 1 6 Collector Output Q2 7 6 Emitter Output Q2 5 Emitter Output Q1 4 Collector Output Q 1 Buffer Amp Output 3 Differential Amp Input "A" 1 2 Differential Amp Input "B" .370 (9.4) Dia Max .335 (8.5) Dia Max .180 (4.57) Max .500 (12.7) Min .018 (0.48) Dia Typ .245 (6.23) Dia 4 3 2 1 5 6 7 12 11 10 9 8 |
Price & Availability of NTE784
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