 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. Features: DISCRETE POWER AND SIGNAL TECHNOLOGIES * Compact surface mount package with J-bend leads (SMC). * 3.0 Watt Power Dissipation package. * 3.0 Ampere, forward voltage less than 525 mv Ordering: * 13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel. Absolute Maximum Ratings* Parameter Storage Temperature Maximum Junction Temperature TA = 25OC unless otherwise noted Value -65 to +150 -65 to +125 40 3.0 4.0 80 11 Units O O C C Repetitive Peak Reverse Voltage (VRRM) Average Rectified Forward Current (TL = 100OC) (TL = 90OC) Surge Non Repetitive Forward Current (Half wave, single phase, 60 Hz) Junction to Case for Thermal Resistance (ROJL) SMC Package (DO-214AB) V A A A O C/W *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Top Mark: B34 1 2 Electrical Characteristics SYM IR VF TA = 25OC unless otherwise noted Actual Size CHARACTERISTICS Reverse Leakage Current PW 300 us, <2% Duty Cycle Forward Voltage PW 300 us, <2% Duty Cycle MIN MAX 2.0 20 525 UNITS mA mA mV TEST CONDITIONS VR = 40 V; Tj = 25OC VR = 40 V; Tj = 100OC IF = 3.0 A; Tj = 25OC (c) 1997 Fairchild Semiconductor Corporation MBRS340 5 FORWARD CURRENT (A) 2 1 0.5 0.2 0.1 0.05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V F - FORWARD VOLTAGE (V) 0.9 1 REVERSE LEAKAGE CURRENT (mA) Forward Voltage vs Temperature Reverse Leakage Current vs Temperature 10 5 125C 1 0.1 0.01 0.001 0.0001 100C 75C 100C 25C 25C I F- R- 0 5 10 15 20 25 30 V R - REVERSE VOLTAGE (V) 35 40 Capacitance vs. Reverse Bias Voltage 120 T A = +25C CAPACITANCE (pF) 100 80 60 40 20 0 0 5 10 15 20 25 30 35 V R - REVERSE BIAS VOLTAGE (V) 40 I DISCRETE POWER AND SIGNAL TECHNOLOGIES MIN Actual Size MAX (mils) 245 280 103 320 125 8 60 12 MIN (mm) 5.59 6.60 2.00 7.75 2.92 0.10 0.76 0.15 MAX (mm) 6.22 7.11 2.62 8.13 3.18 3.18 1.52 0.31 DIM A 2 1 A (mils) 220 260 79 305 115 4 30 6 B C D E F G H B D A HC G F E SMC PACKAGE PACKAGE CODE = (MC) Fairchild Semiconductor's Criteria |
Price & Availability of MBRS340
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |