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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC2714T
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
FEATURES
* Low power consumption * High power gain * Input and output matching * Super small package : 15 mW (VCC = 3.4 V, ICC = 4.5 mA) TYP. : 11.5 dB TYP. @ f = 0.5 GHz : 50 : 6 pin mini mold
* Excellent frequency response : 1.8 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
ORDERING INFORMATION
PART NUMBER
PC2714T-E3
PACKAGE 6 pin mini mold
SUPPLYING FORM Embossed tape 12 mm wide. Pin 1, 2, 3 face to perforation side of the tape.
EQUIVALENT CIRCUIT
VCC OUT
(Top View)
PIN CONNECTIONS
(Bottom View)
IN
3 2 1
C1K
4 5 6 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC
4 5 6
3 2 1
GND
Caution: Electro-static sensitive devices
Document No. P12431EJ2V0DS00 (2nd edition) (Previous No. IC-2951) Date Published March 1997 N Printed in Japan
(c)
1993
PC2714T
ABSOLUTE MAXIMUM RATINGS (TA = +25 C)
Supply Voltage Total Circuit Current Power Dissipation Operating Temperature Storage Temperature Input Power * Mounted on 50 50 VCC ICC PD Topt Tstg Pin 4.1 7.5 280* 40 to +85 55 to +150 0 V mA mW C C dBm
1.6 mm epoxy glass PWB (TA = +85 C)
RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage SYMBOL VCC MIN. 3.06 TYP. 3.4 MAX. 3.74 UNIT V
ELECTRICAL CHARACTERISTICS (TA = +25 C, VCC = 3.4 V, ZS = ZL = 50
PARAMETER Circuit Current Power Gain Maximum Output Level Noise Figure Upper Limit Operating Frequency SYMBOL ICC GP PO(sat) NF fU 1.4 MIN. 3.3 8.5 -10 TYP. 4.5 11.5 -7 5.0 1.8 6.5 MAX. 5.7 15.5 UNIT mA dB dBm dB GHz
)
TEST CONDITIONS
No Signal f = 0.5 GHz f = 0.5 GHz, Pin = -10 dBm f = 0.5 GHz 3 dB down below flat gain f = 0.1 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 to 0.6 GHz
Isolation Input Return Loss Output Return Loss Gain Flatness
ISL RLin RLout
22 10 5
27 13 8 1.0
dB dB dB dB
GP
2
mPC2714T
TEST CIRCUIT
VCC 1 000 pF C3 6 50 IN 1 000 pF C1 1 4 C2 1 000 pF 50 OUT
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
VCC 1 000 pF C3 6 50 IN 1 000 pF C1 1 4 C4 1 000 pF C5 1 000 pF R1 50 to 200 2, 3, 5 To stabilize operation, please connect R1, C5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
1 000 pF C6 6 1 4 C2 1 000 pF 50 OUT
2, 3, 5
Capacitors for VCC, input and output pins 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin's ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 p fZs).]
3
mPC2714T
TYPICAL CHARACTERISTICS (TA = +25 C)
CIRCUIT CURRENT vs. OPERATING TEMPERATURE 10 VCC = 3.4 V
CIRCUIT CURRENT vs. SUPPLY VOLTAGE 10 9
ICC - Circuit Current - mA
ICC - Circuit Current - mA
1 2 3 4 5
8 7 6 5 4 3 2 1 0
8
6
4
2 -40
0
40
80
VCC - Supply Voltage - V NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 30 30
Topt - Operating Temperature - C
INSERTION POWER GAIN vs. FREQUENCY VCC = 3.4 V
GP - Insertion Power Gain - dB
20 VCC = 3.74 V VCC = 3.4 V GP 10 VCC = 3.06 V
GP - Insertion Power Gain - dB
20 TA = +25 C +85 C 10 -40 C -20 C
NF - Noise Figure - dB
9 7 5 3 1
0
NF VCC = 3.4 V
VCC = 3.74 V
VCC = 3.06 V 1.0 2.0
-10 0.1
0.3 f - Frequency - GHz
0 0.1
0.3 f - Frequency - GHz
1.0
2.0
ISOLATION vs. FREQUENCY -10 VCC = 3.4 V 0
INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY VCC = 3.4 V
RLin - Input Return Loss - dB RLout - Output Return Loss - dB
ISL - Isolation - dB
-10
RLout
-20
-20
RLin
-30
-30
-40 0.1
0.3 f - Frequency - GHz
1.0
2.0
-40 0.1
0.3 f - Frequency - GHz
1.0
2.0
4
mPC2714T
OUTPUT POWER vs. INPUT POWER 10 f = 0.5 GHz PO - Output Power - dBm PO - Output Power - dBm 0 3.74 V -10 VCC = 3.4 V -20 3.06 V -30 0 +85 C -10 Ta = +25 C -20 -20 C -40 C 10 VCC = 3.4 V f = 0.5 GHz OUTPUT POWER vs. INPUT POWER
-30
-40 -50
-40
-30
-20
-10
-40 -50
-40
-30
-20
-10
Pin - Input Power - dBm
Pin - Input Power - dBm
OUTPUT POWER vs. INPUT POWER 10 f = 1.0 GHz PO - Output Power - dBm PO - Output Power - dBm 0 VCC = 3.4 V 3.74 V 0 10
OUTPUT POWER vs. INPUT POWER VCC = 3.4 V
f = 0.5 GHz -10 f = 1.0 GHz -20
-10
-20 3.06 V -30
-30
-40 -50
-40
-30
-20
-10
-40 -50
-40
-30
-20
-10
Pin - Input Power - dBm SATURATED OUTPUT POWER vs. FREQUENCY 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 0.1 PO(sat) - Saturated Output Power - dBm Pin = -10 dBm
Pin - Input Power - dBm THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE -50 f1 = 0.500 GHz f2 = 0.502 GHz VCC = 3.4 V -40 3.74 V -30
3.74 V
IM3 - 3rd Order Intermodulation Distortion - dBc
VCC = 3.4 V
-20 3.06 V -10
3.06 V
0.2
0.5 f - Frequency - GHz
1
2
0 -30
-20
-10
PO(each) - Output Power of Each Tone - dBm
5
0.1
0.2
0.1
0.3
0.2
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 FLECTION COEFFCIENT 0.4 RE 0.0TOR 3 6 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 0.4 ES 0 160 4 - 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. -1 EA OM C
0.1 0.1
0.2
C
0. 4
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 FLECTION COEFFCIENT 0.4 RE 0.0TOR 3 6 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 0.4 ES 0 160 4 - 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. -1 EA OM C
0.3
0.
07 43 0. 0 13
-1
NE G
20
0.6
-
2 0.4 20 1 07 0. 3 4 0. 0 13
12 0
8 0.0 2 0.4 20 1
0.3 0.3
9 0.0 1 0.4
0.4 1 0.0 0.4 9 02 -1 .08 0 00 .43 0. 07 30
9 0.0 1 0.4
0
0.40 0.10
-11
0.40 0.10 -11 0
0.10 0.40 110
0.10 0.40 110
0.7
0.4 1 0.0 9
0.4 0.4
0.7
0.6
0.4 02 .08 0 00 .43 0. 07 30
0.6
NE G
0.
.08
5
E IV AT
(
-1
0
N
0. 5
5 0.
E NC TA AC - JX- - RE --ZO
E NC TA AC - JX- - RE --ZO
)
4
0.2
O
( -Z-+-J-XTANCE CO ) MPO
E IV AT
(
)
0.2
( -Z-+-J-XTANCE CO ) MPO
O
0.
4
0.39 0.11 -100
0.38 0.12
0.38 0.39 0.12 0.11 -100
-90
0.2
0.2
REACTANCE COMPONENT R ---- 0.2 ZO
-90
0.2
0.2
0.4
0.4
0.13 0.37
0.37 0.13
0.4
0.13 0.37
0.37 0.13
0.6
1.2
0.6
1.2
0.6
0.4
0.6
8
0.6
0.
0.8
0.8
1.2 1.2
0.
0.
0.
1.4
0.2
0.8
1.4
8
0
1.
8
0
1.
1.
0.36 0.04 -80
0.1 G
1.4
1.8 2.0
1.4
0.36 0.04 -80
0.15 0.35
0.35 0.15 -70
-70
1.0 G
0.5 G
1.6 1.6
1.6
0.35 0.15
0
0.1 6 0.3 4
4 0.3 6 0.1
0.1 6 0.3 4
4 0.3 6 0.1
-6
0.1 0.3 7 3
3 0.3 7 0.1
0.1 0.3 7 3
0
3 0.3 7 0.1
2.0
4.0 5.0
2.0
-6
1.8
1.8
0
0
-5
-5
32
0.
18
0.
32 18 0.
0
0.
3.
4.0
4.0
6.0
6.0
10
20
10
50
20
50
50
0.2
0
1 0.2 9 0.2
0.2
0.2
2
8 20
0.23 0.27
10
0.24 0.26
0.25 0.25
0
0.26 0.24
-10
0.27 0.2 0.23 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 - 0.2 0 0
0.2
0
50
10
50
20
50
0.3
0
30
30
0.3
0
1 0.2 9 0.2
30
20
6.0
20
10
19 0. 31 0.
40
-4
0
0. 0. 31 19
19 0. 31 0.
40
10
3. 0
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 -3 0.2 0 0 0
-4
0
0. 0. 31 19
6
S22-FREQUENCY S11-FREQUENCY
WAVELE NG WAVELE NG
0.3
S PARAMETER
0.2
0.3
C
0.
0.
4
N
0.
5
T EN
0.7
T EN
0.6
0.5
0.5
0.7
(
(
0.8
0.8
0.6
0.8
0.6
0.8
0.11 0.39 100
0.11 0.39 100
)
0.7 0.8
0.9
0.9
0.7
0.5 G
)0.1
0.9
0.8 0.9
0.9
0.12 0.38
0.12 0.38
0.9
G
REACTANCE COMPONENT R ---- 0.2 ZO
1.0
90
90
1.0
0.2
1.0 1.0
1.0
0.2
1.0
0.4 0.4
0.4 0.4
0.6
0.6
0.6
0.2
0.8
0
1.
8
1.0 G
1. 0
0.14 0.36 80
0.14 0.36 80
1.6
0
1.
1.
0
1.6
0 1.
0
1.4
1.8 2.0
1.6
1.4
0.15 0.35
70
70
3.0
1.8
3.0
2.0
1.8
6 00
0.
6 00
2.0
4.0 5.0
50
0. 18 32
50
0. 0. 18 32
3. 0
3. 0
10
4.0
6.0
4.0
20
mPC2714T
mPC2714T
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
0.3 -0.05
+0.1
0.130.1
1
2
3
2.8 -0.3
1.5 -0.1
+0.2
+0.2
0 to 0.1 6 5 0.95 4 0.95 0.8 1.1 -0.1
+0.2
1.9 2.90.2
7
mPC2714T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives.
mPC2714T
Recommended condition symbols IR35-00-3
Soldering method Infrared ray reflow
Soldering conditions Package peak temperature: 235 C, Hour: within 30 s. (more than 210 C), Time: 3 times, Limited days; no.* Package peak temperature: 215 C, Hour: within 40 s. (more than 200 C), Time: 3 times, Limited days: no.* Soldering tub temperature: less than 260 C, Hour: within 10 s. Time: 1 time, Limited days: no.* Pin area temperature: less than 300 C, Hour: within 3 s. Limited days: no.*
VPS
VP15-00-3
Wave soldering
WS60-00-1
Pin part heating
*: It is the storage days after opening a dry pack, the storage conditions are 25 C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
8
mPC2714T
Illustration of evaluation board for the test circuit
2.8 1.2 1.2 0.4
9- 7.5 Through holes
10
10
15 2.5 2.5 2.5 2.5 3 3 2.5 2.5 2.5 2.5 7.5 7.5 5 5 22
0.75 1.2 0.2 4.8 7.5 15
0.2
4.8
IN
OUT
VCC
2
3
72- 0.5 Through holes
22 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 15
0.4
0.9
0.75 3.6 2.8 15
2
300.05 (Back side) (Surface)
Note (1) 30 30 0.4 mm double sided copper clad polyimide board. (2 Back side: GND pattern (3) Solder plated on pattern (4) : Through holes
9
300.05
mPC2714T
[MEMO]
10
mPC2714T
[MEMO]
11
mPC2714T
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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