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| BB 419 Silicon Variable Capacitance Diode q BB 419 For VHF tuned circuit applications Type BB 419 Marking white 2 Ordering Code (tape and reel) Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current, TA 60 C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR VRM IF Top Tstg Values 28 30 20 - 55 ... + 150 Unit V mA - 55 ... + 125 C 450 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 419 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 28 V VR = 28 V, TA = 60 C Diode capacitance, f = 1 MHz VR = 3 V VR = 25 V Capacitance ratio f = 1 MHz, VR = 3 V, 25 V Capacitance matching VR = 3 V ... 25 V Series resistance f= 100 MHz, CT = 12 pF Figure of merit f = 50 MHz, VR = 3 V f= 200 MHz, VR = 25 V Symbol min. IR - - CT 26 4.3 CT3 / CT25 CT Values typ. - - - - - - 0.35 max. Unit nA 20 200 pF 32 6 6.5 3 0.5 - % - 5 - - / CT rs Q - 280 600 - Diode capacitance CT = f (VR) Semiconductor Group 2 |
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