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| (R) STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code STBV45 STBV45-AP s s s Marking BV45 BV45 Package / Shipment TO-92 / Bulk TO-92 / Ammopack s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED TO-92 Bulk TO-92 Ammopack s APPLICATIONS: COMPACT FLUORESCENT LAMPS (CFLS) DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV series is designed for use in Compact Fluorescent Lamps. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 600 400 9 0.75 1.5 0.4 0.75 0.95 -65 to 150 150 Unit V V V A A A A W o o C C March 2003 1/7 STBV45 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 131.6 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 600 V V EB = 9 V I C = 1 mA 400 Min. Typ. Max. 250 1 Unit A mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Fall Time I C = 0.2 A I C = 0.3 A I C = 0.4 A I C = 0.2 A I C = 0.3 A I C = 0.2 A I C = 0.4 A I C = 0.2 A I B1 = -IB2 = 40 mA (see figure 1) I B = 40 mA I B = 75 mA I B = 135 mA I B = 40 mA I B = 75 mA V CE = 5 V V CE = 5 V V clamp = 300 V L = 3 mH 10 5 0.2 0.3 0.4 0.5 1 1.5 1 1.2 30 20 V V V V V V BE(sat) h FE tf 0.3 s Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/7 STBV45 Safe Operating Area Derating Curve Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/7 STBV45 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 4/7 STBV45 TO-92 MECHANICAL DATA mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree DIM. 5/7 STBV45 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P mm TYP. inch TYP. MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 12.70 6.35 2.54 18.00 6.00 9.00 16.00 4.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 MIN. 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.728 0.610 0.150 0.500 0.250 0.100 0.709 0.236 0.354 0.630 0.157 MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 0.039 3.00 -1.00 0.118 -0.039 6/7 STBV45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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