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  Datasheet File OCR Text:
 SHINDENGEN
Schottky Rectifiers (SBD)
Dual
DF20SC4M
40V 20A
FEATURES
*oe SMT
OUTLINE DIMENSIONS
Case : STO-220 Unit : mm
*oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 40 V Repetitive Peak Surge ReverseRRSM V Voltage width 0.5ms, duty 1/40 Pulse 45 V IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=122*Z Average Rectified Forward Current 20 A Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value,Tj=25*Z 230 A Repetitive Peak Surge Reverse Power PRRSM Pulse width 10Es, Rating of per diode, Tj= 25*Z 330 W *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =10A, Pulse measurement, Rating of per diode F Max.0.55 V IR V=V , Pulse measurement, Rating of per diode ax.7.5 mA Reverse Current M R RM Junction Capacitance Cj f=1MHz, =10V, Rating of per diode Typ.390 pF RV Thermal Resistance AEjc junction to case Max.1.7 *Z/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
DF20SC4M
Forward Voltage
10
Forward Current IF [A]
Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
DF20SC4M
Junction Capacitance
f=1MHz Tc=25C TYP per diode
Junction Capacitance Cj [pF]
1000
100
0.1
1
10
Reverse Voltage VR [V]
DF20SC4M
1000
Reverse Current
Tc=150C [MAX]
Tc=150C [TYP] 100 Tc=125C [TYP]
Reverse Current IR [mA]
10
Tc=100C [TYP]
Tc=75C [TYP]
1
Pulse measurement per diode
0.1
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
DF20SC4M
35
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
30
DC D=0.05 0.1 0.2 0.3
25
20 0.5
15
10 SIN 5 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
DF20SC4M
20
Forward Power Dissipation
DC D=0.8
Forward Power Dissipation PF [W]
15 0.2 0.05 10 0.1 0.3
SIN
0.5
5
0
0
5
10
15
20
25
30
35
Average Rectified Forward Current IO [A]
Tj = 150C 0
IO tp D=tp /T T
DF20SC4M
40
Derating Curve
Average Rectified Forward Current IO [A]
35 DC 30 D=0.8 25 20
0.5 SIN 0.3
15 0.2 10 5 0 0.1 0.05
0
20
40
60
80
100
120
140
160
Case Temperature Tc [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
DF20SC4M
400
Peak Surge Forward Capability
IFSM
350
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
300
non-repetitive, sine wave, Tj=25C before surge current is applied
250
200
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP


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