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DISCRETE SEMICONDUCTORS
BFG410W NPN 22 GHz wideband transistor
Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
FEATURES * Very high power gain * Low noise figure * High transition frequency * Emitter is thermal lead * Low feedback capacitance. APPLICATIONS * RF front end * Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) * Radar detectors * Pagers * Satellite television tuners (SATV) * High frequency oscillators. DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT Gmax F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum power gain noise figure Ts 110 C IC = 10 mA; VCE = 2 V; Tj = 25 C IC = 0; VCB = 2 V; f = 1 MHz open emitter open base CONDITIONS MIN. - - - - 50 -
2 Top view 1
MSB842
BFG410W
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
handbook, halfpage
3
4
Marking code: P4.
Fig.1 Simplified outline SOT343R.
TYP. - - 10 - 80 45 22 21 1.2
MAX. 10 4.5 12 54 120 - - - -
UNIT V V mA mW fF GHz dB dB
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt CAUTION -
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 750 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 110 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFG410W
MAX. 10 4.5 1 12 54 +150 150 V V V
UNIT
mA mW C C
UNIT K/W
handbook, halfpage
60
MGD960
Ptot (mW) 40
20
0 0 40 80 120 Ts (C) 160
Fig.2 Power derating curve.
1998 Mar 11
3
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Ce Cre fT Gmax S 21 F
2
BFG410W
PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum power gain; note 1 insertion power gain noise figure
CONDITIONS IC = 2.5 A; IE = 0 IC = 1 mA; IB = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 4.5 V IC = 10 mA; VCE = 2 V; see Fig.3 IE = ie = 0; VCB = 2 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5 IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8 IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8
MIN. 10 4.5 1 - 50 - - - - - -
TYP. - - - - 80 220 400 45 22 21 18 0.9 1.2 5 15
MAX. - - - 15 120 - - - - - - - - - -
UNIT V V V nA fF fF fF GHz dB dB dB dB dBm dBm
IC = 1 mA; VCE = 2 V; - f = 900 MHz; S = opt; see Fig.13 IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13 - - -
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
IC = 10 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 IC = 10 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
handbook, halfpage
120
MGG717
handbook, halfpage
100
MGG718
hFE 100
Cre (fF) 80
80
(1) (2) (3)
60
60
40 40 20
20
0 0 (1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V. 4 8 12 IC (mA) 16
0 0 1 2 3 4 5 VCB (V)
IC = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
25
MGG719
fT (GHz)
handbook, halfpage
30
MGG720
20
MSG (dB) 20
15
10 10 5
0 1 10 IC (mA)
102
0 0 4 8 12 IC (mA) 16
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
VCE = 2 V; f = 900 MHz.
Fig.5
Transition frequency as a function of collector current; typical values.
Fig.6
Maximum stable gain as a function of collector current; typical values.
1998 Mar 11
5
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
handbook, halfpage
30
MGG721
MGG722
handbook, halfpage
50
gain (dB) MSG 20 Gmax
gain (dB) 40 MSG
30 S21 20 10 10
0 0 4 8 12 IC (mA) 16
0 10
102
103
f (MHz)
104
VCE = 2 V; f = 2 GHz.
IC = 10 mA; VCE = 2 V.
Fig.7
Gain as a function of collector current; typical values.
Fig.8
Gain as a function of frequency; typical values.
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 3 GHz 1 2 40 MHz 5 0 0
0.2
5
0.2
5
-135
0.5 1
2
-45 1.0
-90 IC = 10 mA; VCE = 2 V; Zo = 50 .
MGG724
Fig.9 Common emitter input reflection coefficient (S11); typical values.
1998 Mar 11
6
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
handbook, full pagewidth
90
135
45
180 50 40
40 MHz 30 20 10
3 GHz 0
-135
-45
-90 IC = 10 mA; VCE = 2 V.
MGG725
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
handbook, full pagewidth
90
135
45
3 GHz
0.1 180
0.08
0.06
0.04
0.02 40 MHz 0
-135
-45
-90 IC = 10 mA; VCE = 2 V.
MGG726
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
1998 Mar 11
7
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 0 0
0.2
5
0.2 3 GHz
5
-135
0.5 1
2
-45 1.0
-90 IC = 10 mA; VCE = 2 V; Zo = 50 .
MGG727
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data VCE = 2 V; typical values. f (MHz) 900 1 2 4 6 8 10 12 14 2000 1 2 4 6 8 10 12 14 IC (mA) Fmin (dB) 0.8 0.9 1.1 1.3 1.5 1.7 1.9 2.1 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 mag 0.73 0.58 0.40 0.28 0.20 0.14 0.06 0.05 0.64 0.50 0.34 0.25 0.17 0.12 0.05 0.03 angle 11.2 10.1 10.1 11.0 8.0 10.5 10.1 14.2 35.7 35.8 34.4 33.7 34.5 35.8 38.0 44.8 rn () 0.56 0.43 0.33 0.30 0.30
(2)
handbook, halfpage
3
MGG723
Fmin (dB) 2
(1)
0.27 0.25 0.26 0.57 0.44 0.37 0.34 0.35 0.34 0.35 0.34
1
0 0 4 8 12 IC (mA) 16
(1) f = 2 GHz; VCE = 2 V. (2) f = 900 MHz; VCE = 2 V.
Fig.13 Minimum noise figure as a function of the collector current; typical values.
1998 Mar 11
8
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
SPICE parameters for the BFG410W die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (1) 20 22 23 24 25 26 27 28 29 30 31 32 33 34 (1) 35
(1) (1)
BFG410W
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC
VALUE 19.42 145.0 0.993 31.12 125.0 123.6 3.000 11.37 0.985 1.874 50.00 199.6 1.546 35.00 0.000 15.00 432.0 4.324 1.500 1.110 3.000 128.0 900.0 0.346 4.122 68.20 2.004 0.627 0.000 56.68 556.9 0.207 0.500 0.000 274.8 418.3 0.239 0.550 - - V
UNIT aA
SEQUENCE No. 39
(2)(3)
PARAMETER Cbp Rsb1 Rsb2
VALUE 145 25 19
UNIT fF
40 (2) 41 (3) Notes
mA fA - - - V mA aA - A m - eV - fF mV - ps - V A deg fF mV - - ns fF mV - -
1. These parameters have not been extracted, the default values are shown. 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B and E. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C and E.
handbook, halfpage
C cb
L1 B B' E' C'
L2 C
C be
Cce
MGD956
21 (1)
L3
E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14) DESIGNATION Cbe Ccb Cce L1 L2 L3 (note 1) Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 80 2 80 1.1 1.1 0.25 VALUE fF fF fF nH nH nH UNIT
36 (1) 37 (1) 38
1998 Mar 11
9
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads
BFG410W
SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1998 Mar 11
10
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG410W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Mar 11
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/04/pp12
Date of release: 1998 Mar 11
Document order number:
9397 750 03388

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