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INTEGRATED CIRCUITS
DATA SHEET
TEA1093 Hands-free IC
Product specification Supersedes data of 1995 May 18 File under Integrated Circuits, IC03 1996 Feb 09
Philips Semiconductors
Product specification
Hands-free IC
FEATURES * Line powered supply with: - adjustable stabilized supply voltage - power down function * Microphone channel with: - externally adjustable gain - microphone mute function * Loudspeaker channel with: - externally adjustable gain - dynamic limiter to prevent distortion - rail-to-rail output stages for single-ended or bridge-tied load drive - logarithmic volume control via linear potentiometer - loudspeaker mute function * Duplex controller consisting of: - signal envelope and noise envelope monitors for both channels with: externally adjustable sensitivity externally adjustable signal envelope time constant externally adjustable noise envelope time constant - decision logic with: externally adjustable switch-over timing externally adjustable idle mode timing externally adjustable dial tone detector in receive channel - voice switch control with: adjustable switching range constant sum of gain during switching constant sum of gain at different volume settings. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1093 TEA1093T DIP28 SO28 DESCRIPTION plastic dual in-line package; 28 leads (600 mil) plastic small outline package; 28 leads; body width 7.5 mm GENERAL DESCRIPTION APPLICATIONS * Line-powered telephone sets with hands-free/listening-in functions.
TEA1093
The TEA1093 is a bipolar circuit intended for use in line-powered telephone sets. In conjunction with a member of the TEA1060 family or PCA1070 transmission circuits, the device offers a hands-free function for line powered telephone sets. It incorporates a supply, a microphone channel, a loudspeaker channel and a duplex controller with signal and noise monitors on both channels.
VERSION SOT117-1 SOT136-1
1996 Feb 09
2
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
QUICK REFERENCE DATA VSREF = 4.2 V; VGND = 0 V; ISUP = 15 mA; VSUP = 0 V (RMS); f = 1 kHz; Tamb = 25 C; PD = LOW; MUTET = LOW; RL = 50 ; RVOL = 0 ; measured in test circuit of Fig.15; unless otherwise specified. SYMBOL ISUP VBB IBB(pd) ISUP(pd) Gvtx Gvtxr Gvrx PARAMETER operating supply current (pin SUP) stabilized supply voltage current consumption from pin VBB in power-down condition current consumption from pin SUP in power-down condition voltage gain from pin MIC to pin MOUT in transmit mode voltage gain adjustment with RGAT voltage gain in receive mode the difference between RIN1 and RIN2 to LSP1 or LSP2 single-ended load the difference between RIN1 and RIN2 to the difference between LSP1 and LSP2 bridge-tied load Gvrxr VO(p-p) SWRA SWRA Tamb Note 1. Corresponds to 100 mW output power. voltage gain adjustment with RGAR bridge-tied load (peak-to-peak value) switching range switching range adjustment with RSWR referenced to RSWR = 365 k operating ambient temperature VRIN = 150 mV (RMS); RL = 33 ; note 1 VRIN = 20 mV (RMS); RGAR = 66.5 k; RL = 50 PD = HIGH; VBB = 3.6 V CONDITIONS 7 3.35 - MIN. - 3.6 400 55 15 - 18 24 TYP. MAX. 140 3.85 550 75 17.5 +10 20.5 26.5 UNIT mA V A A dB dB dB dB
PD = HIGH; Vsup = 4.5 V - VMIC = 1 mV (RMS); RGAT = 30.1 k 12.5 -10 15.5 21.5
-15 - - -40 -25
- 5.15 40 - -
+15 - - +12 +75
dB V dB dB C
1996 Feb 09
3
Philips Semiconductors
Product specification
Hands-free IC
BLOCK DIAGRAM
handbook, full pagewidth
TEA1093
to TEA106X
9
SUP
TR1
SUPPLY to dynamic limiter
VBB POWER DOWN PD
10 17
CVBB
TR2 315 mV
to TEA106X
7
SREF
V
V
SWITCH
VOLTAGE STABILIZER
VA GND
15
8
VBB CMIC
19
MUTET
MICROPHONE CHANNEL
GAT
21
RGAT
22
MIC
V
I
I
V
MOUT MICGND
20 to TEA106X 18
RMIC
RTSEN CTSEN
28
TSEN
DUPLEX CONTROLLER LOG
IDT Vref SWT
16
RIDT
TEA1093
BUFFER
14 CSWT
CTENV
27
TENV 13 mV
CTNOI
26 23
TNOI RNOI
BUFFER
ATTENUATOR STAB 13
RSTAB
CRNOI
BUFFER LOGIC
VOICE SWITCH SWR 12 RSWR
24 CRENV RRSEN CRSEN
RENV BUFFER
13 mV
25
RSEN
LOG
Vdt
RGAR CLSP1
5
GAR from voltage stabilizer LSP1 DLC/ MUTER
2 RIN1 V I I V RIN2 2 3 from TEA106X from TEA106X
6 CDLC
1
DYNAMIC LIMITER VOLUME CONTROL LOUDSPEAKER CHANNEL
MGD216
VOL
11
RVOL
4
LSP2
-1
Fig.1 Block diagram.
1996 Feb 09
4
Philips Semiconductors
Product specification
Hands-free IC
PINNING SYMBOL DLC/MUTER RIN1 RIN2 LSP2 GAR LSP1 SREF GND SUP VBB VOL SWR STAB SWT VA IDT PD MICGND MUTET MOUT GAT MIC RNOI RENV RSEN TNOI TENV TSEN PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 DESCRIPTION dynamic limiter timing adjustment, receiver channel mute input receiver amplifier input 1 receiver amplifier input 2 loudspeaker amplifier output 2 receiver gain adjustment loudspeaker amplifier output 1 supply reference input ground reference supply input stabilized supply output receiver volume adjustment switching range adjustment reference current adjustment switch-over timing adjustment VBB voltage adjustment idle mode timing adjustment power-down input ground reference for the microphone amplifier transmit channel mute input microphone amplifier output microphone gain adjustment microphone input receive noise envelope timing adjustment receive signal envelope timing adjustment receive signal envelope sensitivity adjustment transmit noise envelope timing adjustment transmit signal envelope timing adjustment transmit signal envelope sensitivity adjustment Fig.2 Pin configuration.
SWT 14
MGD217
TEA1093
handbook, halfpage
DLC/MUTER RIN1 RIN2 LSP2 GAR LSP1 SREF GND SUP
1 2 3 4 5 6 7
28 TSEN 27 TENV 26 TNOI 25 RSEN 24 RENV 23 RNOI 22 MIC
TEA1093
8 9 21 GAT 20 MOUT 19 MUTET 18 MICGND 17 PD 16 IDT 15 VA
VBB 10 VOL 11 SWR 12 STAB 13
1996 Feb 09
5
Philips Semiconductors
Product specification
Hands-free IC
FUNCTIONAL DESCRIPTION The values given in the functional description are typical values except when otherwise specified. A principle diagram of the TEA106X is shown on the left side of Fig.3. The TEA106X is a transmission circuit of the TEA1060 family intended for hand-set operation. It incorporates a receiving amplifier for the earpiece, a transmit amplifier for the microphone and a hybrid. For more details on the TEA1060 family, please refer to "Data Handbook IC03". The right side of Fig.3 shows a principle diagram of the TEA1093, a hands-free add-on circuit with a microphone amplifier, a loudspeaker amplifier and a duplex controller. As can be seen from Fig.3, a loop is formed via the sidetone network in the transmission circuit and the acoustic coupling between loudspeaker and microphone of the hands-free circuit. When this loop gain is greater than 1, howling is introduced. In a full duplex application,
TEA1093
this would be the case. The loop-gain has to be much lower than 1 and therefore has to be decreased to avoid howling. This is achieved by the duplex controller.The duplex controller of the TEA1093 detects which channel has the `largest' signal and then controls the gain of the microphone amplifier and the loudspeaker amplifier so that the sum of the gains remains constant. As a result, the circuit can be in three stable modes: 1. Transmit mode (Tx mode): the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. 2. Receive mode (Rx mode): the gain of the loudspeaker amplifier is at its maximum and the gain of the microphone amplifier is at its minimum. 3. Idle mode: the gain of the amplifiers is halfway between their maximum and minimum value. The difference between the maximum gain and minimum gain is called the switching range.
handbook, full pagewidth
acoustic coupling telephone line sidetone DUPLEX CONTROL
HYBRID
TEA106X
TEA1093
MGD218
Fig.3 Hands-free telephone set principles.
1996 Feb 09
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Philips Semiconductors
Product specification
Hands-free IC
Supply: pins SUP, SREF, VBB, GND, VA and PD As can be seen from Fig.4, the line current is divided between the speech-transmission circuit (ITR + ICC) and the TEA1093 circuit (ISUP). It can be shown that: ISUP = Iline - ITR - ICC Where: ITR = VSUP - VSREF/RSREF VSUP - VSREF = 315 mV RSREF = 100 ICC 1 mA It follows that ISUP ILINE - 4 mA. The TEA1093 stabilizes its own supply voltage of 3.6 V at VBB. The voltage on VBB can be adjusted by means of an external resistor RVA.
TEA1093
When RVA is connected between pin VA and GND, the voltage on VBB is increased, when connected between pin VA and VBB, it is decreased. This is shown in Fig.5. Two capacitors of 4.7 nF (CSREF and CSTAB) are required to ensure stability of the supply block. When VSUP is greater than VBB + 0.4 V, the current ISUP is supplied to VBB via TR1. When VSUP is less, the current is shunted to GND via TR2, which prevents distortion on the line. To reduce current consumption during pulse dialling or register recall (flash), the TEA1093 is provided with a power-down (PD) input. When the voltage on PD is HIGH, the current consumption from SUP is 55 A and from VBB 400 A. Therefore a capacitor of 470 F (CVBB) is sufficient to power the TEA1093 during pulse dialling.
CSTAB
handbook, full pagewidth
4.7 nF Iline ISUP 9 SUP TR1 TR2 RSREF 100 ICC ITR 7 SREF
line
VBB 10 to dynamic limiter POWER DOWN PD 17
315 mV
V
V
SWITCH
VOLTAGE STABILIZER
VA 15
RVA
CVBB
470 F
VCC
LN
TEA1093
8 CSREF 4.7 nF
TEA106X
VEE SLPE
GND
MGD219
Fig.4 Supply arrangement.
1996 Feb 09
7
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
Microphone channel: pin MIC, GAT, MOUT, MICGND and MUTET
MGD220
handbook, halfpage
10
VBB (V) 8
6
RVA(VA-GND)
The TEA1093 has an asymmetrical microphone input MIC with an input resistance of 20 k. The gain of the input stage varies according to the mode of the TEA1093. In the transmit mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The output capability at pin MOUT is 20 A (RMS). In the transmit mode, the overall gain of the microphone amplifier (from pin MIC to MOUT) can be adjusted from 5 dB up to 25 dB to suit specific application requirements. The gain is proportional to the value of RGAT and equals 15 dB typical with RGAT = 30.1 k. A capacitor must be connected in parallel with RGAT to ensure stability of the microphone amplifier. Together with RGAT, it also provides a first-order low-pass filter. By applying a HIGH level on pin MUTET, the microphone amplifier is muted and the TEA1093 is automatically forced into the receive mode.
4 3.6 V without RVA RVA(VA-VBB) 2 1 10 102 RVA (k) 103
Fig.5 VBB as a function of RVA.
handbook, full pagewidth
VBB CMIC
19 MUTET
GAT 21
RGAT
22 MIC
V
I
I
V
MOUT 20
to TEA106X
RMIC to envelope detector from voice switch to logic MICGND 18
MGD221
Fig.6 Microphone channel.
1996 Feb 09
8
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
handbook, full pagewidth
RGAR
5 GAR from voltage stabilizer 6 LSP1 V I
to to to/from envelope logic voice switch detector
CLSP1
RIN1 2 I V RIN2 3 from TEA106X
CDLC
1 DLC/MUTER
DYNAMIC LIMITER
4 LSP2
-1
VOLUME CONTROL
VOL 11
RVOL
MGD222
Fig.7 Loudspeaker channel.
Loudspeaker channel LOUDSPEAKER AMPLIFIER: PINS RIN1, RIN2, GAR, LSP1 AND LSP2 The TEA1093 has symmetrical inputs for the loudspeaker amplifier with an input resistance of 40 k between RIN1 and RIN2 (2 x 20 k). The input stage can accommodate signals up to 390 mV (RMS) at room temperature for 2% of total harmonic distortion (THD). The gain of the input stage varies according to the mode of the TEA1093. In the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The rail-to-rail output stage is designed to power a loudspeaker which is connected as a single-ended load (between LSP1 and GND) or as a bridge-tied load (between LSP1 and LSP2). In the receive mode, the overall gain of the loudspeaker amplifier can be adjusted from 3 dB up to 39 dB to suit specific application requirements. The gain from RIN1 or RIN2 to LSP1 is proportional to the value of RGAR and equals 18 dB with RGAR = 66.5 k. The second output LSP2 is in opposite phase with LSP1. Therefore, in the basic application, the gain between RIN1-RIN2 to LSP1-LSP2 equals 24 dB typical with RGAR = 66.5 k. A capacitor connected in parallel with RGAR can be used to provide a first-order low-pass filter.
VOLUME CONTROL: PIN VOL The loudspeaker amplifier gain can be adjusted with the potentiometer RVOL. A linear potentiometer can be used to obtain logarithmic control of the gain at the loudspeaker amplifier. Each 950 increase of RVOL results in a gain loss of 3 dB. The maximum gain reduction with the volume control is internally limited to the switching range. DYNAMIC LIMITER: PIN DLC/MUTER The dynamic limiter of the TEA1093 prevents clipping of the loudspeaker output stages and protects the operation of the circuit when the supply condition falls below a certain level. Hard clipping of the loudspeaker output stages is prevented by rapidly reducing the gain when the output stages start to saturate. The time in which gain reduction is effected (clipping attack time) is approximately a few milliseconds. The circuit stays in the reduced gain mode until the peaks of the loudspeaker signals no longer cause saturation. The gain of the loudspeaker amplifier then returns to its normal value within the clipping release time (typical 250 ms). Both attack and release times are proportional to the value of the capacitor CDLC. The total harmonic distortion of the loudspeaker output stages, in reduced gain mode, stays below 5% up to 10 dB (minimum) of input voltage overdrive [providing VRIN is below 390 mV (RMS)].
1996 Feb 09
9
Philips Semiconductors
Product specification
Hands-free IC
When the supply conditions drop below the required level, the gain of the loudspeaker amplifier is reduced in order to prevent the TEA1093 from malfunctioning. Only the gain of the loudspeaker amplifier is affected since it is considered to be the major power consuming part of the TEA1093. When the TEA1093 experiences a loss of current, the supply voltage VBB decreases. In this event, the gain of the loudspeaker amplifiers is slowly reduced (approximately a few seconds). When the supply voltage continues to decrease and drops below an internal voltage threshold of 2.75 V, the gain of the loudspeaker amplifier is rapidly reduced (approximately 1 ms). When normal supply conditions are resumed, the gain of the loudspeaker amplifier is increased again. This system ensures that in the event of large continuous signals, all current is used to power the loudspeaker while the voltage on pin VBB remains at its nominal value. By forcing a level lower than 0.2 V on pin DLC/MUTER, the loudspeaker amplifier is muted and the TEA1093 is automatically forced into the transmit mode. Duplex controller SIGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI The signal envelopes are used to monitor the signal level strength in both channels. The noise envelopes are used to monitor background noise in both channels. The signal and noise envelopes provide inputs for the decision logic. The signal and noise envelope detectors are shown in Fig.8.
TEA1093
For the transmit channel, the input signal at MIC is 40 dB, amplified to TSEN. For the receive channel, the differential signal between RIN1 and RIN2 is 0 dB amplified to RSEN. The signals from TSEN and RSEN are logarithmically compressed and buffered to TENV and RENV respectively. The sensitivity of the envelope detectors is set with RTSEN and RRSEN. The capacitors connected in series with the two resistors block any DC component and form a first-order high-pass filter. In the basic application, see Fig.16, it is assumed that VMIC = 1 mV (RMS) and VRIN = 100 mV (RMS) nominal and both RTSEN and RRSEN have a value of 10 k. With the value of CTSEN and CRSEN at 100 nF, the cut-off frequency is at 160 Hz. The buffer amplifiers leading the compressed signals to TENV and RENV have a maximum source current of 120 A and a maximum sink current of 1 A. Together with the capacitor CTENV and CRENV, the timing of the signal envelope monitors can be set. In the basic application, the value of both capacitors is 470 nF. Because of the logarithmic compression, each 6 dB signal increase means 18 mV increase of the voltage on the envelopes TENV or RENV at room temperature. Thus, timings can be expressed in dB/ms. At room temperature, the 120 A sourced current corresponds to a maximum rise-slope of the signal envelope of 85 dB/ms. This is sufficient to track normal speech signals. The 1 A current sunk by TENV or RENV corresponds to a maximum fall-slope of 0.7 dB/ms. This is sufficient for a smooth envelope and also eliminates the effect of echoes on switching behaviour.
handbook, full pagewidth
DUPLEX CONTROLLER to logic LOG from microphone amplifier from loudspeaker amplifier LOG to logic
TSEN 28 (24) RTSEN CTSEN
TENV 27 (23)
TNOI 26 (22)
RSEN 25 (21) RRSEN
RENV 24 (20)
RNOI 23 (19)
CTENV
CTNOI
CRSEN
CRENV
CRNOI
MGD223
Fig.8 Signal and noise envelope detectors.
1996 Feb 09
10
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
handbook, full pagewidth
4 mV (RMS) 1 mV (RMS)
MBG354
INPUT SIGNAL
SIGNAL ENVELOPE A A: 85 dB/ms B: 0.7 dB/ms 36 mV B A B
NOISE ENVELOPE C B: 0.7 dB/ms C: 0.07 dB/ms 36 mV B C B
time
Fig.9 Signal and noise envelope waveforms.
g
16 IDT (12) DUPLEX CONTROLLER Vref 27 (23) TENV TNOI 26 (22) 13 mV
ATTENUATOR
LOGIC(1)
RIDT 14 SWT (11)
CSWT X X 1 13 mV X 0 X 0 1 0 0 X 0 0 X 1 X 1 0 0 1 X X - 10 A + 10 A + 10 A
24 (20) RENV RNOI 23 (19)
19 (15) MUTET
Vdt
from dynamic limiter
MGD224
(1) When MUTET = HIGH, +10 A is forced. When DLC/MUTER < 0.2 V, -10 A is forced.
Fig.10 Decision logic.
1996 Feb 09
11
Philips Semiconductors
Product specification
Hands-free IC
To determine the noise level, the signal on TENV and RENV are buffered to TNOI and RNOI. These buffers have a maximum source current of 1 A and a maximum sink current of 120 A. Together with the capacitors CTNOI and CRNOI, the timing can be set. In the basic application of Fig.16, the value of both capacitors is 4.7 F. At room temperature, the 1 A sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 dB/ms. This is small enough to track background noise and not to be influenced by speech bursts. The 120 A current that is sunk corresponds to a maximum fall-slope of approximately 8.5 dB/ms. However, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 dB/ms. The behaviour of the signal envelope and noise envelope monitors is illustrated in Fig.9. DECISION LOGIC: PINS IDT AND SWT The TEA1093 selects its mode of operation (transmit, receive or idle mode) by comparing the signal and the noise envelopes of both channels. This is executed by the decision logic. The resulting voltage on pin SWT is the input for the voice-switch. To facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 dB above the noise envelope. At room temperature, this is equal to a voltage difference VENV-VNOI = 13 mV. This so called speech/noise threshold is implemented in both channels. The signal on MIC contains both speech and the signal coming from the loudspeaker (acoustic coupling). When receiving, the contribution from the loudspeaker overrules the speech. As a result, the signal envelope on TENV is formed mainly by the loudspeaker signal. To correct this, an attenuator is connected between TENV and the TENV/RENV comparator. Its attenuation equals that applied to the microphone amplifier. When a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. This would cause the TEA1093 to go into the idle mode and the user of the set would hear the dial tone fade away. To prevent this, a dial tone detector is incorporated which, in standard applications, does not consider input signals between RIN1 and RIN2 as noise when they have a level greater than 127 mV (RMS). This level is proportional to RRSEN.
TEA1093
As can be seen from Fig.10, the output of the decision logic is a current source. The logic table gives the relationship between the inputs and the value of the current source. It can charge or discharge the capacitor CSWT with a current of 10 A (switch-over). If the current is zero, the voltage on SWT becomes equal to the voltage on IDT via the high-ohmic resistor RIDT (idling). The resulting voltage difference between SWT and IDT determines the mode of the TEA1093 and can vary between -400 mV and +400 mV. Table 1 Modes of TEA1093 MODE transmit mode idle mode receive mode
VSWT - VIDT (mV) <-180 0 >+180
The switch-over timing can be set with CSWT, the idle mode timing with CSWT and RIDT. In the basic application given in Fig.16, CSWT is 220 nF and RIDT is 2.2 M. This enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mV swing on SWT). The switch-over time from idle mode to transmit mode or receive mode is approximately 4 ms (180 mV swing on SWT). The switch over, from receive mode or transmit mode to idle mode, is equal to 4 x RIDT x CSWT and is approximately 2 seconds (idle mode time). The inputs MUTET and DLC/MUTER overrule the decision logic. When MUTET goes HIGH, the capacitor CSWT is charged with 10 A thus resulting in the receive mode. When the voltage on pin DLC/MUTER goes lower than 0.2 V, the capacitor is discharged with 10 A thus resulting in the transmit mode. VOICE-SWITCH: PINS STAB AND SWR A diagram of the voice-switch is illustrated in Fig.11. With the voltage on SWT, the TEA1093 voice-switch regulates the gains of the transmit and the receive channel so that the sum of both is kept constant.
1996 Feb 09
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Philips Semiconductors
Product specification
Hands-free IC
TEA1093
In the transmit mode, the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. In the receive mode, the opposite applies. In the idle mode, both microphone and loudspeaker amplifier gains are halfway. The difference between maximum and minimum is the so called switching range. This range is determined by the ratio of RSWR and RSTAB and is adjustable between 0 and 52 dB. RSTAB should be 3.65 k and sets an internally used reference current. In the basic application diagram given in Fig.16, RSWR is 365 k which results in a switching range of 40 dB. The switch-over behaviour is illustrated in Fig.12. In the receive mode, the gain of the loudspeaker amplifier can be reduced using the volume control. Since the voice-switch keeps the sum of the gains constant, the gain of the microphone amplifier is increased at the same time (see dashed curves in Fig.12). In the transmit mode, however, the volume control has no influence on the gain of the microphone amplifier or the gain of the loudspeaker amplifier. Consequently, the switching range is reduced when the volume is reduced. At maximum reduction of volume, the switching range becomes 0 dB.
DUPLEX CONTROLLER to microphone amplifier
from SWT
Gvtx + Gvrx = C(1) VOICE SWITCH
13 R STAB STAB (10) SWR 12 (9) RSWR
from volume control
to loudspeaker amplifier
MGD225
(1) c - constant.
Fig.11 Voice-switch.
handbook, halfpage
idle mode
MBG351
Tx mode Gvtx, Gvrx (10 dB/div)
Rx mode RVOL () 5700 3800 1900 0 0 1900 3800 5700
Gvtx
Gvrx -400 -200 0 +200 +400
VSWT - VIDT (mV)
Fig.12 Switch-over behaviour.
1996 Feb 09
13
Philips Semiconductors
Product specification
Hands-free IC
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vn(max) VRINmax VBBmax VSREFmax VSUPmax ISUPmax Ptot PARAMETER maximum voltage on all pins; except pins SUP, SREF, VBB, RIN1 and RIN2 maximum voltage on pin RIN1 or RIN2 maximum voltage on pin VBB maximum voltage on pin SREF maximum voltage on pin SUP maximum current on pin SUP total power dissipation TEA1093 TEA1093T Tstg Tamb HANDLING storage temperature operating ambient temperature see also Figs 13 and 14 see also Figs 13 and 14; Tamb = 75 C CONDITIONS MIN.
TEA1093
MAX.
UNIT V V V V mA mW mW C C
VGND - 0.4 V VBB + 0.4 V VGND - 1.2 V VBB + 0.4 V VGND - 0.4 V 12.0 VGND - 0.4 V 12.0 - - - -40 -25 140 910 670 +125 +75
VGND - 0.4 V VSUP + 0.4 V V
ESD in accordance with MIL STD883C; Method 3015 (HBM 1500 , 100 pF); 3 pulses positive and 3 pulses negative on each pin referenced to ground. Class 2: 2000 to 3999 V. THERMAL CHARACTERISTICS SYMBOL Rth j-a TEA1093 TEA1093T PARAMETER thermal resistance from junction to ambient in free air 55 75 K/W K/W VALUE UNIT
1996 Feb 09
14
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
MGD227 MGD226
handbook, halfpage
150 ISUP (mA)
handbook, halfpage
150
ISUP (mA)
130
(1)
130
(1)
(2)
110
(2) (3)
110
(3)
90 90
(4) (5) (4)
70 70 50 50 4 6 8 10 12 VSUP (V) (1) (2) (3) (4) (5) (6) 4 6 8 10 12 VSUP (V)
(6)
(1) (2) (3) (4)
Tamb = 45 C; Ptot = 1.45 W. Tamb = 55 C; Ptot = 1.27 W. Tamb = 65 C; Ptot = 1.09 W. Tamb = 75 C; Ptot = 0.91 W.
Tamb = 25 C; Ptot = 1.33 W. Tamb = 35 C; Ptot = 1.20 W. Tamb = 45 C; Ptot = 1.07 W. Tamb = 55 C; Ptot = 0.93 W. Tamb = 65 C; Ptot = 0.80 W. Tamb = 75 C; Ptot = 0.67 W.
Fig.13 TEA1093 safe operating area.
Fig.14 TEA1093T safe operating area.
1996 Feb 09
15
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
CHARACTERISTICS VSREF = 4.2 V; VGND = 0 V; ISUP = 15 mA; VSUP = 0 V (RMS); f = 1 kHz; Tamb = 25 C; PD = LOW; MUTET = LOW; RL = 50 ; RVOL = 0 ; measured in test circuit of Fig.15; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply (VA, SREF, SUP, VBB, GND and PD) VBB VBB(ISUP) VBB(T) VBB(RVA) stabilized supply voltage VBB variation with ISUP VBB variation with temperature referenced to 25 C VBB adjustment with RVA ISUP = 15 to 140 mA Tamb = -25 to + 75 C between VA and VBB; RVA = 180 k 3.35 - - - 3.6 20 20 3.2 4.5 3.85 - - - - V mV mV V V
between VA and GND; - VSREF = 4.9 V; RVA = 56 k ISUP(min) VSUP - VBB minimum operating current minimum DC voltage drop between pin SUP and VBB total harmonic distortion of AC signal on SUP VSUP = 1 V (RMS) - 0.4 275 -
5.5 - 315 0.5
7.0 - 355 -
mA V mV %
VSUP - VSREF internal reference voltage THD
Power-Down input PD VIL VIH IPD ISUP(PD) IBB(PD) LOW level input voltage HIGH level input voltage input current in power-down condition current consumption from pin SUP in power-down condition current consumption from pin VBB in power-down condition PD = HIGH PD = HIGH; VSUP = 4.5 V PD = HIGH; VBB = 3.6 V VGND - 0.4 V - 1.5 - - - - 2.5 55 400 0.3 VBB + 0.4 V 5.0 75 550 V V A A A
1996 Feb 09
16
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Microphone channel (MIC, GAT, MOUT, MUTET and MICGND) MICROPHONE AMPLIFIER Zi Gvtx Gvtxr GvtxT input impedance between pin MIC and MICGND voltage gain from pin MIC to MOUT in transmit mode voltage gain adjustment with RGAT voltage gain variation with temperature referenced to 25 C voltage gain variation with frequency referenced to 1 kHz noise output voltage at pin MOUT VMIC = 1 mV (RMS); Tamb = -25 to +75 C VMIC = 1 mV (RMS); f = 300 to 3400 Hz pin MIC connected to MICGND through 200 in series with 10 F; psophometrically weighted (P53 curve) VMIC = 1 mV (RMS) 17 12.5 -10 - 20 15 - 0.3 23 17.5 +10 - k dB dB dB
Gvtxf Vnotx
- -
0.3
-
dB dBmp
-100 -
TRANSMIT MUTE INPUT MUTET VIL VIH IMUTET Gvtxm LOW level input voltage HIGH level input voltage input current voltage gain reduction with MUTET active MUTET = HIGH MUTET = HIGH VGND - 0.4 V - 1.5 - - - 2.5 80 0.3 VBB + 0.4 V 5 - V V A dB
Loudspeaker channel (RIN1, RIN2, GAR, LSP1, LSP2 and DLC/MUTER) LOUDSPEAKER AMPLIFIER Zi input impedance between pins RIN1 or RIN2 and GND between pins RIN1 and RIN2 Gvrx voltage gain in receive mode the difference between RIN1 and RIN2 to the difference between LSP1 and LSP2, bridge-tied load the difference between RIN1 and RIN2 to LSP1 or LSP2, single-ended load Gvrxr GvrxT voltage gain adjustment with RGAR voltage gain variation with temperature referenced to 25 C VRIN = 20 mV (RMS); Tamb = -25 to +75 C VRIN = 20 mV (RMS) 21.5 24 26.5 dB 17 34 20 40 23 46 k k
15.5
18
20.5
dB
-15 -
- 0.3
+15 -
dB dB
1996 Feb 09
17
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
SYMBOL Gvrxf VRIN(rms)
PARAMETER voltage gain variation with frequency referenced to 1 kHz maximum input voltage between RIN1 and RIN2 (RMS value) noise output voltage at pin LSP1 or LSP2 (RMS value)
CONDITIONS VRIN = 20 mV (RMS); f = 300 to 3400 Hz -
MIN.
TYP. 0.3 390 - -
MAX.
UNIT dB mV
for 2% THD in input - stage; RGAR = 11.8 k inputs RIN1 and RIN2 short-circuited through 200 in series with 10 F; psophometrically weighted (P53 curve) when total attenuation does not exceed the switching range -
Vnorx(rms)
80
-
V
CMRR Gvrxv
common mode rejection ratio voltage gain variation related to RVOL = 950
- -
50 3
- -
dB dB
OUTPUT CAPABILITY VOSE(p-p) single-ended load (peak-to-peak value) VRIN = 150 mV (RMS); 1.2 ISUP = 11 mA; note 1 VRIN = 150 mV (RMS); 2.5 ISUP = 16.5 mA; note 2 VOBTL(p-p) bridge-tied load (peak-to-peak value) VRIN = 150 mV (RMS); 2.5 ISUP = 27 mA; note 2 VRIN = 150 mV (RMS); 3.5 ISUP = 35 mA; note 3 VRIN = 150 mV (RMS); - ISUP = 62 mA; RL = 33 ; note 4 IOM(max) maximum output current at LSP1 or LSP2 (peak value) 150 1.45 2.9 - - V V
2.9 4.0 5.15
- - -
V V V
300
-
mA
DYNAMIC LIMITER tatt trel THD VBB(th) tatt attack time when VRIN jumps from 20 mV to 20 mV + 10 dB release time when VRIN jumps from 20 mV + 10 dB to 20 mV total harmonic distortion at VRIN = 20 mV + 10 dB VBB limiter threshold attack time when VBB jumps below VBB(th) RGAR = 374 k; ISUP = 20 mA RGAR = 374 k; ISUP = 20 mA RGAR = 374 k; ISUP = 20 mA; t > tatt - - - - - - 250 0.9 2.75 1 5 - 5 - - ms ms % V ms
1996 Feb 09
18
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
SYMBOL MUTE RECEIVE VDLC(th)
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
threshold voltage required on pin DLC/MUTER to obtain mute receive condition threshold current sourced by pin VDLC = 0.2 V DLC/MUTER in mute receive condition voltage gain reduction in mute receive condition VDLC < 0.2 V
VGND - 0.4 V -
0.2
V
IDLC(th)
-
80
-
A
Gvrxm
-
80
-
dB
Envelope and noise detectors (TSEN, TENV, RSEN and RENV) PREAMPLIFIERS Gv(TSEN) Gv(RSEN) voltage gain from MIC to TSEN voltage gain between RIN1 and RIN2 to RSEN. ITSEN = 0.8 to 160 A 38 -2 40 0 42 +2 dB dB
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT Vdet(TSEN) sensitivity detection on pin TSEN; voltage change on pin TENV when doubling the current from TSEN sensitivity detection on pin RSEN; voltage change on pin RENV when doubling the current from RSEN - 18 - mV
Vdet(RSEN)
IRSEN = 0.8 to 160 A
-
18
-
mV
SIGNAL ENVELOPE DETECTORS Isource(ENV) Isink(ENV) VENV maximum current sourced from pin TENV or RENV maximum current sunk by pin TENV or RENV voltage difference between pin RENV and TENV when 10 A is sourced from both RSEN and TSEN; envelope detectors tracking; note 5 - 0.75 - 120 1 3 - 1.25 - A A mV
NOISE ENVELOPE DETECTORS Isource(NOI) Isink(NOI) VNOI maximum current sourced from pin TNOI or RNOI maximum current sunk by pin TNOI or RNOI voltage difference between pin RNOI and TNOI 0.75 - when 5 A is sourced - from both RSEN and TSEN; noise detectors tracking; note 5 1 120 3 1.25 - - A A mV
1996 Feb 09
19
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
SYMBOL DIAL TONE DETECTOR VRINDT(rms)
PARAMETER
CONDITIONS -
MIN.
TYP. -
MAX.
UNIT
threshold level at pin RIN1 and RIN2 (RMS value)
127
mV
Decision logic (IDT and SWT) SIGNAL RECOGNITION VSrx(th) threshold voltage between pin RENV and RNOI to switch-over from receive to idle mode threshold voltage between pin TENV and TNOI to switch-over from transmit to idle mode VRIN < VRINDT; note 6 - 13 - mV
VStx(th)
note 6
-
13
-
mV
SWITCH-OVER Isource(SWT) Isink(SWT) Iidle(SWT) current sourced from pin SWT when switching to receive mode current sunk by pin SWT when switching to transmit mode current sourced from pin SWT in idle mode 7.5 7.5 - 10 10 0 12.5 12.5 - A A A
Voice switch (STAB and SWR) SWRA SWRA |Gv| switching range switching range adjustment with RSWR referenced to 365 k voltage gain variation from transmit mode to idle mode on both channels gain tracking (Gvtx + Gvrx) during switching, referenced to idle mode - -40 - 40 - 20 - 12 - dB dB dB
Gtr
-
0.5
-
dB
Notes 1. Corresponds to 5 mW output power. 2. Corresponds to 20 mW output power. 3. Corresponds to 40 mW output power. 4. Corresponds to 100 mW output power. 5. Corresponds to 1 dB tracking. 6. Corresponds to 4.3 dB noise/speech recognition level.
1996 Feb 09
20
handbook, full pagewidth
1996 Feb 09
ISUP RSREF 100 7 SREF VSREF 4.2 V RGAT 30.1 k 21 CRIN1 220 nF CRIN2 220 nF GAR 18 8 MICGND GND RSEN VRIN1 25 RRSEN 10 k CRSEN 100 nF CRENV 470 nF CRNOI 4.7 F RENV 24 RNOI 23 TSEN 28 RTSEN 10 k CTSEN 100 nF CTENV 470 nF CTNOI 4.7 F CDLC 470 nF
MGD228
Philips Semiconductors
Hands-free IC
CSWT 220 nF RIDT 2.2 M 9 SUP 19 MUTET 17 PD 16 IDT 14 SWT RSTAB 3.65 k 13 STAB RSWR 365 k 12 SWR VA 15 RVA
20
MOUT CVBB 470 F CMIC 220 nF VMIC
GAT RIN1
VBB 10
2
TEA1093
3 RIN2
MIC LSP2
22 4 5
21
RGAR 66.5 k LSP1 TENV 27 TNOI DLC/MUTER 26 1 VOL 11 RVOL 6 CLSP1 47 F RL
50
Product specification
TEA1093
Fig.15 Test circuit.
handbook, full pagewidth
1996 Feb 09
CSTAB 4.7 nF CSWT 220 nF RIDT 2.2 M 7 VCC LN C7 MIC - 100 nF C8 MIC + line 100 nF C1 100 F QR + CGAT RGAT 30.1 k 21 CRIN1 100 nF 2 GAT MIC RIN1 CSREF 4.7 nF 20 SREF 9 SUP 19 MUTET 17 PD 16 IDT 14 SWT RSTAB 3.65 k 13 STAB RSWR 365 k 12 SWR VA MOUT VBB 15 10 CVBB 470 F CMIC 100 nF RMIC R1 620 RSREF 100 from microcontroller 22 4 5 RGAR 66.5 k 6
APPLICATION INFORMATION
Philips Semiconductors
Hands-free IC
TEA1093
LSP2 GAR
22
TEA106X
CRIN2 100 nF
3 18
RIN2 MICGND
8 VEE
GND LSP1 RSEN 25 RRSEN 10 k CRSEN 100 nF RENV 24 RNOI 23 TSEN 28 RTSEN 10 k CTSEN 100 nF TENV 27 TNOI DLC/MUTER 1 26 VOL 11
SLPE
R9 20
CLSP1 47 F LSP 50
MGD229
CRENV 470 nF
CRNOI 4.7 F
CTENV 470 nF
CTNOI 4.7 F
CDLC 470 nF
RVOL
Product specification
TEA1093
Fig.16 Basic application diagram.
handbook, full pagewidth
1996 Feb 09
CSTAB R1 620 RSREF 4.7 nF 390 100 F from microcontroller 7 9 SREF SUP 19 17 MUTET PD VBB 20 C7b 100 nF C8 MICROCONTROLLER DP DTMF DTMF MIC+ 100 nF QR+ CRIN1 2 RIN1 MIC 22 MOUT CMIC 10 100 C1 100 F tip VCC LN S1 C7a 100 nF CSREF 4.7 nF CVBB 470 F RMIC MIC-
Philips Semiconductors
Hands-free IC
TEA106X
100 nF
TEA1093
100 nF CRIN2 3 10 F ring 100 nF 18 8 VEE
23
SLPE S2 R9 20 interrupter
RIN2
MICGND GND LSP1 6
CLSP1
LSP 50
MGD230
Product specification
TEA1093
Fig.17 Application proposal.
Philips Semiconductors
Product specification
Hands-free IC
PACKAGE OUTLINES
handbook, plastic dual in-line package; 28 leads (600 mil) DIP28: full pagewidth
TEA1093
SOT117-1
seating plane
D
ME
A2
A
L
A1 c Z e b1 b 28 15 MH wM (e 1)
pin 1 index E
1
14
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT117-1 REFERENCES IEC 051G05 JEDEC MO-015AH EIAJ EUROPEAN PROJECTION A max. 5.1 0.20 A1 min. 0.51 0.020 A2 max. 4.0 0.16 b 1.7 1.3 0.066 0.051 b1 0.53 0.38 0.020 0.014 c 0.32 0.23 0.013 0.009 D (1) 36.0 35.0 1.41 1.34 E (1) 14.1 13.7 0.56 0.54 e 2.54 0.10 e1 15.24 0.60 L 3.9 3.4 0.15 0.13 ME 15.80 15.24 0.62 0.60 MH 17.15 15.90 0.68 0.63 w 0.25 0.01 Z (1) max. 1.7 0.067
ISSUE DATE 92-11-17 95-01-14
1996 Feb 09
24
Philips Semiconductors
Product specification
Hands-free IC
TEA1093
SO28: plastic small outline package; 28 leads; body width 7.5 mm
SOT136-1
D
E
A X
c y HE vMA
Z 28 15
Q A2 A1 pin 1 index Lp L 1 e bp 14 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 18.1 17.7 0.71 0.69 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT136-1 REFERENCES IEC 075E06 JEDEC MS-013AE EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
1996 Feb 09
25
Philips Semiconductors
Product specification
Hands-free IC
SOLDERING Plastic dual in-line packages BY DIP OR WAVE The maximum permissible temperature of the solder is 260 C; this temperature must not be in contact with the joint for more than 5 s. The total contact time of successive solder waves must not exceed 5 s. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified storage maximum. If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply the soldering iron below the seating plane (or not more than 2 mm above it). If its temperature is below 300 C, it must not be in contact for more than 10 s; if between 300 and 400 C, for not more than 5 s. Plastic small outline packages BY WAVE During placement and before soldering, the component must be fixed with a droplet of adhesive. After curing the adhesive, the component can be soldered. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder bath is 10 s, if allowed to cool to less than 150 C within 6 s. Typical dwell time is 4 s at 250 C. A modified wave soldering technique is recommended using two solder waves (dual-wave), in which a turbulent wave with high upward pressure is followed by a smooth laminar wave. Using a mildly-activated flux eliminates the need for removal of corrosive residues in most applications. BY SOLDER PASTE REFLOW
TEA1093
Reflow soldering requires the solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the substrate by screen printing, stencilling or pressure-syringe dispensing before device placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt, infrared, and vapour-phase reflow. Dwell times vary between 50 and 300 s according to method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 min. at 45 C. REPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING
IRON OR PULSE-HEATED SOLDER TOOL)
Fix the component by first soldering two, diagonally opposite, end pins. Apply the heating tool to the flat part of the pin only. Contact time must be limited to 10 s at up to 300 C. When using proper tools, all other pins can be soldered in one operation within 2 to 5 s at between 270 and 320 C. (Pulse-heated soldering is not recommended for SO packages.) For pulse-heated solder tool (resistance) soldering of VSO packages, solder is applied to the substrate by dipping or by an extra thick tin/lead plating before package placement.
1996 Feb 09
26
Philips Semiconductors
Product specification
Hands-free IC
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1093
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Feb 09
27
Philips Semiconductors - a worldwide company
Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. (31)40-2788399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (45)32 88 26 36, Fax. (45)31 57 19 49 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358)0-615 800, Fax. (358)0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040)23 53 60, Fax. (040)23 53 63 00 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 240 India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01)7640 000, Fax. (01)7640 200 Italy: PHILIPS SEMICONDUCTORS S.r.l., Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5130, Fax. (03)3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040)2783749, Fax. (040)2788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Rua dr. Antonio Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430, Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494 Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01)488 2211, Fax. (01)481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0 212)279 27 70, Fax. (0212)282 67 07 Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-2724825 SCDS47 (c) Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417021/1100/03/pp28 Document order number: Date of release: 1996 Feb 09 9397 750 00634

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