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| DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES * High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) * High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS PACKAGE DIMENSIONS in millimeters 2.8 0.2 0.4 +0.1 -0.05 1.5 0.65 +0.1 -0.15 0.95 Maximum Voltages and Current (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 C -55 to +150 C 200 mW 1.1 to 1.4 VCBO VCEO VEBO IC 60 50 5.0 100 V V V mA 2.9 0.2 2 3 0.95 Marking 0.3 0.16 +0.1 -0.06 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 1.0 mA* V V V MHz pF IC = 100 mA, IB = 10 mA* IC = 100 mA, IB = 10 mA* VCE = 6.0 V, IC = 1.0 mA* VCE = 6.0 V, IE = -10 mA VCB = 6.0 V, IE = 0, f = 1.0 MHz 0 to 0.1 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Base to Saturation Voltage Base Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob 0.55 90 200 0.15 0.86 0.62 250 3.0 MIN. TYP. MAX. 0.1 0.1 600 0.3 1.0 0.65 1: Emitter 2: Base 3: Collector UNIT A A * Pulsed: PW 350 s, Duty Cycle 2 % hFE Classification Marking hFE L4 90 to 180 L5 135 to 270 L6 200 to 400 L7 300 to 600 Document No. TC-1481C (O.D. No. TC-5172C) Date Published July 1995 P Printed in Japan (c) 0.4 +0.1 -0.05 1 1984 2SC1623 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 PT - Total Power Dissipation - mW 180 160 140 120 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 140 160 180 TA - Ambient Temperature - C Free air NORMALIZED COLLECTOR CUTOFF CURRENT vs. AMBIENT TEMPERATURE ICBO (TA) - Normalized Collector Cutottt Current ICBO (TA = 25 C) 10000 5000 2000 1000 500 200 100 50 20 10 5 2 1 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 45 40 IC - Collector Current - mA IC - Collector Current - mA 80 8 35 30 60 6 0.3 25 20 40 0.2 4 15 10 IB = 5.0 A 20 IB = 0.1 mA 0 0 0.4 0.8 1.2 1.6 VCE - Collector to Emitter Voltage - V 2.0 2 0 0 0 0 10 20 30 40 VCE - Collector to Emitter Voltage - V 50 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 6.0 V Pulsed 1000 hFE - DC Current Gain 500 300 100 50 30 10 5 3 0.1 0.2 hFE - DC Current Gain 1000 500 300 100 50 30 10 5 3 0.1 0.2 TA = 75 C 25 C -25 C VCE = 6.0 V 1.0 V 0.5 V 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 2 2SC1623 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 6.0 V 50 Pulsed 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) - Base Saturation Voltage - V VCE(cat) - Collector Saturation Voltage - V 100 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 IC - Collector Current - mA VCE(sat) VBE(sat) Pulsed IC = 50 * IB 20 10 IC - Collector Current - mA 75 C 25 C TA = -25 C IC = 50 * IB 20 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VBE - Base to Emitter Voltage - V 1.0 50 100 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 10000 100 50 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE f = 1.0 MHz fT - Gain Bandwidth Product - MHz 5000 2000 1000 500 200 100 50 20 10 -0.1 -0.2 VCE =10 V 6 V 2V 1V Cib - Input Capacitance - pF Cob - Output Capacitance - pF 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 Cib (I C = 0) Cob (I E = 0) -0.5 -1 -2 -5 -10 -20 IE - Emitter Current - mA -50 -100 0.5 1 2 5 10 20 50 100 VCB - Collector to Base Voltage - V VEB - Emittor to Base Voltage - V SMALL SIGNAL CURRENT GAIN vs. DC CURRENT GAIN 1000 INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 100 50 50 hre - Voltage Feedback Ratio - x10-4 hfe - Small Signal Current Gain hoe - Output Admittance - S 800 80 40 hie - Input Impedance - k VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 40 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 600 60 30 30 hoe hre hie 400 40 20 20 200 20 10 10 0 0 200 400 600 800 hFE - DC Current Gain 1000 0 0 0 200 400 600 800 hfe - Small Signal Current Gain 1000 3 2SC1623 NORMALIZED h-PARAMETER vs. COLLECTOR CURRENT 10 hie He - Normalized h - Parameter 5 hre 2 1 hfe VCE = 6.0 V f = 1.0 kHz he(IC) He = he(IC = 1.0 mA) hoe hfe 3 He - Normalized h - Parameter NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE ICE = 1.0 V f = 1.0 kHz He = he(VCE) he(VCE = 6 V) 2 hoe hre 1 hfe hie hoe hfe hie hre 0.5 hoe hre 0.2 0.1 hie 0.1 0.2 0.5 1 2 IC - Collector Current - mA 5 10 0 10 20 VCE - Collector to Emitter Voltage - V 30 4 2SC1623 [MEMO] 5 2SC1623 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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