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| www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) Features * * * * * * * * * Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter TO-220F-4L 8-DIP Applications * SMPS for VCR, SVR, STB, DVD & DVCD * SMPS for Printer, Facsimile & Scanner * Adaptor for Camcorder 1 1. GND 2. Drain 3. VCC 4. FB 1.6.7.8 Drain 2. GND 3. VCC 4. FB 5. NC Internal Block Diagram #3 VCC 32V 5V Vref Good logic OSC 9V 5A 1mA - 2.5R 1R + 7.5V - + 27V - Thermal S/D OVER VOLTAGE S/D + S R L.E.B 0.1V S R Q Q Internal bias #2 DRAIN SFET (*#3 VCC) (*#1.6.7.8 DRAIN) #4 FB (*#4 FB) #1 GND Power on reset (*#2 GND) *Asterisk - KA5M0365RN, KA5L0365RN Rev.1.0.5 (c)2002 Fairchild Semiconductor Corporation KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Characteristic KA5H0365R, KA5M0365R, KA5L0365R Maximum Drain Voltage Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (1) Symbol VD,MAX VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG VD,MAX VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG Value 650 650 30 12.0 3.0 2.4 358 30 -0.3 to VSD 75 0.6 +160 -25 to +85 -55 to +150 800 800 30 12.0 3.0 2.1 95 30 -0.3 to VSD 75 0.6 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC mJ V V W W/C C C C V V V ADC ADC ADC mJ V V W W/C C C C Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5H0380R, KA5M0380R, KA5L0380R Maximum Drain Voltage Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. (2) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25C 3. L = 13H, starting Tj = 25C 2 KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Characteristic KA5M0365RN, KA5L0365RN Maximum Drain Voltage Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (1) Symbol VD,MAX VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG Value 650 650 30 12.0 0.42 0.28 127 30 -0.3 to VSD 1.56 0.0125 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC mJ V V W W/C C C C Continuous Drain Current (Ta=25C) Continuous Drain Current (Ta=100C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25C 3. L = 13H, starting Tj = 25C 3 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25C unless otherwise specified) Parameter KA5H0365R, KA5M0365R, KA5L0365R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: Pulse width 300S, duty 2% 2. 1 S = --R (Note) (Note) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) Min. 650 2.0 - Typ. 3.6 720 40 40 150 100 150 42 7.3 13.3 Max. 50 200 4.5 34 - Unit V A A S pF nS nC BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 800 1.5 - 4.0 2.5 779 75.6 24.9 40 95 150 60 7.2 12.1 250 1000 5.0 34 - V A A S pF nS nC 4 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25C unless otherwise specified) Parameter KA5M0365RN, KA5L0365RN Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: Pulse width 300S, duty 2% 2. 1 S = --R (Note) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) Min. 650 2.0 - Typ. 3.6 314.9 47 9 11.2 34 28.2 32 Max. 50 200 4.5 11.93 Unit V A A S pF nS - 1.95 6.85 - nC 5 KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25C unless otherwise specified) Characteristic UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Initial Accuracy FOSC FOSC KA5H0365R KA5H0380R KA5M0365R KA5M0365RN KA5M0380R KA5L0365R KA5L0365RN KA5L0380R -25CTa+85C KA5H0365R KA5H0380R KA5M0365R KA5M0365RN KA5M0380R KA5L0365R KA5L0365RN KA5L0380R Ta=25C, 0V Initial Accuracy Frequency Change With Temperature (2) Maximum Duty Cycle FOSC Dmax 45 62 50 5 67 55 10 72 kHz % % Maximum Duty Cycle Dmax 72 77 82 % FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Over Voltage Protection Thermal Shutdown Temperature (Tj) Start-up Current Operating Supply Current (Control Part Only) (1) (1)(2) IFB VSD Idelay Vref Vref/T IOVER VOVP TSD ISTART IOP 0.7 6.9 4 4.80 1.89 25 140 - 0.9 7.5 5 5.00 0.3 2.15 27 160 100 7 1.1 8.1 6 5.20 0.6 2.41 29 170 12 mA V A V mV/C A V C A mA CURRENT LIMIT(SELF-PROTECTION)SECTION TOTAL STANDBY CURRENT SECTION Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 6 KA5X03XX-SERIES Typical Performance Characteristics(SenseFET part) (KA5H0365R, KA5M0365R, KA5L0365R) 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V Top : ID, Drain Current [A] ID, Drain Current [A] 1 1 150 oC @ Notes: 1. 300 s Pulse Test 2. TC = 25 oC 25 oC -25oC @ Notes: 1. VDS = 30V 2. 300 s Pulse Test 0.1 0.1 1 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Transfer Characteristics 7 6 RDS(on) , [ ] Drain-Source On-Resistance 5 4 IDR, Reverse Drain Current [A] V gs=10V 1 V gs=20V 3 2 1 0 0.1 150oC 25oC @ Notes : 1. VG = 0V S 2. 300s PulseTest @ Note : Tj=25 0 1 2 3 4 5 0.01 0.4 0.6 0.8 1.0 1.2 ID,Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 700 600 VGS,Gate-Source Voltage[V] 500 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS =130V 8 VDS=320V VDS=520V 6 Capacitance [pF] 400 300 4 200 Coss 100 2 @Note : ID=3.0A Crss 0 100 101 0 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 7 KA5X03XX-SERIES Typical Performance Characteristics (Continued) 1.2 2.5 2.0 Drain-Source Breakdown Voltage 1.1 Drain-Source On-Resistance BVDSS, (Normalized) RDS(on), (Normalized) 1.5 1.0 1.0 @Notes: 1. VGS = 10V 2. ID = 1.5 A 0.9 @ Notes : 1. VGS = 0V 2. ID = 250A 0.5 0.8 0.0 -50 0 50 o 100 150 -50 0 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 2 10 ID , Drain Current [A] Oper ation i This Area n is L imited by R DS(on) 1 10 3.0 1 s 0 ID, Drain Current [A] 13 0 100 s 1 ms 10 m s DC 2.5 2.0 0 10 1.5 -1 10 @ No : tes 1. T = 2 oC 5 C 2. T = 1 oC 50 J 3. Single Pulse 1.0 0.5 -2 10 0 10 101 2 10 0.0 25 50 75 100 125 150 VDS , Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature 100 Thermal Response D=0.5 0.2 0.1 10-1 0.05 0.02 0.01 ZJ C(t) , @ Notes : 1. Z JC (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJM -TC =PDM *Z JC (t) single pulse 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , Square Wave Pulse Duration Figure 11. Thermal Response [sec] 8 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 101 VGS Top: 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 100 101 ID, Drain Current [A] ID, Drain Current [A] 100 150oC @ Notes: 1. 300 s Pulse Test 2. TC = 25oC 10-1 100 101 10-1 2 25oC -25oC @Notes: 1. VDS = 30 V 2. 300 s PulseTest 6 8 10 4 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Thansfer Characteristics 8 7 Fig3. On-Resistance vs. Drain Current 10 Drain-Source On-Resistance 6 5 4 3 2 1 0 Vgs=20V IDR, Reverse Drain Current [A] Vgs=10V RDS(on) , [ ] 1 150oC 25oC @Note : Tj=25 0 1 2 3 4 0.1 0.4 0.6 0.8 @Notes: 1. VGS = 0V 2. 300 s Pulse Test 1.0 ID,Drain Current VSD, Source-Drain Voltage [V] Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 1000 900 800 700 VGS,Gate-Source Voltage[V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 10 VDS=160V 8 VDS=400V VDS =640V 6 Capacitance [pF] 600 500 400 300 200 100 0 100 4 Coss Crss 101 2 @Note : ID=3.0A 0 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 9 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 1.2 2.5 Drain-Source Breakdown Voltage 2.0 1.1 Drain-Source On-Resistance BVDSS, (Normalized) RDS(on), (Normalized) 1.5 1.0 1.0 0.9 @ Notes : 1. VGS = 0V 2. ID = 250A 0.5 @ Notes: 1. VGS = 10V 2. ID = 1.5 A 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 T J, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 102 3.5 ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 101 100 s 1 ms 100 10 ms DC 10 s 3.0 2.5 ID, Drain Current [A] 103 2.0 1.5 1.0 0.5 0.0 10-1 @ Notes : 1. TC = 25 oC 2. TJ = 150 C 3. Single Pulse o 10 -2 101 102 40 60 80 100 120 140 VDS , Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature Thermal Response 100 D=0.5 0.2 0.1 10- 1 0.05 0.02 0.01 @ Notes : 1. Z J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) J C (t) , single pulse Z 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] Figure 11. Thermal Response 10 KA5X03XX-SERIES Typical Performance Characteristics(SenseFET part) (Continued) (KA5M0365RN, KA5L0365RN) 10 1 ID, Drain Current [A] 10 0 ID , Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 0 -55 10 25 10 -1 Note : 1. 250 s Pulse Test 2. TC = 25 Note 1. VDS = 50V 2. 250 s Pulse Test 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Transfer Characteristics 8.0 7.5 7.0 1 RDS(ON) [ ], Drain-Source On-Resistance 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 0 1 2 3 VGS = 10V VGS = 20V IDR , Reverse Drain Current [A] 10 10 0 150 25 Note : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 4 5 6 7 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance vs. Drain Current 700 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Source-Drain Diode Forward Voltage 12 VGS, Gate-Source Voltage [V] 600 10 VDS = 130V VDS = 325V 500 Ciss Coss Capacitances [pF] 8 VDS = 520V 400 6 300 Crss 200 Note ; 1. VGS = 0 V 2. f = 1 MHz 4 100 2 Note : ID = 3.0 A 10 -1 10 0 10 1 0 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 11 KA5X03XX-SERIES Typical Performance Characteristics (Continued) ( KA5M0365RN, KA5L0365RN) 1.15 BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.5 1.10 RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.05 1.5 1.00 0.95 Note : 1. VGS = 0 V 2. ID = 250 A 1.0 Note : 1. V GS = 10 V 2. ID = 1.5 A 0.90 -50 0 50 100 o 0.5 150 -50 0 50 100 o 150 TJ, Junction Temperature [ C] T J, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 0.5 10 1 Operation in This Area is Limited by R DS(on) 10 0 ID, Drain Current [A] ID, Drain Current [A] 10 -1 10 s 100 s 1 ms 10 ms 100 ms 1s 10 s DC 0.4 0.3 0.2 10 -2 0.1 10 -3 0.0 0 10 10 1 10 2 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [? ] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature D=0.5 Z? JC Thermal Response (t), 0.2 10 0.1 0.05 0.02 1 0.01 ? Notes : (t) 1. Z? JC = 80 ? /W Max. 2. Duty Factor, D=t1/t2 3. TJM - T C = P DM * Z? JC (t) single pulse 0.1 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration [sec] Figure 11. Thermal Response 12 KA5X03XX-SERIES Typical Performance Characteristics (Control Part) (Continued) (These characteristic graphs are normalized at Ta = 25C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Fig.2 Feedback Source Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Figure 1. Operating Frequency Figure 2. Feedback Source Current Fig.3 Operating Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Fig.4 Max Inductor Current IIpeak 1 over 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Figure 3. Operating Supply Current Figure 4. Peak Current Limit 1.5 1.3 Fig.5 Start up Current 1.15 1.1 1.05 Fig.6 Start Threshold Voltage Istart 1.1 0.9 0.7 0.5 -25 Vstart 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 5. Start up Current Figure 6. Start Threshold Voltage 13 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25C) Fig.7 Stop Threshold Voltage 1.15 1.1 1.05 1.15 1.1 1.05 Fig.8 Maximum Duty Cycle Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.10 Shutdown Feedback Voltage Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.12 Over Voltage Protection Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 14 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25C) Fig.13 Soft Start Voltage 1.15 1.1 1.05 2.5 2 1.5 ( Rdson)1 Fig.14 Drain Source Turn-on Resistance Vss 1 0.9 0.95 0.85 -25 0.5 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150 Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance 15 KA5X03XX-SERIES Package Dimensions TO-220F-4L 16 KA5X03XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) 17 KA5X03XX-SERIES Package Dimensions (Continued) 8-DIP 18 KA5X03XX-SERIES Ordering Information Product Number KA5H0365RTU KA5H0365RYDTU KA5M0365RTU KA5M0365RYDTU KA5L0365RTU KA5L0365RYDTU KA5M0365RN KA5L0365RN Product Number KA5H0380RTU KA5H0380RYDTU KA5M0380RTU KA5M0380RYDTU KA5L0380RTU KA5L0380RYDTU TU :Non Forming Type YDTU : Forming type Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) 8-DIP 8-DIP Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Marking Code 5H0365R 5M0365R 5L0365R 5M0365R 5L0365R Marking Code 5H0380R 5M0380R 5L0380R BVDSS 650V 650V 650V 650V 650V BVDSS 800V 800V 800V FOSC 100kHz 67kHz 50kHz 67kHz 50kHz FOSC 100kHz 67kHz 50kHz RDS(on) 3.6 3.6 3.6 3.6 3.6 RDS(on) 4.6 4.6 4.6 19 KA5X03XX-SERIES DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 12/12/02 0.0m 001 Stock#DSxxxxxxxx 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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