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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1716
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17.0 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19.0 m TYP. (VGS = -4.0 V, ID = -4 A) * Low Ciss : Ciss = 2100 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5
1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
1
4 5.37 Max.
+0.10 -0.05
6.0 0.3 4.4 0.8
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.8 Max.
1.44
0.05 Min.
0.5 0.2 0.10
1.27 0.78 Max. 0.40
+0.10 -0.05
PA1716G
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVARENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
-30
V V A A W C C
Gate Protection Diode Gate
# 20 #8 # 32
2.0 150 -55 to +150
Body Diode
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
Source
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.0 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G13727EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan
(c)
1998, 1999
PA1716
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -4.0 A VGS = -4.5 V, ID = -4.0 A VGS = -4.0 V, ID = -4.0 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -4.0 A VDS = -30 V, VGS = 0 V VGS = MIN. TYP. 12.5 17 19 MAX. 16 23 26 UNIT m m m V S
-1.0
7
-1.6
14
-2.5
-1
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
# 20 V, VDS = 0 V
2100 700 300 30 150 120 76 40 6 10 0.8 45 33
# 10
VDS = -10 V VGS = 0 V f = 1 MHz ID = -4.0 A VGS(on) = -10 V VDD = -15 V RG = 10 ID = -8.0 A VDD = -24 V VGS = -10 V IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100 A/ s
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA
10 % 90 % 90 % ID VGS (on) 90 %
RL VDD
PG.
RG RG = 10
0 ID
VDD
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
2
Data Sheet G13727EJ1V0DS00
PA1716
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60
Mounted on ceramic substrate of 1200mm 2 x 1.0mm
0
20
40
60
80
100 120 140 160
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse)
Remark Mounted on ceramic substrate of
1m s
ID - Drain Current - A
1200 mm x 1.0 mm
2
-10
ID(DC)
10
Po
m
10
we rD iss
s
0m
s
-1
ip
at
io
n
Li
m
TA = 25 C -0.1 Single Pulse -0.1 -1
ite
d
-10 -100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C
10
1
Mounted on ceramic substrate of 1200 mm2 x 1.0 mm Single Pulse
0.1 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G13727EJ1V0DS00
3
PA1716
FORWARD TRANSFER CHARACTERISTICS -100 Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulsed
ID - Drain Current - A
ID - Drain Current - A
-10
-1
TA = -25C 25C 75C 125C 150C
-40 VGS = -10 V -30 -20 -10 -4.5 V -4 V
-0.1 VDS = -10 V -3.0 -4.0
0
-1.0
-2.0
0
-0.2
-0.4
-0.6
-0.8
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
VDS = -10 V Pulsed
100
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
10
TA = -50C -25C 25C 75C 125C 150C
20 ID = -4 A 10
-0.1
-1
-10
-100
0
-5
-10
-15
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
25
Pulsed
-2.0
VDS = -10 V ID = -1 mA
20
VGS = -4 V
-4.5 V
-1.5
-1.0
15
-10 V
-0.5
0
-1
-10 ID - Drain Current - A
-100
0
-50
0
50
100
150
Tch - Channel Temperature - C
4
Data Sheet G13727EJ1V0DS00
PA1716
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 36 32 28 24 20 16 12 8 -50 0 50 100 ID = -4 A 150
0 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
IF - Diode Forward Current - A
VGS = -4 V
10 VGS = -4 V 1 -4.5 V 0V
-4.5 V
-10 V
0.1 0.5 1.0 1.5
Tch - Channel Temperature - C
VF - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz Ciss 1 000 Coss Crss 100
tr td(off) 100 tf td(on) 10 VDS = -15 V VGS = -10 V RG = 10 -10 -100
10 -0.1
-1
-10
1 -0.1
-1
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DIODE CURRENT
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
-30
100
VDS = -24 V -15 V -6 V
VGS
-12 -10
-20
-8 -6
10
-10 VDS 0 10 20 30 40 50 60 70
-4 -2 0
1 0.1
1
10
100
IF - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 ID = -8.0 A
Data Sheet G13727EJ1V0DS00
5
PA1716
[MEMO]
6
Data Sheet G13727EJ1V0DS00
PA1716
[MEMO]
Data Sheet G13727EJ1V0DS00
7
PA1716
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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