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| BGA 427 Si-MMIC-Amplifier in SIEGET(R) 25-Technologie Preliminary data * Cascadable 50 -gain block * Unconditionally stable * Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA) * Noise figure NF = 2.2 dB at 1.8 GHz * typical device voltage VD = 2 V to 5 V * Reverse isolation < 35 dB (appl.2) 4 3 4 2 1 VPS05605 3 +V OUT Circuit Diagram IN 1 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA 427 Parameter Marking Ordering Code BMs Q62702-G0067 Pin Configuration 1, IN 2, GND Symbol Package 3, +V 4, Out Value 25 6 150 -10 150 -65 ...+150 -65 ...+150 SOT-343 Unit mA V mW dBm C Maximum Ratings Device current Device voltage Total power dissipation, T S tbd C ID VD,+V Ptot PRFin Tj TA T stg 1) RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS tbd K/W 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50W, Testfixture Appl..1 Insertion power gain |S21| 2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz S12 typ. max. dB 27 22 28.5 22 - Unit NF 1.9 2 2.2 +7 >12 >9 dBm dB IP 3out RL in RL out - Typical configuration Appl.1 +V 100 pF RF OUT 1 nF BGA 427 100 pF RF IN Appl.2 +V 10 nF 2.2 pF 100 nH 100 pF 100 pF RF OUT GND EHA07379 BGA 427 100 pF RF IN GND EHA07380 Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path! (appl.1) 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -11-1998 BGA 427 S-Parameters at TA = 25 C, (Testfixture, Appl.1) f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG 0.1 0.2 0.5 0.8 0.9 1 1.5 1.8 1.9 2 2.5 3 0.1382 0.1179 0.1697 0.1824 0.1782 0.176 0.1827 0.1969 0.2021 0.2116 0.2437 0.258 -38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 BGA 427-chip including parasitics +V 13 R2 T2 R1 R3 C'-E'Diode 14 OUT IN 11 C1 T1 C P3 C P4 C P5 R4 C P1 C P2 12 GND EHA07381 T1 T2 R1 R2 R3 R4 C1 CP1 CP2 CP3 CP4 T501 T501 14.5k 280 2.4k 170 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF 0.1pF CP5 C'-E'-diode T1 Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -11-1998 BGA 427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 aA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA mA V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 - RS = 20 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: L2 OUT C1 C2 L BO IN C CB L1 14 C3 L BI 11 BGA 427 Chip 12 13 L CI L CO +V C BE L EI C'-E'Diode C CE L EO GND EHA07382 LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH Valid up to 3GHz Extracted on behalf of SIEMENS Small Signal Semiconductors by Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Au 1998-11-01 -11-1998 BGA 427 Insertion power gain |S 21| 2 = f (f) Noise figure NF = f (f) VD, I D = parameter 35 VD,ID = parameter 5.0 dB VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA dB 4.0 3.5 |S 21|2 25 VD=5V, ID=17.5mA VD=3V, ID=9.5mA NF 0 1 20 3.0 2.5 15 2.0 1.5 1.0 10 5 0.5 0 -1 10 0.0 -1 10 0 1 10 GHz 10 10 GHz 10 f f Intercept point at the output IP 3out = f (f) VD,ID = parameter 25 dBm IP3out VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA 15 10 5 0 -1 10 10 0 GHz 10 1 f Semiconductor Group Semiconductor Group 55 Au 1998-11-01 -11-1998 |
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