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 PTF 10137 12 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability
* * * *
Typical Output Power & Efficiency vs. Input Power
20 Efficiency (%) 80
*
Output Power (Watts)
15
60
VDD = 28 V
10
Efficiency
IDQ = 160 mA f = 960 MHz
Output Power (W)
40
A-1
234
101 37 5
699
42
5
20
0 0.0 0.2 0.4 0.6
0
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
16.5 12 55 --
Typ
18 15 60 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10137
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.9
Max
-- 1 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 58 0.33 -40 to 150 3.0
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Broadband Test Fixture Performance
20 80 Gain (dB) 70 60 Efficiency (%) 50 40 30 Output Power (W) 20 80 Gain (dB) 16 70 Efficiency (%) 12
18 17 16
Output Power & Efficiency
Gain
15 14 13 12 11 840 880 920
Gain
IDQ = 160 mA
IDQ = 160 mA
8
-10 50 Return Loss (dB) -20
POUT = 12 W
960
10 1000
4 960
970
980
990
40 1000
Frequency (MHz)
Frequency (MHz)
2
Return Loss
VDD = 28 V
VDD = 28 V
60
Efficiency
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
e
Power Gain vs. Output Power
19 18 20
PTF 10137
Output Power vs. Supply Voltage
Output Power (Watts)
IDQ = 160 mA
18 16 14 12 10
Power Gain (dB)
17 IDQ = 80 mA 16 15 14 0.1 1.0 10.0 100.0 IDQ = 40 mA
VDD = 28 V f = 960 MHz
IDQ = 160 mA f = 960 MHz
24
26
28
30
32
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
0 -10 70
Capacitance vs. Supply Voltage
6 5 60 50 40 30 20 10
f1 =960.0 MHz, f2 = 960.1 MHz
3rd Order
Cds and Cgs (pF)
VDD = 28 V, IDQ = 160 mA
IMD (dBc)
-20 -30
Cgs Crss Cds
0 10 20 30 40
3 2 1 0
5th -40 7th -50 -60 0 5 10 15 20
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02
Voltage normalized to 1.0 V Series show current (A)
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 0.075 0.585 1.095 0.33 0.84 1.35
Temp. (C)
3
Crss (pF)
VGS = 0 V f = 1 MHz
4
PTF 10137
Impedance Data
Z Source
D
e
Z Load
Z0 = 50 W
->
RA T O
R --
VDD = 28 V, IDQ = 160 mA, P-1dB = 18 W
G S
RD G E NE
S TOW A
- WAVELENG TH
Frequency
MHz 840 860 880 900 920 940 960 980 1000
Z Source W
R 1.1 0.8 0.8 0.7 0.6 0.8 1.1 1.6 1.6 jX 1.9 0.8 0.1 -0.3 -0.7 -0.9 -1.2 -1.2 -0.9 R 4.1 3.8 3.7 3.6 4.1 4.3 4.8 5.3 5.0
Z Load W
jX 4.3 3.3 2.8 2.3 2.1 2.0 1.6 2.6 3.7
Z Source
840 MHz
0.0 0.1 0.2
LOAD S TO WA RD NGTH
1000 MHz
0.1
Typical Scattering Parameters
(VDS = 28 V, ID = 450 mA)
f (MHz)
100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
Mag
0.862 0.866 0.872 0.881 0.888 0.896 0.905 0.910 0.920 0.927 0.932 0.940 0.942 0.948 0.953 0.955 0.958 0.961 0.963 0.967 0.967 0.967 0.970 0.970 0.972 0.973 0.978 0.978 0.981 0.981 0.982 0.983 0.983 0.983 0.983 0.981 0.981 0.981 0.981 0.981 0.979 0.979 0.975
S11
Ang
-126 -135 -146 -153 -157 -161 -164 -166 -168 -169 -171 -173 -174 -175 -177 -178 -179 -180 179 178 177 176 175 174 173 172 172 171 170 169 168 167 167 166 165 164 163 162 161 161 160 159 158
Mag
25.8 21.1 15.5 12.0 9.57 7.86 6.55 5.53 4.74 4.09 3.57 3.15 2.79 2.49 2.23 2.01 1.83 1.66 1.52 1.39 1.27 1.18 1.09 1.01 0.943 0.874 0.825 0.772 0.729 0.689 0.647 0.615 0.580 0.549 0.525 0.499 0.478 0.454 0.431 0.414 0.395 0.382 0.371
S21
Ang
101 93.6 80.9 71.6 63.7 57.0 51.0 45.7 40.8 36.6 32.4 28.9 25.5 22.1 19.3 16.2 13.6 11.1 8.52 6.44 4.07 1.96 0.12 -2.03 -3.66 -5.57 -7.37 -8.77 -10.7 -12.1 -13.9 -15.7 -16.9 -18.7 -20.3 -21.8 -23.4 -24.3 -26.0 -27.3 -28.6 -30.0 -30.7 4
Mag
0.018 0.018 0.018 0.017 0.016 0.015 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.003 0.003 0.003 0.004 0.004 0.005 0.006 0.006 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.013 0.013 0.014 0.015 0.015 0.016 0.017 0.018 0.018 0.019 0.019 0.020
S12
<
AV -- - W
E LE
Ang
11.5 3.96 -5.92 -13.4 -19.1 -24.0 -27.9 -31.0 -32.8 -34.0 -35.0 -34.2 -32.7 -27.9 -20.5 -8.60 10.9 32.3 47.7 57.8 63.1 68.8 70.7 73.2 74.5 75.7 75.8 76.4 76.6 77.2 76.3 75.0 74.7 74.4 74.7 74.0 72.9 72.1 71.3 71.3 70.8 69.8 69.1
Mag
0.575 0.583 0.587 0.613 0.646 0.679 0.713 0.742 0.770 0.792 0.813 0.834 0.849 0.865 0.874 0.884 0.896 0.902 0.912 0.917 0.921 0.929 0.932 0.937 0.943 0.943 0.950 0.948 0.952 0.958 0.958 0.966 0.964 0.961 0.962 0.958 0.967 0.967 0.967 0.969 0.963 0.969 0.969
S22
Ang
-78.7 -86.4 -97.4 -106 -113 -119 -124 -129 -133 -137 -141 -144 -147 -150 -152 -155 -157 -159 -161 -162 -164 -166 -167 -169 -170 -172 -173 -174 -176 -177 -178 -179 -180 179 178 176 175 175 173 173 172 170 169
0.3
0.2
Z Load
0.1
840 MHz 1000 MHz
e
Test Circuit
PTF 10137
Test Circuit Schematic for f = 960 MHz
DUT
l1, l6 l2 l3 l4 l5
PTF 10137 0.197 l 960 MHz 0.018 l 960 MHz 0.184 l 960 MHz 0.047 l 960 MHz Microstrip 50 W Microstrip 10 W Microstrip 44 W Microstrip 12.7 W Microstrip 50 W
C1 C2,C4,C5,C8 C3,C6 C7 C9, C10 R1, R2 L1,L2 Circuit Board
ATC 100 B Capacitor, 8.2 pF, ATC 100 B ATC 100 B Capacitor, 36 pF, ATC 100 B Digi-Key P4525-ND Capacitor, 0.1 mF, 50V Digi-Key P5182-ND Capacitor, 100 mF, 50V ATC 100 B 2.0 pF Capacitor, ATC 100 B Digi-Key 2.2 QBK Resistor, 220 W, 1/4W N/A 4 Turn, 20 AWG, .120 I.D. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Assembly Diagram (not to scale)
5
PTF 10137
Test Circuit
e
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1999 Ericsson Inc. EUS/KR 1301-PTF 10137 Uen Rev. A 10-28-99
6


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