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| TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 23 1 A D G E 54 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 1GHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN J K I N M O * SUITABLE FOR BROAD BAND APPLICATIONS * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45 D 6.35 E 3.30 F 14.22 G 1.27 x 45 H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45 0.250 0.130 0.560 0.05 x 45 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 35W 65V 20V 1A -65 to 150C 200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.01/01 D2003UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.18 13 40 20:1 65 Typ. Max. Unit V 1 1 7 mA mA V S dB % -- TOTAL DEVICE h VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 12 6 0.5 pF pF pF Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 5.0C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.01/01 D2003UK 3RXW : *DLQ G% 3RXW : 9GV 9 ,GT $ I *+] 'UDLQ(IILFLHQF\ 9GV 9 ,GT $ I *+] 3LQ: 3RXW 'UDLQ(IILFLHQF\ 3RXW *DLQ 3LQ: Figure 1 Output Power and Gain vs. Input power ,0' G%F Figure 2 Output Power and Efficiency vs. Input Power OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 1000MHZ I 0+] I 0+] 9GV 9 3RXW:3(3 ,GT $ ,GT $ ZS W ZL W 1.1 - j2.5 5.1 - j17.1 Figure 3 IMD Vs. Output Power. Typical S Parameters ! Vds=28V, Idq=0.1A # MHZ S MA R 50 !Freq !MHz 70 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 mag 0.97 0.94 0.88 0.84 0.82 0.79 0.78 0.77 0.77 0.77 0.78 0.78 0.78 0.79 0.79 0.78 0.78 0.79 0.78 0.79 ang -36.4 -48.0 -65.3 -78.5 -88.4 -97.1 -105.5 -113.3 -121.8 -128.9 -136.7 -144.0 -150.8 -156.7 -160.9 -164.2 -166.3 -168.5 -170.3 -172.5 S21 mag 15.8 14.1 12.3 10.2 8.8 7.7 6.9 6.0 5.4 4.9 4.6 4.4 4.0 3.7 3.4 3.0 2.7 2.6 2.5 2.4 ang 156.6 146.3 129.9 114.7 106.0 98.3 88.5 84.5 77.8 75.3 68.3 65.4 57.2 52.3 46.7 41.4 39.5 38.4 36.8 33.0 S12 mag 0.017 0.021 0.027 0.029 0.029 0.029 0.028 0.026 0.024 0.022 0.020 0.020 0.020 0.022 0.025 0.028 0.032 0.036 0.044 0.053 ang 67.2 58.1 45.5 34.8 28.1 27.3 22.2 24.2 23.3 29.6 35.0 46.6 57.6 68.5 76.6 81.6 87.8 92.3 97.4 97.4 S22 mag 0.91 0.88 0.81 0.77 0.75 0.73 0.72 0.71 0.70 0.70 0.70 0.70 0.70 0.71 0.70 0.69 0.68 0.68 0.70 0.70 ang -23.2 -30.1 -40.3 -48.1 -54.2 -59.1 -64.3 -69.3 -75.2 -80.4 -86.5 -93.6 -99.6 -105.8 -111.3 -115.6 -117.0 -119.3 -121.0 -124.2 Prelim.01/01 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk D2003UK 10 G a te - B ia s 1K2 100nF 1nF 1K2 1K2 L1 T11 30pF T3 T4 T5 T6 D 2003U K L2 T12 T13 +28V L3 6 .8 K 10nF 100uF T2 T1 1 -1 0 p F 30pF 3 .6 p F 9 .1 p F 1 -1 0 p F T17 1 -1 0 p F 3 .6 p F 30pF 30pF T7 T8 T9 T10 D 2003U K T14 T15 T16 1000MHz TEST FIXTURE Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 T2, T17 T3, T7 T4, T8 T5, T9 T6, T10 T11,T14 T12,T15 T13,T16 L1, L2 L3 15.7 45mm 50 OHM UT 34 semi-rigid coax 7mm 15mm 7.6mm 8mm 8mm 11.2mm 7mm 6 turns 24swg enamelled copper wire, 3mm i.d. 1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.01/01 |
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