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| (R) STBV42 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42 is designed for use in compact fluorescent lamp application. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 1 2 0.5 1 1 -65 to 150 150 Unit V V V A A A A W o o C C September 2001 1/5 STBV42 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 120 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 700 V V CE = 700 V V EB = 9 V I C = 1 mA L = 25mH I C = 0.25 A I C = 0.5 A I C = 0.75 A I C = 0.25 A I C = 0.5 A I C = 0.4 A I C = 0.8 A I C = 0.25 A I B1 = -I B2 = 50 mA I B = 0.05 A I B = 0.125 A I B = 0.25 A I B = 0.05 A I B = 0.125 A V CE = 5 V V CE = 5 V V clamp = 300 V L = 3 mH 10 5 0.3 400 T j = 125 o Min. Typ. Max. 1 5 1 Unit mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Fall Time 0.2 0.3 0.4 0.5 1 1.5 1 1.2 30 20 V V V V V V BE(sat) h FE tf s Pulsed: Pulse duration = 300s, duty cycle = 1.5 % Safe Operating Area Derating Curve 2/5 STBV42 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load 3/5 STBV42 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. inch TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 0.500 E 1.27 0.050 F 0.4 0.51 0.016 0.020 G 0.35 0.14 4/5 STBV42 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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