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| PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 807 BC 808 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BC 807 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 50 5 Values BC 808 25 30 5 500 1 100 200 330 150 - 65 ... + 150 Unit V mA A mA mW C Total power dissipation, TC = 79 C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 807 BC 808 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 807 BC 808 Collector-base breakdown voltage IC = 100 A BC 807 BC 808 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 807-16, BC 808-16 BC 807-25, BC 808-25 BC 807-40, BC 808-40 IC = 300 mA; VCE = 1 V BC 807-16, BC 808-16 BC 807-25, BC 808-25 BC 807-40, BC 808-40 Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz 1) Values typ. max. Unit V(BR)CE0 45 25 V(BR)CB0 50 30 V(BR)EB0 ICB0 - - IEB0 hFE 100 160 250 60 100 170 VCEsat VBEsat - - 160 250 350 - - - - - 250 400 630 - - - 0.7 2 - - - - 100 50 100 5 - - - - - - - - - - V nA A nA - V fT Cobo Cibo - - - 200 10 60 - - - MHz pF Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BC 807 BC 808 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB0 = 25 V Semiconductor Group 4 BC 807 BC 808 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5 |
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