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| PNP Silicon AF Transistors BC 856 ... BC 860 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889 Pin Configuration 1 2 3 B E C Package1) SOT-23 1)For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 856 ... BC 860 Maximum Ratings Parameter Symbol BC 856 Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Values BC 857 BC 860 45 50 50 5 100 200 200 200 330 150 Unit BC 858 BC 859 30 30 30 5 mA V VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg 65 80 80 5 mW C - 65 ... + 150 310 240 K/W 1)Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 856 ... BC 860 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-base breakdown voltage IC = 10 A BC 856 BC 857, BC 860 BC 858, BC 859 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 BC 856 BC 857, BC 860 BC 858, BC 859 Emitter-base breakdown voltage IE = 1 A Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C DC current gain IC = 10 A, VCE = 5 V BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C IC = 2 mA, VCE = 5 V BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1)Pulse Values typ. max. Unit V(BR)CE0 65 45 30 V(BR)CB0 80 50 30 V(BR)CES 80 50 30 V(BR)EB0 ICB0 - - hFE - - - 125 220 420 VCEsat - - VBEsat - - VBE(on) 600 - 650 - 750 820 700 850 - - 75 250 300 650 140 250 480 180 290 520 - - - 250 475 800 1 - 15 4 5 - - - - - - - - - - - - - - - - - - - - V nA A - mV test: t 300 s, D = 2 %. Semiconductor Group 3 BC 856 ... BC 860 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VCB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 30 Hz ... 15 kHz BC 859 BC 860 BC 859 f = 1 kHz, f = 200 Hz BC 860 Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 10 Hz ... 50 Hz BC 860 Semiconductor Group 4 Values typ. max. Unit fT Cobo Cibo h11e - - - 250 3 8 - - - MHz pF k - - - 2.7 4.5 8.7 - - - 10- 4 - - - 1.5 2.0 3.0 - - - - - - - 200 330 600 - - - S h12e h21e h22e - - - F - - - - Vn - 1.2 1.0 1.0 1.0 - 4 3 4 4 0.110 18 30 60 - - - dB V BC 856 ... BC 860 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 856 ... BC 860 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 856 ... BC 860 h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, RS = 2 k, VCE = 5 V Semiconductor Group 7 BC 856 ... BC 860 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8 |
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