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| MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION COMMON COM 1 16 NC OUTPUT1 O1 2 INPUT1 IN1 3 15 O4 OUTPUT4 14 IN4 INPUT4 13 12 4 GND 5 INPUT2 IN2 6 GND 11 IN3 INPUT3 10 O3 OUTPUT3 9 NC FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Wide operating temperature range (Ta = -20 to +75C) OUTPUT2 O2 7 COMMON COM 8 16P4(P) Package type 16P2N-A(FP) NC : No connection APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification CIRCUIT DIAGRAM COM OUTPUT INPUT 340 FUNCTION The M54532P and M54532FP each have four circuits consisting of NPN Darlington transistors. They have resistance of 340 between input transistor bases and input pins. A clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin. The collector current is 1.5A maximum. Collector-emitter supply voltage is 50V maximum. The M54532FP is enclosed in a molded small flat package, enabling space-saving design. 5.5K 3K GND The four circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI VR IF Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +50 1.5 -0.5 ~ +10 50 1.5 1.25 1.92(P)/1.00(FP) -20 ~ +75 -55 ~ +125 Unit V A V V A W C C Aug. 1999 Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Pulse Width 10ms, Duty Cycle 5% Pulse Width 100ms, Duty Cycle 5% Ta = 25C, when mounted on board MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO Output voltage Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 0 Limits typ -- -- -- -- -- max 50 1.25 Unit V IC Duty Cycle P : no more than 4% FP : no more than 2% Duty Cycle P : no more than 18% FP : no more than 9% 0 0 3 0 A 0.7 6 0.4 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II IR VF hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A II = 2mA, IC = 1.25A II = 2mA, IC = 0.7A VI = 3V VR = 50V IF = 1.25A VCE = 4V, IC = 1A, Ta = 25C Limits min 50 -- -- -- -- -- 800 typ+ -- 1.3 1.1 5 -- 1.6 7000 max -- 2.2 1.7 8.5 100 2.3 -- Unit V V mA A V -- Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Clamping diode reverse current Clamping diode forward voltage DC amplification factor + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 10 500 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Measured device OPEN PG 50 CL OUTPUT VO TIMING DIAGRAM 50% 50% RL INPUT OUTPUT 50% 50% ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 3VP-P (2) Input-output conditions : RL = 8.3, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 2.0 M54532P II = 2mA Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) Collector current Ic (A) 1.5 1.5 1.0 M54532FP 1.0 Ta = 25C 0.5 0.5 Ta = 75C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54532P) 2.0 2.0 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54532P) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C Collector current Ic (A) 1.5 Collector current Ic (A) 1.5 1.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 1.0 0.5 0 0 20 40 60 80 100 0.5 80 100 0 0 20 40 60 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54532FP) 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Duty cycle (%) Duty-Cycle-Collector Characteristics (M54532FP) 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C Collector current Ic (A) 1.5 Collector current Ic (A) 1.5 1.0 0.5 0 20 40 60 80 100 1.0 0.5 0 20 40 60 80 100 0 0 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 105 7 5 DC Amplification Factor Collector Current Characteristics VCE = 4V Grounded Emitter Transfer Characteristics 1.6 VCE = 4V DC amplification factor hFE Collector current Ic (A) 3 2 Ta = 75C 1.2 104 7 5 3 2 Ta = 25C Ta = -20C 0.8 Ta = 75C Ta = 25C 103 7 5 3 2 0.4 Ta = -20C 102 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Collector current Ic (mA) 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Input Characteristics 25 2.0 Clamping Diode Characteristics 20 Forward bias current IF (A) Ta = 25C Input current II (mA) Ta = -20C 1.5 15 Ta = 75C 1.0 10 Ta = 25C 0.5 Ta = 75C Ta = -20C 5 0 0 2 4 6 8 10 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Aug. 1999 |
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