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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1120
Features
* High Dynamic Range Cascadable 50 or 75 Gain Block * 3 dB Bandwidth: 50 MHz to 1.6 GHz * 17.5 dBm Typical P1 dB at 0.5 GHz * 12 dB Typical 50 Gain at 0.5 GHz * 3.5 dB Typical Noise Figure at 0.5 GHz * Hermetic Metal/Beryllia Microstrip Package
disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
200 mil BeO Package
Description
The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO
Typical Biasing Configuration
R bias VCC > 8 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5.5 V
2
5965-9559E
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MSA-1120 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 60C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 16.7 mW/C for TC > 161C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 60 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 1.0 GHz
Units
dB dB GHz
Min.
11.5
Typ.
12.5 0.7 1.6 1.7:1 1.9:1
Max.
13.5 1.0
dB dBm dBm psec V mV/C 4.5 16.0
3.5 17.5 30.0 200 5.5 -8.0
4.5
6.5
Notes: 1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P).
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MSA-1120 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 60 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
.0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000
.78 .19 .05 .04 .04 .05 .07 .09 .10 .12 .14 .15 .17 .19 .25 .31 .35 .40
-21 -72 -56 -52 -56 -72 -84 -96 -105 -113 -120 -127 -134 -140 -167 171 157 140
19.6 13.8 12.9 12.5 12.5 12.4 12.4 12.3 12.1 12.0 11.8 11.6 11.4 11.1 9.8 8.4 7.3 6.1
9.53 4.91 4.44 4.23 4.22 4.19 4.15 4.10 4.04 3.98 3.89 3.80 3.71 3.60 3.10 2.64 2.31 2.02
168 165 174 174 172 165 158 151 144 137 131 124 118 112 83 58 39 19
-25.1 -16.8 -16.5 -16.1 -16.2 -16.1 -16.0 -15.9 -15.8 -15.6 -15.4 -15.2 -15.0 -14.8 -14.0 -13.3 -12.8 -12.5
.057 .144 .149 .156 .155 .157 .159 .161 .163 .166 .169 .173 .178 .181 .200 .216 .228 .236
50 11 3 2 1 1 2 2 3 3 2 2 1 2 -3 -10 -16 -23
.79 .19 .06 .04 .04 .06 .09 .11 .13 .16 .18 .20 .22 .24 .31 .35 .36 .36
-21 -72 -75 -79 -78 -91 -101 -109 -117 -124 -130 -136 -142 -148 -174 163 148 134
0.51 0.98 1.08 1.08 1.09 1.08 1.07 1.06 1.05 1.04 1.03 1.01 1.00 0.99 0.95 0.95 0.96 0.99
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C, ZO = 50
(unless otherwise noted)
16 14 12 G p (dB) 10 8 6 4 20 2 0 .02 0 .05 0.1 0.5 1.0 2.0 3.0 0 2 4 Vd (V) 6 8 FREQUENCY (GHz) 4 20 40 60 I d (mA) 80 6 ZO = 50 100 TC = +125C TC = +25C 80 T = -55C C 60 Gp (dB) Id (mA) 14 0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz
12
ZO = 75
10 2.0 GHz
40
8
Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA.
P1 dB (dBm) 18 17 16
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
22 I d = 75 mA
5.0
20 P1 dB Gp (dB) 18 13 12 GP 11 P1 dB (dBm)
4.5 NF (dB) I d = 60 mA
4.0
16 3.5 I d = 40 mA 3.0 0.1
5 NF (dB) 4 3 -55 +25 TEMPERATURE (C) +125 NF
14
12 0.1
I d = 75 mA I d = 60 mA I d = 40 mA 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz)
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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200 mil BeO Package Dimensions
4 .300 .025 7.62 .64 45 1 RF INPUT NO REFERENCE GROUND .060 1.52 .048 .010 1.21 .25 2 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 3. Base of package is electrically isolated. .004 .002 .10 .05 GROUND .030 .76
.128 3.25
.205 5.21
.023 .57
Package marking code is "A11"
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