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5-V Low-Drop Voltage Regulator
TLE 4260
Features * * * * * * * * * * * Low-drop voltage Very low quiescent current Low starting current consumption Integrated temperature protection Protection against reverse polarity Input voltage up to 42 V Overvoltage protection up to 65 V ( 400 ms) Short-circuit proof Suited for automotive electronics Wide temperature range EMC proofed (100 V/m)
P-TO220-5-1
Type w TLE 4260 w TLE 4260 S
Ordering Code Q67000-A8187 Q67000-A9044
Package P-TO220-5-1 P-TO220-5-2 P-TO220-5-2
w Please also refer to the new pin compatible device TLE 4270
Functional Description TLE 4260; S is a 5-V low-drop fixed-voltage regulator in a P-TO220-5-H/S package. The maximum input voltage is 42 V (65 V/ 400 ms). The device can produce an output current of more than 500 mA. It is shortcircuit-proof and incorporates temperature protection that disables the circuit at unpermissibly high temperatures. Due to the wide temperature range of - 40 to 150 C, the TLE 4260; S is also suitable for use in automotive applications. The IC regulates an input voltage VI in the range 6 < VI < 35 V to VQnominal = 5.0 V. A reset signal is generated for an output voltage of VQ < 4.75 V. The reset delay can be set externally with a capacitor. If the output current is reduced below 10 mA, the regulator switches internally to standby and the reset generator is turned off. The standby current drops to max. 700 A.
Semiconductor Group
1
1998-11-01
TLE 4260
Pin Configuration (top view)
TLE 4260
TLE 4260 S
1
2
3
45
GND V VQ QVRES DRES
AEP00577
Pin Definitions and Functions (TLE 4260 and TLE 4260 S) Pin No. 1 2 3 4 5 Symbol Function Input; block directly to ground at the IC by a 470-nF capacitor Reset output; open collector output controlled by the reset delay Ground Reset delay; wired to ground with a capacitor 5-V output voltage; block to ground with a 22-F capacitor
VI
QVRES GND DRES
VQ
Semiconductor Group
2
1998-11-01
TLE 4260
Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage goes below 96% of its typical value, an external capacitor is discharged on pin 4 by the reset generator. If the voltage on the capacitor reaches the lower threshold VST, a reset signal is issued on pin 2 and not cancelled again until the upper threshold VDT is exceeded. For an output current of less than IQN Off = 10 mA the standby changeover turns off the reset generator. The latter is turned on again when the output current increases, the output voltage drops below 4.2 V or the delay capacitor is discharged by external measures. The IC also incorporates a number of internal circuits for protection against: * * * * Overload Overvoltage Overtemperature Reverse polarity
Overvoltage Monitoring
Temperature Sensor
Saturation Control and Protection Circuit 7 Control Amplifier
Input
1
Output
Adjustment
BANDGAP Reference
Buffer
+ -
STANDBY Changeover
RESET Generator
4 RESET Delay 2 RESET
3 GND
AEB00578
Block Diagram
Semiconductor Group
3
1998-11-01
TLE 4260
Absolute Maximum Ratings Parameter Symbol Limit Values min. Input (Pin 1) Input voltage Input current Reset Output (Pin 2) Voltage Current Ground (Pin 3) Current Reset Delay (Pin 4) Voltage Current Output (Pin 5) Differential voltage Current Temperature Junction temperature Storage temperature max. Unit Remarks
VI VI II
- 42 - -
42 65 1.6
V V A
-
t 400 ms
-
VR IR
- 0.3 -
42 -
V -
- internally limited
IGND
- 0.5
-
A
-
VD ID
- 0.3 -
42 -
V -
- internally limited
VI - VQ IQ
- 5.25 VI - 1.4
V A
- -
Tj Tstg
- - 50
32 150
C C
- -
Semiconductor Group
4
1998-11-01
TLE 4260
Operating Range Parameter Input voltage Junction temperature Thermal Resistances Junction ambient Junction case
1)
Symbol
Limit Values min. max. 32 165 - - 40
Unit V C
Remarks
1)
VI Tj
-
Rthja Rthjc
- -
65 3
K/W K/W
- -
See diagram "Output Current versus Input Voltage"
Semiconductor Group
5
1998-11-01
TLE 4260
Characteristics VI = 13.5 V; Tj = 25 C; (unless otherwise specified) Parameter Symbol Limit Values min. Normal Operation Output voltage typ. max. Unit Test Condition
VQ
4.75
5.0
5.25
V
25 mA IQ 500 mA 6 V VI 28 V - 40 C Tj 125 C
Short -circuit current Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Drop voltage
ISC Iq Iq Iq
500 - - - - - - - - - -
1000 - 8.5 50 - 0.35 0.2 15 15 5 54 2x 10-4 10 65 80 0.5 0.3 35 50 25 - -
mA mA1) mA1) mA1) V V mV mV mV dB
VDR VDR Drop voltage VQ Load regulation Supply-voltage regulation VQ
Supply-voltage regulation VQ Ripple rejection Temperature drift of output voltage1) Standby Operation Quiscent current; Iq = II - IQ Quiscent current; Iq = II - IQ
SVR
VQ
VI =17 V to 28 V; VQ = 0 V 6 V VI 28 V IQ = 150 mA 6 V VI 28 V IQ = 500 mA VI 6 V IQ = 500 mA VI = 4.5 V; IQ = 0.5 A VI = 4.5 V; IQ = 0.15 A 25 mA IQ 500 mA VI 6 V to 28 V; IQ = 100 mA VI 6 V to 16 V; IQ = 100 mA f = 100 Hz; Vr = 0.5 Vpp
1/C -
Iq Iq
- -
500 750
700 850
A A
10 V VI 16 V; IQ = 0 mA 10 V VI 16 V; IQ = 5 mA
Semiconductor Group
6
1998-11-01
TLE 4260
Characteristics (cont'd) VI = 13.5 V; Tj = 25 C; (unless otherwise specified) Parameter Symbol Limit Values min. Standby Off/Normal On Current consumption Current consumption Normal Off/Standby On Current consumption Current consumption Switching threshold Switching hysteresis Reset Generator Switching threshold Saturation voltage typ. max. Unit Test Condition
IqSOFF IqNON
- -
1.0 1.7
1.2 2.2
mA mA
see test diagram see test diagram
IqNOFF IqSON IQNOFF
IQ
- - 7.5 2.25
1.55 850 10 3
2.00 12.5 4
mA mA mA
see test diagram see test diagram see test diagram see test diagram
1050 A
VRT
94 - - 7 0.9 2.15 - -
96 0.25 - 10 1.1 2.50 25 5
97 0.40 1 13 1.3 2.75 - -
% V A A V V ms s
in % of VQ; IQ > 500 mA;VI = 6 V
VR IR Reverse current ID Charge current VST Switching threshold Delay switching threshold VDT tD Delay time tt Delay time
General Data Turn-Off voltage Turn-Off hysteresis Leakage current
IR = 3 mA;VI = 4.5 V VR = 5 V
- - -
CD = 100 nF CD = 100 nF
VIOFF
VI
40 - - -
43 3.0 500 -
45 - - 1.5
V V A mA
IQ < 1 mA
-
Reverse output current
1)
IQS IQR
VQ = 0 V; VI = 45 V VQ = 5 V; VI = open
See diagram
Semiconductor Group
7
1998-11-01
TLE 4260
Input 6V to 40V 470 nF
1
5 4 22 F 100 nF 100 k
Output
TLE 4260
2
RESET
3
AES00579
Application Circuit
1000 F
1
5 Q / SC / QS
QR
470 nF
22 F
TLE 4260-2
V +VR
4 d 3 GND 2
1.8 k
VQ
R
VR
VC
Cd 100 nF
AES01509
VDr = V +VQ
V SVR = 20 log R VQ
Test Circuit
Semiconductor Group
8
1998-11-01
TLE 4260
Time Responce
Semiconductor Group
9
1998-11-01
TLE 4260
Time Responce in Standby Condition
Semiconductor Group
10
1998-11-01
TLE 4260
Standby/Normal Changeover
2.5
AED00583
Output Voltage versus Temperature
5.20
AED00028
mA 2.0
VQ
V 5.10
1.5
N ON N OFF
V = 13.5 V
5.00
4.90 1.0
S OFF S ON Q
4.80
0.5
QN OFF
0 7 8 9
QN ON
4.70
10 11 12 13 14 mA 16
4.60 -40
0
40
80
120 C 160
j
Q
Drop Voltage versus Output Current
Current Consumption versus Output Current
80 mA 70 60
AED00585
800
AED00584
D Dr mV 700
600 500 400 300 200 100 0
V = 4.5 V T j = 25 C
V = 13.5 V
50 40 30 20 10 0
0
100
200
300
400
mA
600
0
100
200
300
400
mA
600
Q
Q
Semiconductor Group
11
1998-11-01
TLE 4260
Current Consumption versus Input Voltage
120
AED00590
Output Voltage versus Input Voltage
12
AED00591
mA 100
VQ
V 10
RL = 10
80
8
RL = 10
60
6
40
4
20
2
0
0
10
20
30
40 V 50
V
0
0
2
4
6
8
V 10
V
Output Current versus Input Voltage
1.2
AED00587
Q
A 1.0
T j = 25 C
0.8
0.6
0.4
0.2
0
0
10
20
30
40 V 50
V
Semiconductor Group
12
1998-11-01
TLE 4260
Package Outlines P-TO220-5-1 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75
+0.1
4.6 -0.2
1x45
1.27
2.8
+0.1
19.5 max 16 0.4
8.8 -0.2
2.6 1 1.7 0.8
+0.1 1)
5
0.4 +0.1
0.6
M
5x
4.5 0.4 8.4 0.4
Weigth approx. 2.1 g
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Dimensions in mm Semiconductor Group 13 1998-11-01
GPT05107
1) 1-0.15 at dam bar (max 1.8 from body) 1) 1-0.15 im Dichtstegbereich (max 1.8 vom Korper)
8.6 0.3 10.2 0.3
15.4 0.3
TLE 4260
P-TO220-5-1 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75 +0.1
2.8
4.6 -0.2
1x45
1.27
+0.1
10.9 0.2
1 1.7
5
12.9 0.2
0.4 +0.1 0.8 +0.1 1)
0.6
M
2.6 0.15
Weigth approx. 2.1 g
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Dimensions in mm Semiconductor Group 14 1998-11-01
GPT05256
5x 1) 1-0.15 at dam bar (max 1.8 from body) 1) 1-0.15 im Dichtstegbereich (max 1.8 vom Korper)
8.8 -0.2
15.4 0.3

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