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| PD- 91381A IRFL4105 HEXFET(R) Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045 G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -22 3 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 5.2 3.7 3.0 30 2.1 1.0 8.3 20 110 3.7 0.10 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 1/14/99 IRFL4105 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 3.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.058 --- --- --- --- --- --- --- 23 3.4 9.8 7.1 12 19 12 660 230 99 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 10V, ID = 3.7A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.9A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 35 ID = 3.7A 5.1 nC VDS = 44V 15 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 3.7A ns --- RG = 6.0 --- RD = 7.5, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 55 120 1.3 A 30 1.3 82 170 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 3.7A, VGS = 0V TJ = 25C, I F = 3.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 3.7A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C VDD = 25V, starting TJ = 25C, L = 16mH RG = 25, IAS = 3.7A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFL4105 100 TO P VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 I , D rain-to-S ou rc e C urre nt (A ) D BO TTOM I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4 .5V 4 .5 V 1 0.1 1 2 0 s P U L S E W ID T H T C = 25 C 10 100 A 1 0.1 1 20 s P U LS E W ID TH T J = 1 50 C 10 100 A V D S , D rain-to-S ource V oltage (V ) V DS , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 150oC 100 2.0 R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) I D = 3.7 A I D , D rain-to-So urce C urren t (A ) 1.5 TJ = 2 5C TJ = 1 5 0 C 10 1.0 0.5 1 4.0 4.5 5.0 5.5 V DS = 25V 2 0 s P UL S E W ID TH 6.0 6.5 7.0 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V 100 120 140 160 A V G S , G ate-to -So urce Voltag e (V) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFL4105 1200 20 1000 C iss 800 C oss 600 V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd I D = 3.7 A V D S = 24 V V D S = 15 V 16 C , Capacitance (pF) 12 8 400 C rss 200 4 0 1 10 100 A 0 0 10 20 FO R TE S T C IR C U IT S E E FIG U R E 9 30 40 A V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 I S D , Reverse D rain C urrent (A) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) 10s I D , Drain C urrent (A ) 10 100 s 10 TJ = 1 50 C T J = 25 C 1m s 1 10m s 1 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 0.1 T A = 25 C T J = 15 0C S ing le P u lse 0.1 1 10 100 A 1.6 V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFL4105 QG VDS VGS RD 10V QGS VG QGD D.U.T. + RG - VDD 10V Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Fig 10b. Switching Time Waveforms T herm al R es pon se (Z thJ A ) 100 D = 0 .5 0 0 .2 0 10 0 .1 0 0 .0 5 0 .0 2 1 0 .0 1 PD M t 0.1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 1 t2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z th J A + T A A 10000 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , R e c ta n g u la r P u lse D u ra tio n (se c ) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFL4105 300 1 5V E A S , S ingle P ulse A valanche E nergy (m J) TO P 250 B O TTO M ID 1 .7A 3 .0A 3.7 A VDS L D RIV E R 200 RG 20 V tp D .U .T IA S + - VD D A 150 0 .01 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 50 0 V D D = 25 V 25 50 75 100 125 A 150 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRFL4105 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 IRFL4105 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP B O TT O M 8 www.irf.com IRFL4105 Tape & Reel Information SOT-223 Outline 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) TR 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) 7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 ) 1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 ) 2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 ) 330.00 (13.000) M AX. 5 0.00 (1 .9 6 9 ) M IN . N O TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.72 4 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 1/99 www.irf.com 9 |
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