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 TO-220F 8A Thyristor
TF821S, TF841S, TF861S
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=8A qGate trigger current: IGT=15mA max qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS)
13.0 min
External Dimensions
(Unit: mm)
3.30.2 16.90.3 8.40.2 4.00.2 10.00.2
4.20.2 C 0.5 2.8
3.90.2 0.80.2
a b
1.350.15 1.350.15 +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2
a. Part Number b. Lot Number
qUL approved type available
2.54 2.20.2
2.54
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO
Ratings
TF821S 200 200 300 300 TF841S 400 400 500 500 8.0 12.6 120 2.0 10 5.0 5.0 0.5 - 40 to +125 - 40 to +125 1500 TF861S 600 600 700 700
Unit
V V V V A A A A V V W W C C V
Conditions
Tj= -40 to +125C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=87C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 2.0 2.0 1.4 1.5 5.0 0.1 4.0 50 30 3.6 15
Unit
mA mA V V mA V mA V/S S C/W
Conditions
Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=15A VD=6V, RL=10, TC=25C VD=1/2 x VDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case
16
TF821S, TF841S, TF861S
vT - iT Characteristics (max)
100 50
ITSM Ratings
140
Initial junction temperature Tj=125C
I TSM
Gate Characteristics
Gate trigger voltage VGT (V)
14 12
Surge on-state current ITSM (A)
120
10 ms 1 cycle
1
iT (A)
vGF (V)
Tj =125C
10
100 80
10 8 6 4 2 0 0 1
P
G M
0
On-state current
0
10
Tj=25C
20
Tj= -20C
30
50Hz
Tj = 25C
5
Gate voltage
Gate trigger current IGT (mA)
=5
60 40 20 1 5 10 50 100
W
See graph at the upper right
2 3
1
0.8
1.0
2.0
3.0
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT(AV) - PT(AV) Characteristics
20
IT(AV) - Tc Ratings
150
50Hz Half-cycle sinewave : Conduction angle
Average on-state power PT(AV) (W)
50Hz Half-cycle sinewave : Conduction angle 180
Case temperature TC (C)
0
12
18
0
16
DC
125
0
180
0
12
30 60 90
100 75 =30 90 120 180 60 DC
8
=
50
4
25 0 0 5 10 15
0
0
5
10
15
Average on-state current IT(AV) (A)
Average on-state current IT(AV) (A)
Pulse trigger temperature Characteristics vgt (Typical)
2.0
Pulse trigger temperature Characteristics igt (Typical)
tw
trigger IGT DC gateat 25C current
IH temperature Characteristics
(Typical)
igt tw
100 (VD=30V, RGK=1k)
)
trigger VGT DC gateat 25C voltage
)
vgt
30
(
1.5
Tj =- 40C -20C
Tj =- 40C 5 -20C 25C
vgt ( Gate trigger voltage) at Ta and tw
1.0
25C 75C 125C
igt (Gate trigger current ) at Ta and tw
Holding current IH (mA)
10
50
(
1 0.5 75C 125C 0.2 0.5 1 10 100 1000
10
5 3 -40
0.5 0.5
1
10
100
1000
0
25
50
75
100
Pulse width
tw (s)
Pulse width
tw (s)
Junction temperature Tj (C)
VGT temperature Characteristics
(Typical)
1.0 (VD=6V, RL=10)
IGT temperature Characteristics
(Typical)
50 30 (VD=6V, RL=10)
Transient thermal resistance Characteristics (Junction to case)
10
0.8
Gate trigger current IGT (mA)
Gate trigger voltage VGT (V)
0.6
10
Transient thermal resistance
rth (C/W)
1
0.4
5 3
0.2
0 -40
0
25
50
75
100
125
1 - 40
0.1 1 10
0
25
50
75
100
125
10 2
10 3
10 4
Junction temperature Tj (C)
Junction temperature Tj (C)
t, Time (ms)
Tj= -40C
2
125
10 5
17


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