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| Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.60.15 s Features q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.60.1 1.00.1 0.5 1 0.5 3 2 0.450.1 0.3 0.750.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 5 30 125 125 -55 ~ +125 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector EIAJ:SC-75 SS-Mini Type Package Marking symbol : K s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance (Ta=25C) Symbol VCBO VCEO VEBO hFE* fT Cre Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 1mA VCB = 10V, IE = -1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz min 30 20 5 70 150 230 1.3 250 MHz pF typ max Unit V V V *h FE Rank classification Rank hFE Marking Symbol B 70 ~ 160 KB C 110 ~ 250 KC 0 to 0.1 s Absolute Maximum Ratings (Ta=25C) 0.20.1 +0.1 1 Transistor PC -- Ta 150 12 Ta=25C 125 10 IB=100A 80A 8 60A 6 40A 10 2SC4655 IC -- VCE 12 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 100 Collector current IC (mA) 18 8 75 6 50 4 4 25 2 20A 2 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 60 VCE=10V 50 100 30 10 3 1 0.3 VCE(sat) -- IC IC/IB=10 300 hFE -- IC VCE=10V Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Collector current IC (mA) 40 25C 30 Ta=75C 20 -25C Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 10 50 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 600 Ta=25C 80 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V 500 2.0 400 VCB=10V 6V 200 1.6 300 1.2 0.8 100 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Cob -- VCB 1.6 12 yie=gie+jbie VCE=10V 2SC4655 bie -- gie 0 bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V f=0.45MHz 10.7 25 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25C Input susceptance bie (mS) 10 100 - 0.5 8 58 -1.0 - 0.4mA -1.5 -1mA -2mA -2.0 -4mA -2.5 58 6 25 10.7 IE=- 0.1mA -1mA -2mA -4mA -7mA f=0.45MHz 4 2 100 IE=-7mA 0 30 100 0 4 8 12 16 20 -3.0 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 Collector to base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe -- gfe 0 boe -- goe 1.2 f=0.45MHz 10.7 Forward transfer susceptance bfe (mS) - 0.4mA - 0.1mA 0.45 10.7 -1mA 25 100 100 58 -20 Output susceptance boe (mS) 100 1.0 -7mA -4mA -2mA -1mA - 0.4mA 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4 0.6 yoe=goe+jboe VCE=10V 0.8 1.0 IE=- 0.1mA -2mA 25 58 -4mA 10.7 58 25 -40 100 100 0.8 58 0.6 -60 58 IE=-7mA -80 -100 yfe=gfe+jbfe VCE=10V -120 0 20 40 60 80 100 0 Forward transfer conductance gfe (mS) Output conductance goe (mS) 3 |
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