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| (R) ST1803DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s s NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NEW SERIES, ENHANCED PERFORMANCE INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING CREEPAGE DISTANCE PATH > 4 mm TO-220FH APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM RBE =20 Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST1803DFH THERMAL DATA R thj-case Thermal Resistance Junction-case Max 3.125 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V I E = 700 mA Tj = 125 o C 130 7 Min. Typ. Max. 1 2 400 Unit mA mA mA V V CE(sat) V BE(sat) h FE IC = 4 A IC = 4 A IC = 4 A IC = 1 A I C = 4.5 A I C = 4.5 A IF = 5 A IC = 4 A L B = 5 H f = 16 KHz I B = 0.8 A I B = 1.2 A I B = 0.8 A V CE = 5 V V CE = 1 V V CE = 5 V I Bon(END) = 0.8 A V BB = -2.5 V (see figure 1) 10 5 3 5 1.5 1.2 V V V 15 5 1.5 2.7 0.3 20 9 2 4 0.6 V s s VF ts tf Diode Forward Voltage INDUCTIVE LOAD Storage Time Fall Time Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 ST1803DFH Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 ST1803DFH Power losses Switching Time Inductive Load Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 4/6 ST1803DFH TO-220FH (Fully plastic High voltage) MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409 P011W 5/6 ST1803DFH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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