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BBY51...
Silicon Tuning Diode * High Q hyperabrupt tuning diode * Designed for low tuning voltage operation * For VCO's in mobile communications equipment
BBY51
BBY51-02L BBY51-02W BBY51-03W
3
D1
D2
1
2
1
2
Type BBY51 BBY51-02L* BBY51-02W BBY51-03W
Package SOT23 TSLP-2-1 SCD80 SOD323
Configuration common cathode single, leadless single single
LS(nH) 2 0.4 0.6 1.8
Marking S3s II II H
* Preliminary
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 7 20 -55 ... 125 -55 ... 150 Unit V mA C
1
Dec-15-2003
BBY51...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 6 V VR = 6 V, T A = 85 C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 200
pF 5.05 3.4 2.7 2.5 5.4 4.2 3.5 3.1 1.75 1.78 0.5 0.37 5.75 5.2 4.6 3.7 2.2 2.2 0.7
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
CT1/C T4 C1V-C 3V C3V-C 4V rS
1.55 1.4 0.3 -
Capacitance difference
VR = 1 V, f = 1 MHz, VR = 4 V
pF
Capacitance difference
VR = 3 V, f = 1 MHz, VR = 4 V
Series resistance
VR = 1 V, f = 1 GHz
2
Dec-15-2003
BBY51...
Diode capacitance CT = (VR)
f = 1MHz
EHD07128
Temperature coefficient of the diode capacitance TCc = (VR)
10 -3
10 CT pF 8
1/C
6
TCc
10 -4 10 -5 1
4
2
0
0
2
4
V VR
6
2
3
4
5
6
V
8
VR
3
Dec-15-2003

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