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| FJE5304D FJE5304D High Voltage High Speed Power Switch Application * * * * Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time B Equivalent Circuit C E 1 TO-126 2.Collector 3.Base 1.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) Collector Dissipation (TC=25C) Storage Temperature Value 700 400 12 4 8 2 4 30 - 65 ~ 150 Units V V V A A A A W C * Pulse Test Pulse Width = 5ms, Duty Cycle 1.0% Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 2A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IF = 2A 10 8 Min. 700 400 12 100 250 100 40 0.7 1.0 1.5 1.1 1.2 1.3 2.5 V Typ. Max. Units V V V mA mA mA VBE(sat) Base-Emitter Saturation Voltage V Vf Internal Diode Forward Voltage Drop V (c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004 FJE5304D Electrical Characteristics (Continued) TC=25C unless otherwise noted Symbol Parameter Inductive Load Switching (VCC = 200V) tstg tf Storage Time Fall Time Test Condition IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200H IC = 2A, IB1 = IB2 = 0.4A TP = 30s Min. TYP. 0.6 0.1 Max. Units s Resistive Load Switching (VCC = 250V) tstg tf Storage Time Fall Time 2.9 0.2 s * Pulse test: PW300s, Duty cycle2% Thermal Characteristics Symbol RJC RJA TC = 25C unless otherwise noted Max. 4.17 83.3 Units C/W C/W Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004 FJE5304D Typical Characteristics 5 100 IC[A], COLLECTOR CURRENT 4 hFE,DC CURRENT GAIN 3 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA Vce=5V Ta=125 C 25 C -25 C 10 o o o 2 IB = 50mA 1 0 0 1 2 3 4 5 6 7 8 IB = 0 9 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10 VCE(sat)[V],SATURATION VOLTAGE Ic=5IB 25 C O 10 1 VBE[V],SATURATION VOLTAGE Ic=5IB Ta=125 C -25 C 0.1 O O 1 -25 C 25 C Ta=125 C O O O 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG 1 tSTG, tF [ns], TIME tSTG, tF [s], TIME 100 tF 0.1 tF 0.01 0.1 1 10 10 0.1 VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time (c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004 FJE5304D Typical Characteristics (Continued) 100 TC=25 C o 100 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1s 10s 1 1ms DC 1 0.1 0.1 0.01 10 100 1000 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 50 PC[W], POWER DISSIPATION 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 9. Power Derating (c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004 FJE5304D Package Dimensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
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