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| NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is Designed for B PACKAGE STYLE .400 BAL FLG(A) A FULL R 4X.060 R FEATURES: * Input Matching Network * * OmnigoldTM Metalization System C E D P F H K J G I N LM MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG JC O DIM A B MINIMUM inches / mm MAXIMUM inches / mm 43.2 A 65 V 65 V 3.5 V 1167 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 0.15 OC/W O O .210 / 5.33 .045 / 1.14 .125 / 3.18 .380 / 9.65 .770 / 19.56 .070 / 1.78 .215 / 5.46 .420 / 10.67 .645 / 16.38 .895 / 22.73 .002 / 0.05 .058 / 1.47 .115 / 2.92 .230 / 5.84 .055 / 1.40 .135 / 3.43 .390 / 9.91 .830 / 21.08 .080 / 2.03 .235 / 5.97 .430 / 10.92 .655 / 16.64 .905 / 22.99 .006 / 0.15 .065 / 1.65 .130 / 3.30 .230 / 5.84 C D E F G H I J K L M N P .395 / 10.03 .405 / 10.29 ORDER CODE: ASI10687 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE IC = 50 mA IC = 50 mA IE = 10 mA VCE = 30 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 3.5 15 UNITS V V V mA --- VCE = 5.0 V IC = 5.0 A 20 200 PG C VCE = 40 V PIN = 54 W f = 425 MHz 9.7 50 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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