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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 - APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL - SAA BSS123A S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS V DGR ID I DM V GS P tot T j :T stg VALUE 100 100 170 680 20 360 -55 to +150 UNIT V V mA mA V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) SYMBOL MIN. TYP. BV DSS V GS(th) I GSS I DSS R DS(on) g fs C iss C oss C rss 80 25 9 4 10 10 15 25 100 0.5 2.0 50 500 6 10 MAX. UNIT CONDITIONS. V V nA nA mS pF pF pF ns ns ns ns V DD 30V, I D=280mA V DS=25V, V GS=0V, f=1MHz I D=0.25mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0V V GS=10V, I D=170mA V GS=4.5V, I D=170mA V DS=25V, I D=100mA Turn-On Delay Time (2)(3) t d(on) Rise Time (2)(3) tr tf Turn-Off Delay Time (2)(3) t d(off) Fall Time (2)(3) (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator |
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