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| Silicon Schottky Diode BAT 17-07 q q For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code (tape and reel) Q62702-A918 Pin Configuration 1 2 3 4 C1 C2 A2 A1 Marking Package BAT 17-07 57 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS 60 C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 130 150 150 - 55 ... + 150 - 55 ... + 150 Unit V mA mW C C C VR IF Ptot Tj Top Tstg Rth JA Rth JS 750 590 K/W K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 10.94 BAT 17-07 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 A Reverse current VR = 3 V VR = 3 V, TA = 60 C VR = 4 V Forward voltage IF = 0.1 mA IF = 1 mA IF = 10 mA Diode capacitance VR = 0 V f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Value typ. max. Unit V(BR) 4 - - - - 275 340 425 0.75 8 - V A - - - 0.25 1.25 10 mV 200 750 350 350 450 600 pF - 1 - 15 IR VF CT rS Semiconductor Group 2 BAT 17-07 Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Differential forward resistance RF = f (IF) f = 10 kHz Semiconductor Group 3 BAT 17-07 Forward current IF = f (TA; TS*) *Package mounted on aluminum Semiconductor Group 4 |
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