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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6734 Issued Date : 1995.02.08 Revised Date : 2002.02.26 Page No. : 1/4 HTIP102 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP102 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25C) TO-220 * Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................ +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 80 W Total Power Dissipation (Ta=25C)................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 100 V BVCEO Collector to Emitter Voltage .............................................................................................. 100 V BVEBO Emitter to Base Voltage ....................................................................................................... 5 V IC Collector Current ........................................................................................................................... 8 A Characteristics (Ta=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 200 Typ. Max. 50 50 8 2 2.5 2.8 20 200 Unit V V uA uA mA V V V K pF Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 IC=3A, IB=6mA IC=8A, IB=80mA IC=8A, VCE=4V IC=3A, VCE=4V IC=8A, VCE=4V VCB=10V, f=0.1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Darlington Schematic C B R1 R2 E HTIP102 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 10000 VCE(sat) @ IC=500IB Spec. No. : HE6734 Issued Date : 1995.02.08 Revised Date : 2002.02.26 Page No. : 2/4 Saturation Voltage & Collector Current 10000 1000 125 C o Saturation Voltage (mV) hFE 1000 25 C 75 C o o 100 25 C o 75 C o 125 C o hFE @ VCE=4V 10 1 1 10 100 1000 10000 100 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=100IB ON Voltage & Collcetor Current 10000 Saturation Voltage (mV) ON Voltage (mV) 125 C 1000 25 C 75 C o o o 25 C 1000 125 C 75 C o o o VBE(ON) @ VCE=4V 100 100 1000 10000 100 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Switching Time & Collector Current 10 VCC=30V, IC=250IB1=-250IB2 1000 Capacitance & Reverse-Biased Voltage Switching Times (uS).. . Tstg 1 Tf Ton Capacitance (pF) 100 Cob 0.1 1 10 10 0.1 1 10 100 Collector Current (A) Reverse-Biased Voltage (V) HTIP102 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6734 Issued Date : 1995.02.08 Revised Date : 2002.02.26 Page No. : 3/4 Safe Operating Area 100000 PT=1ms PT=100ms 10000 Collector Current (mA) PT=1s 1000 100 10 1 1 10 100 Forward Voltage-VCE (V) HTIP102 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C Date Code Spec. No. : HE6734 Issued Date : 1995.02.08 Revised Date : 2002.02.26 Page No. : 4/4 H TIP 102 Control Code H I G 4 P M 3 2 1 N K Style: Pin 1.Base 2.Collector 3.Emitter O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP102 HSMC Product Specification |
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