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| SI4403DY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.017 @ VGS = -4.5 V -20 0.023 @ VGS = -2.5 V 0.032 @ VGS = -1.8 V FEATURES ID (A) -9 -7 -6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch - Game Stations - Notebooks - Desktops S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -2.1 2.5 1.6 -55 to 150 -7 -30 -1.3 1.35 0.87 W _C -5.0 A Symbol VDS VGS 10 secs Steady State -20 "8 Unit V -9 -6.5 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a Surface Mounted on 1" x 1" FR4 Board. Document Number: 71683 S-04393--Rev. A, 13-Aug-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 38 71 19 Maximum 50 92 25 Unit _C/W C/W 1 SI4403DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 70_C VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -7.4 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -6.3 A VGS = -1.8 V, ID = -5.5 A Forward Transconductancea gfs VSD VDS = -15 V, ID = -7.4 A IS = -1.3 A, VGS = 0 V 20 0.014 0.018 0.024 28 -0.64 -1.1 0.017 0.023 0.032 W W S V -0.45 "100 -1 -10 V nA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.3 A, di/dt = 100 A/ms VDD = -10 V, RL = 15 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -5 V, ID = -7.4 A 30.5 5.3 3.8 30 30 110 65 45 50 50 200 110 80 ns 50 nC Notes a Pulse test; pulse width v 300 ms, duty cycle v 2%. b Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 1.5 V 12 18 12 TC = 125_C 25_C 0 0.0 -55_C 1.0 1.5 2.0 6 0-1V 0 0 2 4 6 8 6 0.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71683 S-04393--Rev. A, 13-Aug-01 2 SI4403DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.075 r DS(on) - On-Resistance ( W ) 5000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.060 4000 Ciss 0.045 3000 0.030 VGS = 1.8 V VGS = 2.5 V 2000 Coss 0.015 VGS = 4.5 V 0.000 0 6 12 18 24 30 1000 Crss 0 4 0 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 7.4 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.4 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 14 21 28 35 1.2 2 1.0 1 0.8 0 0 7 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.075 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.060 0.045 ID = 7.4 A 0.030 TJ = 25_C 0.015 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71683 S-04393--Rev. A, 13-Aug-01 www.vishay.com 3 SI4403DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 40 Single Pulse Power, Junction-to-Ambient 32 0.2 V GS(th) Variance (V) Power (W) ID = 250 mA 0.0 24 16 -0.2 8 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 71_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71683 S-04393--Rev. A, 13-Aug-01 |
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