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| STP45NF3LL - STP45NF3LLFP STB45NF3LL N-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAK STripFET IITM POWER MOSFET TYPE STP45NF3LL STP45NF3LLFP STB45NF3LL s s s s s VDSS 30 V 30 V 30 V RDS(on) <0.018 <0.018 <0.018 ID 45 A 45 A 27 A 3 1 2 TYPICAL RDS(on) = 0.014 @4.5V OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 3 1 TO-220 3 1 2 D2PAK DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220FP INTERNAL SCHEMATIC DIAGRAM Value TO-220/D2PAK TO-220FP 30 30 16 45 32 180 70 0.46 241 -- 55 to 175 (1) Starting Tj= 25C, ID= 22.5A, VDD= 24V Unit VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Viso Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V V V 27 19 108 25 0.167 2500 A A A W W/C mJ V C 1/11 (q) Pulse width limited by safe operating area November 2002 STP45NF3LL - STB45NF3LL THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.14 62.5 300 TO-220FP 6 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10 V, ID = 22.5 A VGS = 4.5V, ID = 22.5 A Min. 1 0.014 0.016 0.018 0.020 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =15 V , ID = 22.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 20 800 250 60 Max. Unit S pF pF pF 2/11 STP45NF3LL - STB45NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 22.5A RG = 4.7 VGS = 4.5V (Resistive Load, see Fig. 3) VDD = 24V, ID = 45A, VGS = 5V Min. Typ. 17 100 12.5 4.6 5.2 17 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 15V, ID = 22.5A, RG = 4.7, VGS = 4.5V (Resistive Load, see Fig. 3) Min. Typ. 20 21 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 45A, VGS = 0 ISD = 45A, di/dt = 100A/s, VDD = 15V, Tj = 150C (see test circuit, Figure 5) 35 44 2.5 Test Conditions Min. Typ. Max. 45 180 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220/D2PAK Thermal Impedance for TO-220/D2PAK 3/11 STP45NF3LL - STB45NF3LL Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/11 STP45NF3LL - STB45NF3LL Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Tj 5/11 STP45NF3LL - STB45NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STP45NF3LL - STB45NF3LL TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/11 STP45NF3LL - STB45NF3LL TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D F G1 E H F2 123 L2 L4 8/11 G STP45NF3LL - STB45NF3LL D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 9/11 1 STP45NF3LL - STB45NF3LL D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 10/11 STP45NF3LL - STB45NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 11/11 |
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