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| SMA5103 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT N channel 60 20 5 10 (PW1ms) 2 N-channel + P-channel H-bridge (Ta=25C) External dimensions B *** SMA Ratings P channel -60 20 4 8 (PW1ms) -- Unit V V A A mJ W W C/W C/W C C 4 (Ta=25C, with all circuits operating, without heatsink) 28 (Tc=25C,with all circuits operating, with infinite heatsink) 31.2 (Junction-Air, Ta=25C, with all circuits operating) 4.46 (Junction-Case, Tc=25C, with all circuits operating) 150 -40 to +150 j-a j-c Tch Tstg * : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 10 7 8 11 2 9 4 Pch 12 Nch 1 3 6 5 Characteristic curves ID-VDS Characteristics (Typical) N-ch 10 10V 7V ID-VGS Characteristics (Typical) P-ch -10V -8 10 N-ch (VDS=10V) 8 -6 8 ID (A) ID (A) -4 ID (A) 6 6V -7V 6 4 -6V 4 TC=-40C 25C VGS=-4V -2 2 VGS=4V 2 -5V 125C 0 0 0 2 4 6 8 10 0 -2 -4 -6 -8 -10 0 0 2 4 6 8 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.20 (VGS=10V) P-ch 0.6 (VGS=-10V) -8 P-ch TC=-40C (VDS=-10V) 0.5 25C 0.15 -6 125C () () 0.4 ID (A) (ON) (ON) 0.10 0.3 -4 RDS RDS 0.2 0.05 0.1 -2 0 0 2 4 6 8 10 0 0 -2 -4 -6 -8 00 -2 -4 -6 -8 -10 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 0.3 ID=5A VGS=10V P-ch 1.0 ID=-4A VGS=-10V 0.8 () 0.2 () RDS (ON) 0.6 RDS (ON) 0.4 0.1 0.2 0 -40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) 100 SMA5103 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr 2.0 2.2 3.3 0.17 300 160 35 35 1.1 140 1.5 0.22 60 500 250 4.0 Specification typ max Unit V nA Conditions ID=250A, VGS=0V VGS=20V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 30V, VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=100mA -2.0 1.6 2.2 0.38 270 170 60 60 -4.4 150 -5.5 0.55 Specification min -60 500 -250 -4.0 typ max P channel Unit V nA Conditions ID=-250A, VGS=0V VGS= 20V VDS=-60V, VGS=0V VDS=-10V, ID=-250A VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, VDD -30V, VGS=-10V, see Fig. 4 on page 16. ISD=-4A, VGS=0V ISD= 100mA (Ta=25C) A V S pF pF ns ns V ns A V S pF pF ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10 Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch 20 ID (pulse) max (TC=25C) 10 1m m s (1 sh 0 s 5 10 5 5 M LI IT ED 10 s Re(yfs) (S) Re (yfs) (S) ID (A) R D S (O N ) ot ) 1 TC=-40C 25C 1 0.5 1 TC=-40C 25C 125C 125C 0.5 0.5 0.3 0.08 0.3 -0.1 0.5 1 5 10 -0.5 -1 -5 -8 0.1 0.5 1 5 10 50 100 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch 700 500 VGS=0V f=1MHz P-ch -10 ID (pulse) max (TC=25C) 10 0 500 Ciss -5 ED s 1m s Capacitance (pF) Capacitance (pF) LI M IT Ciss Coss (O N) 10 m s (1 o sh S Coss t) ID (A) 100 100 -1 50 Crss 50 -0.5 Crss 10 0 10 20 30 40 50 10 0 -10 -20 -30 -40 -50 -0.1 -0.5 RD -1 -5 -10 -50 -100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 10 -8 PT-Ta Characteristics P-ch 30 With Silicone Grease Natural Cooling All Circuits Operating 8 -6 25 20 IDR (A) PT (W) IDR (A) 6 10V -10V W ith In -4 15 fin ite He 4 10 VGS=0V -5V VGS=0V at sin k 2 5V -2 5 Without Heatsink 0 0 0 0.5 1.0 1.5 0 0 -1 -2 -3 -4 -5 0 50 100 150 VSD (V) VSD (V) Ta (C) 101 |
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