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| Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. 0.15 min. I Features * Low forward dynamic resistance rf * Less voltage dependence of diode capacitance CD * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 - 0.02 0.8 0.1 + 0.05 1.3 0.1 1.7 0.1 Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature Symbol VR IF Topr Tstg Rating 35 100 -25 to +85 -55 to +150 Unit V mA C C 0.7 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Note) * : Maximum ambient temperature during operation Marking Symbol: S I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 - 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25C 0.27 - 0.02 + 0.05 1 MA2S077 IF V F 120 Ta = 25C 100 50 100 Band Switching Diodes CD VR f = 1 MHz Ta = 25C 1 000 IR T a VR = 33 V Diode capacitance CD (pF) Forward current IF (mA) 80 10 5 3 2 1 0.5 0.3 0.2 0.1 60 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 30 20 100 10 40 1 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) rf IF 1.0 f = 100 MHz Ta = 25C 1.0 rf f IF = 2 mA Ta = 25C Forward dynamic resistance rf () 0.8 Forward dynamic resistance rf () 1 3 10 30 100 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 10 30 100 300 1 000 Forward current IF (mA) Frequency f (MHz) 2 |
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