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APT10086SVR
1000V 13A 0.860
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
D3PAK
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Surface Mount D3PAK Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT10086SVR UNIT Volts Amps
1000 13 52 30 40 370 2.96 -55 to 150 300 13 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 13 0.86 25 250 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5570 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10086SVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT
3700 350 180 185 16 90 12 10 43 10
4440 490 270 275 24 135 24 20 65 20
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
13 52 1.3 800 11
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.34 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 15.38mH, R = 25, Peak I = 13A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05
PDM
0.01 0.005
0.02 0.01
Note:
t1 t2
JC
050-5570 Rev B
Z
SINGLE PULSE 0.001 10-5
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT10086SVR
25 ID, DRAIN CURRENT (AMPERES) VGS=5.5V, 6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 25 VGS=15V 20 VGS=7V & 10V 15 VGS=5.5V & 6V 5V
20 5V 15
10 4.5V 5 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 30 0
10 4.5V 5 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.3
V
GS
ID, DRAIN CURRENT (AMPERES)
24
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.2
18
1.1 VGS=10V VGS=20V 1.0
12 TJ = +125C TJ = +25C 0 TJ = -55C
6
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 14 ID, DRAIN CURRENT (AMPERES) 12 10 8 6 4 2 0
0.9
0
5 10 15 20 25 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I = 0.5 I [Cont.]
D D GS
1.15
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V = 10V
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.0
1.1 1.0
1.5
0.9 0.8 0.7 050-5570 Rev B
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT10086SVR
60 ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10S 100S C, CAPACITANCE (pF)
15,000 10,000 5,000 Ciss
10 5 1mS
10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC
1,000 500
Coss
Crss .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 50 100
.1
1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=100V VDS=200V 12 VDS=500V 8
16
TJ =+150C 10 5
TJ =+25C
1 .5
4
50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
D PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
1.04 (.041) 1.15 (.045)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
050-5570 Rev B
Source Drain Gate Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058

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