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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D315
BLT71/8 UHF power transistor
Product specification Supersedes data of 1996 Feb 06 1997 Oct 14
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * High efficiency * Very high gain * Internal pre-matched input * Low supply voltage. APPLICATIONS * Hand-held radio equipment in common emitter class-AB operation for the 900 MHz communication band. DESCRIPTION
1 4
MBK187
BLT71/8
PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION
handbook, halfpage
8
5
NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1 (SO8) plastic SMD package.
Top view
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 4.8 PL (W) 1.2 Gp (dB) 11 typ. 13 C (%) 55 typ. 63
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 60 C; VCE 6.5 V; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. 8 2.5 500 2.9 +150 175 MAX. 16 V V V mA W C C UNIT
1997 Oct 14
2
Philips Semiconductors
Product specification
UHF power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.5 mA open base; IC = 10 mA open collector; IE = 0.1 mA VCE = 8 V; VBE = 0 VCE = 5 V; IC = 100 mA VCB = 4.8 V; IE = ie = 0; f = 1 MHz VCE = 4.8 V; IC = 0; f = 1 MHz 8 2.5 - 25 - - MIN. 16 - - - 0.1 - 7 5 PARAMETER thermal resistance from junction to soldering point CONDITIONS Pdis = 2.9 W; Ts = 60 C; note 1 MAX. 40
BLT71/8
UNIT K/W
MAX. V V V
UNIT
mA pF pF
handbook, halfpage
1
MBK263
handbook, halfpage
150
MLD131
IC (A)
h FE
100
(1)
50
10-1 -1 10
1
10
VCE (V)
102
0
0
200
400
600 IC (mA)
800
VCE = 4.8 V. Measured under pulse conditions: tp 300 s; 0.001. Ts = 115 C.
Fig.3 Fig.2 DC SOAR.
DC current gain as a function of collector current; typical values.
1997 Oct 14
3
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 4.8 ICQ (mA) 3 PL (W) 1.2 Gp (dB) 11 typ. 13
BLT71/8
C (%) 55 typ. 63
Ruggedness in class-AB operation The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts = 60 C.
MGD191
MGD192
handbook, halfpage
16 Gp (dB) 12
80 C Gp C (%) 60
handbook, halfpage
2.0 PL (W)
1.6
1.2 8 40 0.8 20 0.4
4
0 0 0.4 0.8 1.2
0 1.6 2.0 PL (W)
0 0 50 100 150 200 PIN (mW)
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
Fig.4
Power gain and collector efficiency as functions of load power; typical values.
Fig.5
Load power as a function of input power; typical values.
1997 Oct 14
4
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
handbook, full pagewidth
Vbias = 24 V R1
VC = 4.8 V
C16 R2 C14 L13 TR2 C13 C3 L1 C1 L2 L3 C5 L4 L11 L5 TR1 C2 C4 C6 D.U.T. BLT71/8 C7 C8 C10
MBK267
R3
L14
R4
50 input
C15 L12 L6
C9 L7 L8
C11 L9 C12 L10
50 output
Fig.6 Class-AB test circuit at f = 900 MHz.
1997 Oct 14
5
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
handbook, full pagewidth
140
80
plated througholes fixing screws
Vb C14 TR2 R1 R2 C13 C1 L1 L2 C2 C3 L3 C4 C5 L4 C6 L5 L6 C7 L11 R3 L13 L14 C15 L12 L7 C8 C16
VC
R4
C9 L8 C10
C11 C12 L10 L9
MBK266
Dimensions in mm The components are situated on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.7 Printed-circuit board and component lay-out for the 900 MHz class-AB test circuit.
1997 Oct 14
6
Philips Semiconductors
Product specification
UHF power transistor
List of components (see Figs 6 and 7). COMPONENT C1, C12, C13, C15 C2, C4, C8, C10 C3 C5 C6 C7 C9 C11 C14, C16 L1, L10 L2 L3 L4 L5 L6 L7 L8 L9 L11 DESCRIPTION multilayer ceramic chip capacitor; note 1 Giga-Trim capacitor; note 2 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 10 turns 1 mm enamelled copper wire VALUE 120 pF 0.6 to 4.5 pF 4.7 pF 5.6 pF 3.9 pF 6.8 pF 7.5 pF 5.1 pF 10 nF 50 50 50 50 50 50 50 50 50 140 nH 10 x 2.4 mm 2 x 2.4 mm 30.4 x 2.4 mm 17.4 x 2.4 mm 6.8 x 2.4 mm 8 x 2.4 mm 19 x 2.4 mm 28 x 2.4 mm 1.6 x 2.4 mm int. dia. = 4 mm; lead 1 = 2.5 mm; lead 2 = 11 mm int. dia. = 2 mm; leads = 2 x 7.5 mm DIMENSIONS
BLT71/8
CATALOGUE NO.
L12 L13, L14 R1 R2, R3, R4 TR1 TR2 Notes
2 turns 1 mm enamelled copper wire 4S2 wideband RF choke metal film resistor metal film resistor device under test NPN transistor
60 nH
4330 030 36301 1.4 k; 0.6 W 10 ; 0.6 W BLT71/8 BD139 9330 912 20112 2322 156 11402 2322 156 11009
1. American Technical Ceramics type 100A or capacitor of same quality. 2. Tekelec Giga-trim, type 37271. 3. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (r = 2.2); thickness 0.79 mm, thickness of the copper sheet 2 x 35 m.
1997 Oct 14
7
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
handbook, halfpage
12
MBK264
handbook, halfpage
10 ZL
MBK265
Zi () 8
ri
() 8 RL 6
xi 4 4 2 XL
0 800
850
900
950
f (MHz)
1000
0 800
850
900
950
f (MHz)
1000
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 C.
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 C.
Fig.8
Input impedance as a function of frequency (series components); typical values.
Fig.9
Load impedance as a function of frequency (series components); typical values.
MGD195
handbook, halfpage
16
handbook, halfpage
23.4
Gp (dB) 12
8
Zi ZL
4
0 850
Zi
900
950
f (MHz)
1000
ZL
MGD196
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 C.
Dimensions in mm.
Fig.10 Power gain as a function of frequency (series components); typical values.
Fig.11 RF test print and definition of transistor impedance.
1997 Oct 14
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
BLT71/8
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
1997 Oct 14
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT71/8
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 14
10
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLT71/8
1997 Oct 14
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp12
Date of release: 1997 Oct 14
Document order number:
9397 750 02923

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