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| 2SK3338-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 500 20 80 30 20 775 340 +150 -55 to +150 Unit V A A V A mJ W C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=3.56mH, Vcc=50V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=20A VGS=10V RGS=10 Vcc=250V ID=20A VGS=10V L=3.56 mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Min. 500 2.5 Tch=25C Tch=125C Typ. Max. Units V V A mA nA S pF 9 3.0 3.5 10 500 0.2 1.0 10 100 0.21 0.27 18 3350 5025 480 720 200 300 27 40 100 150 250 375 100 150 155 235 38 60 50 75 1.1 600 11.0 1.65 ns nC 20 A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.368 50.0 Units C/W C/W 1 2SK3338-01 Characteristics Allowable Power Dissipation PD=f(Tc) 400 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc=25C 10 300 2 t= 1s 10s D.C. PD [W] 200 ID [A] 10 1 100s 1ms 10ms 100 10 0 t D= T t T 100ms 0 0 25 50 75 100 125 150 10 -1 10 0 10 1 10 2 10 3 Tc [C] VDS [V] Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 60 15V 50 20V 10V 6.5V 100 Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C 6.0V 40 10 ID [A] 5.5V 30 20 5.0V ID[A] 1 0.1 24 10 VGS=4.5V 0 0 2 4 6 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 8 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 100 0.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C VGS=4.5V 0.5 5.0V 5.5V 6.0V 10 0.4 6.5V 10V RDS(on) [ ] gfs [S] 0.3 15V 20V 1 0.2 0.1 0.1 0.1 0.0 1 10 100 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3338-01 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V 0.8 5.0 4.5 0.7 4.0 0.6 3.5 0.5 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. VGS(th) [V] RDS(on) [ ] 3.0 2.5 2.0 typ. max. 0.4 0.3 1.5 0.2 typ. 0.1 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 min. 0.0 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25C 25 10 -7 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 20 10 -8 Vcc= 100V 250V 15 400V Ciss VGS [V] C [F] 10 -9 10 Coss Crss 10 -10 5 0 0 50 100 150 200 250 300 350 10 -11 10 -2 10 -1 10 0 10 1 10 2 Qg [C] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 100 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 10 10 3 IF [A] td(off) t [ns] tf 1 10 2 tr td(on) 1 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3338-01 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=20A 1000 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 10 0 0.5 800 Zth(ch-c) [K/W] 10 -1 0.2 0.1 0.05 0.02 600 EAV [mJ] 10 -2 0.01 0 t D= T t T 400 200 10 -5 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] 4 |
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