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CALIFORNIA MICRO DEVICES
PACDN010
P/ACTIVETM SCHOTTKY DIODE MEMORY BUS TERMINATOR
Features Provides proper bus termination independent of card loading conditions Schottky diode technology; fast turn on and reverse recovery characteristics 36 integrated diodes in a single package offers 18 channel, dual rail clamping action 24-pin QSOP package saves board space and eases layout in space critical bus termination applications Available in 24 pin TSSOP package for component height constrained modules Applications SDRAM Memory Bus Termination PCI v2.1 Bus Termination for Intel-based Pentium(R) and Pentium Pro systems
Refer to AP-201 Termination Application Note for further information.
Product Description Reflections on high speed Memory Buses lead to undershoot and overshoot disturbances which may result in improper system operation. Resistor terminations, when used to terminate high speed memory or data lines, increase power consumption and degrade output (high) levels resulting in reduced noise immunity. Schottky diode termination is the best overall solution for applications in which power consumption and noise immunity are critical considerations. CAMDs P/Active DN010 Schottky Diode Memory Bus Terminator is specifically designed to minimize undershoot/ overshoot disturbances caused by reflection noise on SDRAM bus lines as well as v2.1 66MHz PCI buses. This highly integrated Schottky diode network provides very effective termination performance for high speed Memory Bus lines under variable loading conditions. The packaged device supports up to 18 terminated lines each of which can be simultaneously clamped to both ground and power supply rail. SCHEMATIC CONFIGURATION
VDD VDD GND
24
23
22
21
20
19
18
17
16
15
14
13
1
GND
2
3
4
5
6
GND
7
8
9
10
11
12
VDD
P/Active is a trademark of California Micro Devices Corp. Pentium Pro is a registered trademark of Intel. Covered by one or more of U.S. Pat. Nos. 5,355,014, 5,370,766, and 5,514,612 and other pending applications.
(c) 2000 California Micro Devices Corp. All rights reserved. 4/00
C0120497D
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
1
CALIFORNIA MICRO DEVICES
STANDARD SPECIFICATION Absolute Maximum R atings
Parame te r Supply Voltage Channel clamp current (continuous) Operating Temperature Storage Temperature Package Power Rating QSOP @ 70C QSOP @ 70C S y mb o l
PACDN010
R ating -0.3V to 7V 50mA 0C to 70C -60C to 150C 1.00W, max. 1.00W, max.
Iclamp
Tstg
VDD
The absolute maximum ratings are limiting values, to be applied individually, beyond which the device may be permanently damaged. Functional operation under any of these conditions is not guaranteed. Exposing the device to its absolute maximum rating may affect its reliability.
Parameter
D iode forward Voltage
DIODE CHARACTERISTICS (TA = 0C TO 70C) Condition Min Typ
IF = 16mA IF = 50mA Z0 =50, Logic Swing 0.4V to 3.0V 0 V IN V D D f = 1MHz, VIN = 2.5V, TA = 25C, VDD = 5.0V MIL-ST D -883, Me thod 3015 2K V 0.65V 0.80V 125MHz 0.1A 5pF
Max
0.85V 1.0V 5A
Max. Bus Speed (See Note 1) Channel leakage Input Capacitance ESD Protection
Pins
24 24
Package
QS OP T S S OP
STANDARD PART ORDE RING INFORMATION Ordering Part Number Style Tubes Tape & Reel
PA C D N 0 1 0 Q / T PA C D N 0 1 0 T / T PA C D N 0 1 0 Q / R PA C D N 0 1 0 T / R
Part Marking
PA C D N 0 1 0 Q PA C D N 0 1 0 T
Note 1: The presence of a Schottky diode for clamping bus overshoots will cause additional delays of signal edges. These delays are the result of diode characteristics such as forward voltage, diode capacitance and the reverse recovery phenomenon. The ground clamp diode is most critical, particularly if VLSI circuits such as static or dynamic memories are directly connected to busses without any buffer stages. The incremental delay observed on a positive edge following a negative transition that forward biased the Schottky diode is less than 800 pS. That represents less than 10% of the 125 MHz (8 nS period) bus cycle time.
(c) 2000 California Micro Devices Corp. All rights reserved. 4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
2
CALIFORNIA MICRO DEVICES
QSOP - TOP VIEW
PACDN010
Power Derating Curve
H N
CAMD
EH 1
D
MECHANICAL SPECIFICATIONS
Lead Plating Lead Material Lead Coplanarity Substrate Material Body Material Flammabiltiy Tin-Lead Copper Alloy 0.004" (0.102mm) Silicon Molded Epoxy UL94V-0
e
B
A C L A1
Package Dimensions, Power Dissipation & Information Package QSOP P in s 24 JEDEC MO137 mm inches m in ma x m in ma x 1.35 1.75 0.053 0.069 A 0.10 0.25 0.004 0.010 A1 0.20 0.30 0.008 0.012 B 0.18 0.25 0.007 0.010 C 8.56 8.73 0.337 0.344 D 3.81 3.98 0.150 0.157 E 0.64 BSC 0.025 BSC e 5.79 6.19 0.228 0.244 H 0.40 1.27 0.016 0.050 L 1 .0 0 W PD @ 70C # / tube 58 pcs # / tape & reel 2,500 pcs
(c) 2000 California Micro Devices Corp. All rights reserved. 4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
3
CALIFORNIA MICRO DEVICES
TSSOP - TOP VIEW
PACDN010
Power Derating Curve
H
CAMD
1
EH
MECHANICAL SPECIFICATIONS
D
Lead Plating Lead Material Lead Coplanarity Substrate Material Body Material Flammabiltiy
Tin-Lead Copper Alloy 0.004" (0.102mm) Silicon Molded Epoxy UL94V-0
e
B
A C L A1
Package Dimensions, Power Dissipation & Information Package TSSOP P in s 24 JEDEC MO153 mm inches m in ma x m in ma x 1.10 0.433 A 0.05 0.15 0.002 0.006 A1 0.19 0.30 0.0075 0.0118 B 0.09 0.20 0.0035 0.0079 C 7.70 7.90 0.303 0.311 D 4.30 4.50 0.169 0.177 E 0.65 BSC 0.0256 BSC e 6.25 6.50 0.246 0.256 H 0.50 0.70 0.020 0.028 L PD @ 70C 1 .0 0 W # / tube 62 pcs # / tape & reel 2,500 pcs
(c) 2000 California Micro Devices Corp. All rights reserved. 4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
4

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