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| SHINDENGEN General Purpose Rectifiers SMT Bridges S1ZB80 800V 0.8A FEATURES *oe Small SMT package *oe High reliability with superior *oe moisture resistance *oe Applicable to Automatic Insertion APPLICATION *oe Switching OUTLINE DIMENSIONS Case : 1Z 1Z Case : Unit : mm power supply *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 800 V IO Average Rectified Forward Current50Hz sine wave, R-load On alumina substrate 0.8 Ta=25*Z A 50Hz sine wave, R-load On glass-epoxy substrate 0.5 Ta=25*Z Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 30 Current Squared Time I2t 1ms*...t*10ms Tj=25*Z 4.5 A2 s *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit VF I =0.4A, Pulse measurement, Rating of per diode Forward Voltage F Max.1.05 V R RM Reverse Current IR V =V , Pulse measurement, Rating of per diode Max.10 EA AEjl junction to lead Max.20 Thermal Resistance AEja junction to ambient On alumina substrate Max.76 *Z/W junction to ambient On glass-epoxy substrate Max.134 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1ZBx 10 Forward Voltage Forward Current IF [A] 1 Tl=150C [TYP] Tl=25C [TYP] 0.1 Pulse measurement per diode 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] S1ZBx 3 Forward Power Dissipation Forward Power Dissipation PF [W] 2.5 SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 Average Rectified Forward Current IO [A] Tj = 150C Sine wave S1ZBx 0.7 Derating Curve Average Rectified Forward Current IO [A] 0.6 SIN 0.5 PCB Glass-epoxy substrate Soldering land 6 x 2mm Conductor layer 35m 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air S1ZBx 0.7 Derating Curve Average Rectified Forward Current IO [A] 0.6 SIN 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air Soldering land Conductor layer Substrate thickness Glass-epoxy 1mm 35m Alumina 1mm 20m 0.64mm S1ZBx 40 Peak Surge Forward Capability IFSM 35 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 30 non-repetitive, sine wave, Tj=25C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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