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| RB425D / RB421D Diodes Schottky barrier diode RB425D / RB421D !Applications Low power rectification !External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 0.80.1 1.6 0.4 +0.1 -0.05 0.15 !Construction Silicon epitaxial planar (All leads have the same dimensions) Marking RB425D : D3L RB421D : D3C ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Marking RB425D D3L RB421D D3C !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge curren Junction temperature Storage temperature 60Hz for 1 !Circuit Limits 40 40 0.1 1 125 -40~+125 Unit V V A A Symbol VRM VR IO IFSM Tj Tstg RB425D RB421D C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals Note) ESD sensitive product handling required. Symbol VF1 VF2 IR CT Min. - - - - Typ. - - - 6.0 Max. 0.55 0.34 30 - Unit V V A pF IF=100mA IF=10mA VR=10V Conditions VR=10V, f=1MHz 0.3~0.6 !Features 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. 2.80.2 +0.2 -0.1 0~0.1 +0.1 -0.06 RB425D / RB421D Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 10m Typ. pulse measurement Typ. pulse measurement Ta=125C 100 REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 100m 1m 10 Ta =1 25 C 75 C 25 C -2 5C 10m 100 75C 1m 10 25C 1 100 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) |
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