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SGW10N60RUFD
IGBT
SGW10N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G E
D2-PAK
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGW10N60RUFD 600 20 16 10 30 12 92 10 75 30 -55 to +150 -55 to +150 300
Units V V A A A A A us W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. ---Max. 1.6 2.5 40 Units C/W C/W C/W
Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material)
(c)2002 Fairchild Semiconductor Corporation
SGW10N60RUFD Rev. A1
SGW10N60RUFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V IC = 16A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---660 115 25 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----15 30 36 158 141 215 356 16 33 42 242 161 452 613 -30 5 8 7.5 --50 200 --500 --60 350 --860 -45 10 16 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH
VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 10A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 12A TC = 100C TC = 25C TC = 100C IF = 12A, di/dt = 200A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 42 60 3.5 5.6 80 220
Max. 1.7 -60 -6.0 -180 --
Units V ns A nC
(c)2002 Fairchild Semiconductor Corporation
SGW10N60RUFD Rev. A1
SGW10N60RUFD
40 35 Common Emitter TC = 25
30
20V 15V
25
12V
Collector Current, I C [A]
30 25 20 15 10 V GE = 10V
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 TC = 125 ------
20
15
10
5
5 0 0 2 4 6 8
0 1 10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
16 Common Emitter V GE = 15V 14 20A 12
VCC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
3.5
3.0
Load Current [A]
10 8 6 4
2.5 10A 2.0 IC = 5A
1.5
2 1.0 -50 0 50 100 150 0
Duty cycle : 50% T C = 100 Power Dissipation = 18W 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
16
16
12
12
8
8
4 IC = 5A 0 0 4 8
20A 10A
20A 4 IC = 5A 0 10A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGW10N60RUFD Rev. A1
SGW10N60RUFD
1400 Common Emitter V GE = 0V, f = 1MHz T C = 25 Common Emitter V CC = 300V, V GE = 15V IC = 10A T C = 25 T C = 125 -----100
1200
Ton
Capacitance [pF]
Switching Time [ns]
1000 Cies
800
Tr
600
400 Coes 200 Cres 0 1 10
10 10 100
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter VCC = 300V, V GE = 15V IC = 10A TC = 25 TC = 125 ------
1000 Toff Toff Tf
Common Emitter VCC = 300V, VGE = 15V IC = 10A TC = 25 TC = 125 -----Eoff Eon Eoff
Tf
Switching Loss [uJ]
100
100 10 100
10
100
Gate Resistance, R G [ ]
Gate Resistance, RG [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 20 T C = 25 T C = 125 -----Common Emitter VGE = 15V, RG = 20 TC = 25 TC = 125 -----Ton
Switching Time [ns]
100
Switching Time [ns]
Toff Tf Toff Tf 100
Tr
10 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGW10N60RUFD Rev. A1
SGW10N60RUFD
15 1000 Common Emitter VGE = 15V, RG = 20 TC = 25 TC = 125 ------
Gate - Emitter Voltage, VGE [ V ]
Common Emitter RL = 30 TC = 25 VCC = 100 V 300 V 200 V
12
Switching Loss [uJ]
9
Eoff
6
100 Eon
3
0 5 10 15 20 0 10 20 30
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed) 50us IC MAX. (Continuous)
50
Collector Current, I C [A]
10
100us 1
Collector Current, I C [A]
10
DC Operation
1 Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.1 0.1 1 10 100 1000
1
1
Safe Operating Area V GE = 20V, T C = 100 10 100 1000
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [/W]
1
0.5 0.2 0.1
0.1
0.05 0.02 0.01
Pdm t1 t2
0.01 single pulse 10
-5
Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGW10N60RUFD Rev. A1
SGW10N60RUFD
100 100 T C = 25 T C = 100 -----V R = 200V IF = 12A T C = 25 T C = 100 ------
Reverse Recovery Current, I rr [A]
Forward Current, I F [A]
10
10
1 0 1 2 3
1 100
1000
Forward Voltage Drop, VFM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
600
100 V R = 200V IF = 12A T C = 25 T C = 100 -----VR=200V IF=12A TC = 25 TC = 100 ------
Stored Recovery Charge, Qrr [nC]
400
Reverce Recovery Time, t rr [ns]
1000
500
80
60
300
40
200
100
20
0 100
0 100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGW10N60RUFD Rev. A1
SGW10N60RUFD
Package Dimension
D2-PAK
(0.40) 9.90 0.20 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10 0.15 2.54 0.30
SGW10N60RUFD Rev. A1
2.40 0.20
4.90 0.20
(0.75)
1.27 0.10 2.54 TYP
0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40)
0
~3
+0.10
0.50 -0.05
10.00 0.20 15.30 0.30
(1.75)
(7.20) 0.80 0.10 4.90 0.20
(2XR0.45)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation
9.20 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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