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| HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th. Edition February 1999 Features * * * * * High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 8 5 76 56 7 8 DD D D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 HAT2025R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 20 8 64 8 2.5 150 - 55 to + 150 Unit V V A A A W C C 1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25C) Item Symbol Min 30 20 -- -- 1.3 -- -- 7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.019 0.030 11 660 510 130 30 265 35 58 0.8 55 Max -- -- 10 10 2.4 0.026 0.050 -- -- -- -- -- -- -- -- 1.3 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 8 A, VGS = 0 Note3 IF = 8 A, VGS = 0 diF/ dt = 20 A/s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4.5 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 4 A VDD 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 HAT2025R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) 100 30 10 3 Maximum Safe Operation Area 10 s 100 s Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 PW DC Op er 1 m = s 10 m s Channel Dissipation Drain Current at 2.0 1 0.3 0.1 0.03 ion (P W 1.0 Operation in this area is limited by R DS(on) < Note 10 4 s) 0 50 100 150 Ta (C) 200 Ambient Temperature Ta = 25 C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) 20 Typical Output Characteristics 10V 5 V 5V 4.5 V 4V 3.5 V (A) Typical Transfer Characteristics 50 -25C 25C Tc = 75C 30 I D (A) 16 40 12 Drain Current 8 Drain Current ID Pulse Test 3V 20 4 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 10 V DS = 10 V Pulse Test 0 2 4 6 Gate to Source Voltage 10 8 V GS (V) 3 HAT2025R Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50 20 10 5 0.2 4V 4.5 V VGS = 10 V V DS(on) (V) Pulse Test 0.16 Drain to Source Voltage 0.12 ID=5A 0.08 2A 1A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.04 Drain to Source On State Resistance R DS(on) (m ) 0.20 0.5 1 2 Drain Current 5 10 I D (A) 20 Static Drain to Source on State Resistance R DS(on) (m ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 80 50 Forward Transfer Admittance vs. Drain Current 20 Tc = -25 C 10 5 75 C 2 1 0.5 0.2 25 C 60 I D= 5 A 40 VGS = 4 V 5A 20 0 -40 4.5 V 10 V 2, 1 A 2, 1 A 5, 2, 1 A V DS = 10 V Pulse Test 0.5 1 2 5 10 20 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 4 HAT2025R Body-Drain Diode Reverse Recovery Time 10000 3000 1000 300 100 Crss 30 10 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Ciss Coss Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 500 Reverse Recovery Time trr (ns) 100 50 20 10 5 0.1 di/dt = 20 A/s V GS = 0, Ta = 25C 0.2 0.5 1 2 Reverse Drain Current 5 I DR (A) Capacitance C (pF) 200 Dynamic Input Characteristics Switching Characteristics V GS (V) Gate to Source Voltage 50 20 I D= 8 A 1000 V GS = 4 V, V DD = 10 V 500 PW = 3 s, duty < 1 % V DS (V) Drain to Source Voltage 30 V DS V DD = 5 V 10 V 25 V V GS V DD = 25 V 10 V 5V 4 8 12 16 Gate Charge Qg (nc) Switching Time t (ns) 40 16 12 200 100 50 tr 20 8 tf t d(off) t d(on) 10 4 0 20 20 10 0.1 0 0.2 0.5 1 Drain Current 2 5 I D (A) 10 5 HAT2025R Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 12 5V 8 V GS = 0 V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 e 0.01 ch - f(t) = s (t) * ch - f ch - f = 83.3 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) uls PDM PW T 0.001 1s h p ot D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 6 HAT2025R Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% 7 HAT2025R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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