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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES * High Power Gain : * Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit : mm) +0.2 2.8- 0.3 0.4 +0.1 - 0.05 * Suitable for use as RF amplifier in UHF TV tuner. * Automatically Mounting : * Surface Mount Package : Embossed Type Taping 4 Pins Mini Mold (EIAJ: SC-61) 2.90.2 0.95 +0.2 1.5- 0.1 2 (1.8) Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 : RL 10 k VG1S VG2S VG1D VG2D ID PD Tch Tstg 8 (10)*1 18 18 25 200 125 V V V V mA mW C C 1.1 +0.2 - 0.1 8 (10)*1 0.85 Drain to Source Voltage VDSX 18 V 1 4 0.6 +0.1 - 0.05 5o 5o 0.8 0.4 +0.1 - 0.05 0.16 +0.1 - 0.05 5o 0 to 0.1 -55 to +125 5o PIN CONNECTIONS 1. Source 2. Drain 3. Gate2 4. Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage fields. Document No. P10566EJ2V0DS00 (2nd edition) (Previous No. TD-2398) Date Published August 1995 P Printed in Japan (c) (1.9) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 3 0.4 +0.1 - 0.05 1993 3SK134B ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure SYMBOL BVDSX IDSX VG1S(off) VG2SS(off) IG1SS IG2SS |yfs| Ciss Coss Crss Gps NF 20.0 25.0 1.5 0.6 29.0 2.5 1.1 0.02 23.0 2.4 3.5 MIN. 18 0.4 8.0 -2.0 -0.7 20 20 35.0 3.5 1.6 0.03 TYP. MAX. UNIT V mA V V nA nA mS pF pF pF dB dB VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 900 MHz VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 1 MHz TEST CONDITIONS VG1S = VG2S = -2 V, ID = 10 A VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V VDS = 10 V, VG2S = 4 V, ID = 10 A VDS = 10 V, VG1S = 4 V, ID = 10 A VDS = VG2S = 0, VG1S = 8 V VDS = VG1S = 0, VG2S = 8 V VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 1 kHz IDSX Classification Rank Marking IDSX (mA) U55/UEE U55 0.4 to 5.0 U56/UEF U56 3.0 to 8.0 2 3SK134B TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 25 Free air 300 VG2S = 4 V 20 VG1S = 1.2 V 1.1 V 15 1.0 V 0.9 V 0.8 V 5 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE PD - Total Power Dissipation - mW 200 ID - Drain Current - mA 10 100 0 25 50 75 100 125 0 5 10 15 20 TA - Ambient Temperature - C DRAIN CURRENT vs GATE1 TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE |yfs| - Forward Transfer Admittance - mS 20 VDS = 10 V 40 VG2S = 5 V 4V 3V VDS = 10 V f = 1 kHz VG2S = 5 V 4V ID - Drain Current - mA 30 3V 20 2V 10 1V 10 2V 1V 0 1.0 VG1S - Gate1 to Source Voltage - V 2.0 0 1.0 VG1S - Gate1 to Source Voltage - V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS 40 5.0 30 Ciss - Input Capacitance - pF VDS = 10 V f = 1 kHz VG2S = 4 V ID = 10 mA (at VDS = 10 V VG2S = 4 V) 4.0 f = 1 MHz 3.0 20 2.0 10 1.0 0 -1.0 0 4 8 12 16 20 0 1.0 2.0 3.0 4.0 5.0 ID - Drain Current - mA VG2S - Gate2 to Source Voltage - V 3 3SK134B OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.0 ID = 10 mA (at VDS = 10 V VG2S = 4 V) f = 1 MHz 10 20 Gps POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE Coss - Output Capacitance - pF NF - Noise Figure - dB 1.5 Gps - Power Gain - dB 10 1.0 5 0 NF ID = 10 mA (at VDS = 10 V VG2S = 4 V) f = 900 MHz 4.0 6.0 8.0 -10 0.5 -20 0 -1.0 0 1.0 2.0 3.0 4.0 0 -2.0 0 2.0 VG2S - Gate2 to Source Voltage - V VG2S - Gate2 to Source Voltage - V 900 MHz Gps AND NF TEST CIRCUIT VG2S (3 V) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF L2 L1 47 k RFC OUTPUT 50 to 10 pF 1 000 pF 1 000 pF L1, L2; 35 x 5 x 0.2 mm VG1S VDD (6 V) 4 3SK134B No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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