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| TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN M I E K G * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45 D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45 Tol. 0.25 0.13 5 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45 Tol. 0.010 0.005 5 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005 * LOW NOISE * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 50 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V 20V 1A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 12/00 D2001UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 2.5W VDS = 28V f = 1GHz VDS = 28V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.1A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 1 0.18 13 40 20:1 65 Typ. Max. Unit V 1 1 7 mA A V S dB % -- 12 6 0.5 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 10C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 12/00 D2001UK 3RXW : *DLQ G% 3RXW : 3LQ: I *+] ,GT $ 9GV 9 3LQ: 'UDLQ (IILFLHQF\ I *+] ,GT $ 9GV 9 3RXW 'UDLQ(IILFLHQF\ 3RXW *DLQ Figure 1 Output Power and Gain vs. Input Power. Figure 2 Output Power and Efficiency vs. Input Power . OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 1000MHZ ZS 3.64 - j2.07 ZL 6.31 + j10.45 Typical S Parameters ! # !Freq !MHz 100 200 300 400 500 600 700 800 900 1000 Vds=28V, Idq=0.2A MHz S MA R 50 S11 mag 0.966 0.891 0.841 0.804 0.804 0.804 0.822 0.822 0.841 0.832 S21 mag 16.778 12.882 9.772 7.674 6.237 4.955 4.121 3.631 3.162 2.6 S12 mag ang 0.01479 56 0.02114 34 0.02213 20 0.01995 11 0.01641 6 0.01175 9 0.00906 41 0.01109 73 0.01718 88 0.02344 94 S22 mag 0.923 0.841 0.794 0.759 0.75 0.767 0.776 0.813 0.813 0.804 ang -47 -81 -103 -120 -134 -143 -147 -154 -162 -168 ang 144 118 99 84 69 59 54 45 36 30 ang -28 -48 -62 -73 -86 -97 -101 -107 -116 -122 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 12/00 D2001UK G a te -B ia s 10K 100nF T 2 T3 10pF 6 x 3m m c o n ta c t pad D 2001U K 22 100nF L2 6x3mm c o n ta c t pad T 4 L1 100uF +28V 3 .3 K T1 30pF 0 .8 -1 0 p F T5 1 -1 0 p F T6 30pF D2001UK 1GHz TEST FIXTURE Substrate 0.8mm PTFE/glass, Er = 2.5 All microstrip lines W = 2.4mm T1 T2, T5 T3 T4 T6 L1 L2 35 mm 15 mm 3 mm 4 mm 32 mm 7 turns 24swg enamelled copper wire, 3mm i.d. 1.5 turns 24swg enamelled copper wire on ferrite core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 12/00 |
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